MJE5742* EQUIVALENT Search Results

**MJE5742* EQUIVALENT Result Highlights (5)**

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

**MJE5742* EQUIVALENT Datasheets Context Search**

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJE5742 Abstract: 1N493 2N222 2N2905 MJE5740 MR826 Darlington transistor 2N2905 MJE5742 equivalent Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*	Original	MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 1N493 2N222 2N2905 MR826 Darlington transistor 2N2905 MJE5742 equivalent	PDF
2N2222L Abstract: 2n222 TRANSISTOR MJE5742 MR826 1N493 2N222 MJE5740 MJE5740G MJE5742G Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*	Original	MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2N2222L 2n222 TRANSISTOR MR826 1N493 2N222 MJE5740G MJE5742G	PDF
2n222 TRANSISTOR Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826 Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*	Original	MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2n222 TRANSISTOR 1N493 2N222 MJE5740G MJE5742G MR826	PDF
MJE5742 equivalent Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493 Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:	Original	MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493	PDF
2n222 TRANSISTOR Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20 Text: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:	Original	MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D 2n222 TRANSISTOR transistor 2n222 2n222 1N493 2N2905 MR826 of diode 2n222 MJE20	PDF
MJE5740 Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222 Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:	Original	MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MR826 OF 2n222	PDF
3904 Transistor Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications	Original	MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint	PDF
2n2222 npn bipolar junction Abstract: 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode Text: MOTOROLA Order this document by MJE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741 * MJE5742 * NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications	Original	MJE5740/D* MJE5740/D 2n2222 npn bipolar junction 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode	PDF
transistor 2n222 Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68 Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*	Original	MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D transistor 2n222 MJE5740 1N493 2N222 MJE5742 MR826 of diode 2n222 1K68	PDF
Untitled Abstract: No abstract text available Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*	Original	MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D	PDF
2n222 TRANSISTOR Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*	Original	MJE5740G, MJE5742G MJE5740G MJE5740 MJE5742 MJE574xG O-220AB 2n222 TRANSISTOR transistor 2n222 of diode 2n222 1N493 mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor	PDF
2n222 TRANSISTOR Abstract: ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MJE5740G MJE5742G MR826 Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*	Original	MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D 2n222 TRANSISTOR ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MR826	PDF
MJ3001 equivalent Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc	Original	MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement	PDF
motorola MJ15001 Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —	Original	MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139	PDF

2SC105 Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp	Original	2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent	PDF
All similar transistor 2sa715 Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc	Original	BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference	PDF
BU108 Abstract: 2SC1629 equivalent BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:	Original	BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100	PDF
2SA1046 Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.	Original	BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100	PDF
mje15033 replacement Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.	Original	MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100	PDF
BU108 Abstract: TIP105 Darlington transistor BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —	Original	MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100	PDF
MJ15023 EQUIVALENT Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —	Original	MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100	PDF
je5740 Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M JE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors ‘ Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications	OCR Scan	JE5740/D MJE5740 MJE5741* MJE5742* MJE5740, MJE5741 MJE5742 21A-06 O-220AB je5740	PDF
MJE5742 Abstract: 1kV NPN Darlington transistor MJE5740 power transistor mje5742 MJE5741 1N5820 221A-06 IC JRC circuits Ferroxcube core MJE5742 equivalent Text: i l MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* M JE5742* NPN Silicon Power Darlington Transistors ‘ Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications	OCR Scan	MJE5740, MJE5740 MJE5741 MJE5742 1kV NPN Darlington transistor power transistor mje5742 1N5820 221A-06 IC JRC circuits Ferroxcube core MJE5742 equivalent	PDF
je5740 Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#frr#d Dovte The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications	OCR Scan	MJE5740, JE5740 JE5741* fUE574 1-----UE574 MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57	PDF

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MJE5742* EQUIVALENT Search Results

MJE5742* EQUIVALENT Result Highlights (5)

MJE5742* EQUIVALENT Datasheets Context Search

MJE5742

2N2222L

2n222 TRANSISTOR

MJE5742 equivalent

2n222 TRANSISTOR

MJE5740

3904 Transistor

2n2222 npn bipolar junction

transistor 2n222

Untitled

2n222 TRANSISTOR

2n222 TRANSISTOR

MJ3001 equivalent

motorola MJ15001

2SC105

All similar transistor 2sa715

BU108

2SA1046

mje15033 replacement

BU108

MJ15023 EQUIVALENT

je5740

MJE5742

je5740

**MJE5742* EQUIVALENT Result Highlights (5)**

**MJE5742* EQUIVALENT Datasheets Context Search**