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    MJE200 EQUIVALENT Search Results

    MJE200 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MJE200 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    MJE13005L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-Q QW-R221-027 MJE13005L

    equivalent mje13005

    Abstract: mje13005 MJE13005L
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-126 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 mje13005 MJE13005L

    MJE13005H

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-H QW-R221-024 MJE13005H

    2n2222 h parameter values

    Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-126 O-263 O-220 O-220F QW-R203-018 2n2222 h parameter values equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  1 FEATURES TO-220F TO-251 1 1 TO-263 TO-252 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 


    Original     		PDF MJE13005 O-220F O-251 O-263 O-252 O-220 O-262 QW-R203-018.

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    transistor mje13005 TO-126

    Abstract: to-126 transistor case
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 QW-R203-018. transistor mje13005 TO-126 to-126 transistor case

    equivalent mje13005

    Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220F QW-R219-001 equivalent mje13005 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 QW-R203-018.

    3904 Transistor

    Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


    Original     		PDF MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent

    mje13009 equivalent

    Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T

    BD140 application circuits circuits

    Abstract: equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original     		PDF MJE13005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BD140 application circuits circuits equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA

    BD139 fall time

    Abstract: TRANSISTOR REPLACEMENT GUIDE transistor cross reference BUS98 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,


    Original     		PDF BUS98 BUS98A BUS98A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD139 fall time TRANSISTOR REPLACEMENT GUIDE transistor cross reference 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127

    2SC103

    Abstract: MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power switching


    Original     		PDF MJE13002* MJE13003* POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC103 MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688

    mje13003 equivalent

    Abstract: MJE13003l MJE13003-x-TM3-T MJE13003 npn transistors 700V 1A switching transistor OF transistor 2N2222 to-92 2N2222 - to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L MJE13003-x-T60-K MJE13003L-x-T60-K QW-R204-004 mje13003 equivalent MJE13003l MJE13003-x-TM3-T MJE13003 npn transistors 700V 1A switching transistor OF transistor 2N2222 to-92 2N2222 - to-92

    Untitled

    Abstract: No abstract text available
    Text: ¡SAMSUNG SEM IC ON DU CTOR MJE200 INC IME 0 | 7^4142 □ 0 Q 7 b tit NPN EPITAXIAL SILICON TRANSISTOR CÒ LLECTOR-EM ITTER SU STAINING VOLTAGE LOW CO LLECTOR-EM ITTER SATURATION VOLTAGE HIGH CU RREN T GAIN-BANDW IDTH PRODUCT-MIN fT=65MHz @ lc=100m A Complementary to MJE210


    OCR Scan     		PDF MJE200 65MHz MJE210 GQG77fe

    JE210

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC M JE210 1 4£ D | 7^4142 Q 0 D 7 tclfl 3 | PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT= 65MHz @ lc = -1 0 0 m A T 0-126


    OCR Scan     		PDF JE210 65MHz MJE200 GQG77fe JE210

    free transistor equivalent book 2sc

    Abstract: short circuit protection schematic diagram 12v DC SERVO MOTOR CONTROL circuit basic circuit diagram of AC servo motor EL2037CM "Op Amp" lm 324 7429 TTL ac motor servo control circuit diagram AC Motor Servo Schematic floppy motor driver
    Text: HIGHP^rofHM MCEM W lOGM TEGRAÌHlCnCUITS General Description Features • • • • • • • • • • • • No crossover distortion Low output offset current Maximum output swing Short circuit protected Programmable park voltage Programmable transconductance


    OCR Scan     		PDF EL2037C EL2037CM MDP0027 EL2037CN MDP0008n free transistor equivalent book 2sc short circuit protection schematic diagram 12v DC SERVO MOTOR CONTROL circuit basic circuit diagram of AC servo motor "Op Amp" lm 324 7429 TTL ac motor servo control circuit diagram AC Motor Servo Schematic floppy motor driver

    basic circuit diagram of AC servo motor

    Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram
    Text: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage


    OCR Scan     		PDF EL2036C/EL2037C basic circuit diagram of AC servo motor 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram

    MJ-13330

    Abstract: J133 transistor 1n403 LC 3492 MJ13331 mj13330
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J13333 Designer's Data Sheet SW IT C H M O D E Series N PN Silicon Power Transistor 20 AMPERE NPN SILICON POW ER TRANSISTORS 4 0 0-50 0 VOLTS 175 WATTS The MJ13333 transistor Is designed for high voltage, high-speed, power switching


    OCR Scan     		PDF J13333 MJ13333 MJ-13330 J133 transistor 1n403 LC 3492 MJ13331 mj13330