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    ML303B Search Results

    ML303B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ML303B Micro Electronics PIN PHOTO DIODE Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: m MÊÊk PV ML303B MICRO •= DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.


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    PDF ML303B ML303B 150mW ML3038

    H-90

    Abstract: ML303B
    Text: ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. R2.5 0.1 5.0(0.2 It feaxires high sensitivity 3.0 (0.13) 0.6(0.024) x45° « . 5(0.06) and small junction capacitance make it possible


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    PDF ML303B 100mA 150mW H-90

    Untitled

    Abstract: No abstract text available
    Text: CRO ML303B PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It fea:ures high sensitivity and small junction capacitance make it possible to operate at high frequency application.


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    PDF ML303B ML303B Oct-98

    L303A

    Abstract: DL78 L 31A MA1515 EL79D
    Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a


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    PDF ML303 ML303B ML308 ML308A L-303a -308C MEL78 MEL78D MEL79 EL79D L303A DL78 L 31A MA1515

    ML3038

    Abstract: ML303B
    Text: MICRO PIN PHOTO DIODE DESCRIPTION ML303B is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It feaxires high sensitivity and small junction capacitance make it possible to operate at high frequency application.


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    PDF ML303B 100mA ML3038

    BOX69477

    Abstract: MIB57T-J ML303B
    Text: MIB57T-J INFRARED EMITTING DIODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.


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    PDF MIB57T-J MEB57T-J ML303B. 10\iS, BOX69477, 100mA 175mW BOX69477 ML303B

    BOX69477

    Abstract: ML303B 100mA-1A
    Text: CRO MIB57T-J INFRARED EM ITTIN G D IODE DESCRIPTION MEB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point.


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    PDF MEB57T-J M1B57T-J ML303B. BOX69477, 100mA 175mW BOX69477 ML303B 100mA-1A