Untitled
Abstract: No abstract text available
Text: FZ06NIA045FH target datasheet flowNPC 0 600V/75A & 45mΩ Features flow0 housing ● Neutral-point-Clamped inverter ● Ultra fast switching ● Clip-In PCB mounting ● Low Inductance Layout ● SiC Buck diode Target Applications Schematic ● Solar inverters
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FZ06NIA045FH
00V/75A
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Untitled
Abstract: No abstract text available
Text: F106R6A030SB target datasheet flowPACK 1 600V/30A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT3 technology Target Applications Schematic ● Power Regeneration Types ● 10-F106R6A030SB-M434E08 ● 10-F106R6A030SB01-M434E18
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F106R6A030SB
00V/30A
10-F106R6A030SB-M434E08
10-F106R6A030SB01-M434E18
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency
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10-FZ06NBA110FP-M306L28
00V/110A
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Untitled
Abstract: No abstract text available
Text: F106R6A050SB target datasheet flowPACK 1 600V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT3 technology Target Applications Schematic ● Power Regeneration Types ● 10-F106R6A050SB-M435E08 ● 10-F106R6A050SB01-M435E18
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F106R6A050SB
00V/50A
10-F106R6A050SB-M435E08
10-F106R6A050SB01-M435E18
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Untitled
Abstract: No abstract text available
Text: F112R6A035SC target datasheet flowPACK 1 1200V/35A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A035SC-M439E08 ● 10-F112R6A035SC01-M439E18
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F112R6A035SC
200V/35A
10-F112R6A035SC-M439E08
10-F112R6A035SC01-M439E18
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Untitled
Abstract: No abstract text available
Text: F112R6A050SC target datasheet flowPACK 1 1200V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A050SC-M430E08 ● 10-F112R6A050SC01-M430E18
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F112R6A050SC
200V/50A
10-F112R6A050SC-M430E08
10-F112R6A050SC01-M430E18
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Untitled
Abstract: No abstract text available
Text: F206R6A075SB target datasheet flowPACK 2 600V/75A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT3 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F206R6A075SB-M443E
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F206R6A075SB
00V/75A
30-F206R6A075SB-M443E
30-F206R6A075SB01-M443E10
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Untitled
Abstract: No abstract text available
Text: F206R6A050SB target datasheet flowPACK 2 600V/50A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT3 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F206R6A050SB-M442E
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F206R6A050SB
00V/50A
30-F206R6A050SB-M442E
30-F206R6A050SB01-M442E10
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Untitled
Abstract: No abstract text available
Text: F112R6A015SC target datasheet flowPACK 1 1200V/15A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A015SC-M438E08 ● 10-F112R6A015SC01-M438E18
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F112R6A015SC
200V/15A
10-F112R6A015SC-M438E08
10-F112R6A015SC01-M438E18
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Untitled
Abstract: No abstract text available
Text: F206R6A100SB target datasheet flowPACK 2 600V/100A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT3 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F206R6A100SB-M444E
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F206R6A100SB
00V/100A
30-F206R6A100SB-M444E
30-F206R6A100SB01-M444E10
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Untitled
Abstract: No abstract text available
Text: F206R6A150SB target datasheet flowPACK 2 600V/150A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT3 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F206R6A150SB-M445E
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F206R6A150SB
00V/150A
30-F206R6A150SB-M445E
30-F206R6A150SB01-M445E10
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Untitled
Abstract: No abstract text available
Text: F212R6A150SC target datasheet flowPACK 2 1200V/150A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT4 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F212R6A150SC-M440E
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F212R6A150SC
200V/150A
30-F212R6A150SC-M440E
30-F212R6A150SC01-M440E10
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet flowNPC 0 600V/75A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability
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10-FZ06NRA084FP02-P969F68
10-PZ06NRA084FP02-P969F68Y
00V/75A
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NRA069FP02-P967F68 10-PZ06NRA069FP02-P967F68Y target datasheet flowNPC 0 600V/60A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability
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10-FZ06NRA069FP02-P967F68
10-PZ06NRA069FP02-P967F68Y
00V/60A
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Untitled
Abstract: No abstract text available
Text: 70-W612A3C600SH01-M600F10 target datasheet flowMNPC 4w 1200V/600A Features flowMNPC 4w housing ● High Efficient Advanced Paralleled NPC Topology ● Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses ● High Power Screw Interface
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70-W612A3C600SH01-M600F10
200V/600A
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BRX08
Abstract: CAP11 sensor "Humidity Sensor" Mk 33 multi channel proximity sensor ic JESD22-A114 JESD78 multi-touch controller capacitive dmk26 DMK31
Text: SX8663 Capacitive Button Matrix up to 36 and Proximity Controller with Individual LED Drivers and Buzzer Output ADVANCED COMMUNICATIONS & SENSING GENERAL DESCRIPTION KEY PRODUCT FEATURES The SX8663 is an ultra low power, fully integrated 12-channel solution for capacitive touch-button
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SX8663
SX8663
12-channel
BRX08
CAP11 sensor
"Humidity Sensor" Mk 33
multi channel proximity sensor ic
JESD22-A114
JESD78
multi-touch controller capacitive
dmk26
DMK31
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Untitled
Abstract: No abstract text available
Text: FZ06NPA045FP preliminary datasheet flowNPC 0 600V/50A & 45A PS* Features flow0 12mm housing ● *PS: 45A parallel switch 40A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● SiC buck diode ● low inductance layout Target Applications
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FZ06NPA045FP
00V/50A
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Untitled
Abstract: No abstract text available
Text: V23990-P690-G12-PM target datasheet flowCON 2 1200V/150A Features Flow 2 housing ● Input rectifier with brake ● With flowPACK 2 up to 30 kW inverters ● Press-fir pins for easy assembly Target Applications Schematic ● Motor Drive ● Power Generation
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V23990-P690-G12-PM
200V/150A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-F73-PM
200V/40A
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15JC10
Abstract: SF15JC10
Text: Schottky Barrier Diode Twin Diode OUTLINE S F 15J C 10 100 V 15 A Feature • T j= 1 5 0 “C • Tj=150°C • y jis t-ib K • Full M olded • lR = 0 .6 m A • Low lR =0 .6 m A • Resistance for thermal run-away •« » W Œ 2 k V S S I • Dielectric Strength 2kV
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SF15JC10
15JC10
SF15JC10
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is1555
Abstract: silicon diode 151555 IS1553 1S1555 1s1555 diode silicon diode 1S1555 1S1553-1S1555 1S1553 MARKING toshiba 133 1S1554
Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DE-! TO^ESO OOCHEn? 3 | D I S C R E T E / O P T O _ ^ 67C 09297 D. / - Silicon Epitaxial "Planar Type 1S1553—1S1555 Diode Unit in min GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES :
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1S1553-1S1555
1S1553
1S1554
1S1555
DO-35
SC-40
100mA
is1555
silicon diode 151555
IS1553
1S1555
1s1555 diode
silicon diode 1S1555
1S1553-1S1555
1S1553
MARKING toshiba 133
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1s1555 diode
Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Text: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:
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1S1553-1S1555
1S1553
1S1554
1S1555
100mA
1s1555 diode
silicon diode 151555
silicon diode 1S1555
1s1554 diode
1S1553/1S1555
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marking JC diode
Abstract: SG20JC6M diode ir01
Text: Schottky Barrier Diode Twin Diode OUTLINE SG20JC6M 60V 20A Feature • T j= i5 r c • Tj=150°C • T7JIÆ-JI/ K • Full M olded • lR = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away •« » W Œ 2 k V S S I • Dielectric Strength 2kV
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SG20JC6M
FT0220G
CJ533-1
marking JC diode
SG20JC6M
diode ir01
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