2N4258

Abstract: 2N4257 2N4258/A MM4257 2N2369 MM4258 MA661
Contextual Info: MM4257 SILICON MM4258 PNP SILICO N ANN U LA R . . . designed fo r low voltages. applications TRANSISTORS requiring high speed switching at PNP S IL IC O N • C ollector-E m itter Saturation Voltage — • Switching T im e s l c = 10 m Adc - V c E (s a t) - 0 .1 5 V d c (M ax) @ lc - 10 m Adc

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

Contextual Info: MOTOROLA SC TXSTRS/R 6367254 FJ Tb MOTOROLA SC CXSTRS/R DE I L 3 L 7 5 S 4 D0fla3fe.7 96D F 82367 D T - ? 7 ' MM4257 MM4258 C A SE 22-03, STYLE 1 TO-18 TO-206AA) MAXIMUM RATINGS Rating Symbol MM4257 MM4258 Unit Collector-Emitter Voltage VCEO 6.0 12 Collector-Base Voltage

MMS204

Abstract: 5204 eprom MM5204Q IMP-16 power saver circuits MM5204D programming m5204 description of power saver block diagram D24C
Contextual Info: MOS EPROMs MM4204/MM5204 4096-Bit 512 x 8 UV Erasable PROM General Description The M M 4204/M M 5204 is 4 096-bit static read only m em ory w hich is e le ctrica lly program mable and uses silicon gate technology to achieve bip o lar c o m p a tib ility .

mm4208a

Abstract: MM4028A MM4208 MM4209 MM4209A MM4028
Contextual Info: MM4208, MM4208A SILICON MM4209, MM4209A PNP SILICON SWITCHING TRANSISTORS PNR SILICON ANNULAR TRANSISTORS . . . designed fo r applications requiring very high-speed switching at low voltage fo r com puter logic circuits. Fast Switching Tim es - @ l c * 5 0 m Adc

mm5213

Abstract: MM5231 MM4203Q MM5203Q MM5203 MM523 J24CQ TTL dm7400
Contextual Info: MM4203/MM5203 MOS EPROMs National Semiconductor MM4203/MM5203 2048-Bit 256 x 8 or 512 x 4 UV Erasable PROM General Description The M M 420 3 /M M 5 2 03 is a 204 8 -b it static read­ o n ly m em ory w hich is e lectrically programmable and uses silicon gate technology to achieve bipolar

MM4208

Abstract: MM4208A MM4209 MM4209A
Contextual Info: MM4208, MM4208A SILICON MM4209, MM4209A PNR SILICON A N N U LA R PNP SILICON SWITCHING TRANSISTORS TRANSISTORS . . . designed for applications requiring very high-speed switching at low voltage for computer logic circuits. Fast Switching Times - @ lc * 50 m Adc

5204 eprom

Abstract: mm5204 MM5204Q MM5204D D24C MM4204D IMP-16 IMP-16P
Contextual Info: MM4204/MM5204 4096-Bit 512 x 8 UV Erasable PROM MM4204/M M5204 MOS EPROMs 2 2 National Semiconductor General Description Static operation-^no clock required The MM4204/MM5204 is a^4Q96-bit static read only memory which is electrically programmable and uses

MM4209

Abstract: MM4028A MM4208 MM4208A MM4209A MSD6100
Contextual Info: MM4208, MM4028A, MM4209, MM4209A continued E L E C T R IC A L C H A R A C T E R IS T IC S <TA = 25 °C unless otherwise noted) _ . . Ch*ract*ri*tic . - Symbol Min Typ Max Unit OFF C H A R A C TER ISTIC S Co'lsctof.Emitter Breakdown V o ltage^ I dC • 3.0 mAdc, lg • 0

MM5262N

Abstract: MM5262 MM5262D mm4262 M5262 5262n
Contextual Info: M M 4262/M M 5262 MOS RAMs NATIONAL M M 4262/M M 5262 2048-bit fully decoded dynamic random access read/write memory general description MM4262 L o w power O perating Stand b y T h e M M 4262/M M 5262 is a fu lly decoded 2048 w ord by 1 b it d yn am ic read/w rite random access

MM4280

Contextual Info: NMOSRAMs MM4280 4096-Bit 4096 x 1 Extended Temperature Range Dynamic RAM General Description N ational's M M 4 2 8 0 is a 4 0 9 6 w ord b y 1 b it dynam ic T h e single device cell, along w ith unique design features in the on-chip peripheral circuits, yields a high perfo r­

3066B

Abstract: MM4261 lambda IC 101 MM4261H 3036D TO72 package
Contextual Info: MM4261H silicon High Reliability Products PNP SILICO N SW ITCHING T R A N SISTO R PNP S ILIC O N A N N U LA R TR A N S IS TO R . . . designed fo r high re lia b ility , low -level sw itc h in g a p p lica tio n s and general usage fo r ra d ia tio n re sista n t re q u irem en ts.

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

B84299-K56

Abstract: k55 transistor B84299-K53 B84299-K55
Contextual Info: 4-Line Filters B84299-K53 for Installations and Systems … B84299-K56 Power line filters for three-phase systems Rated voltage 440/250 V~, 50/60 Hz Rated current 6 to 25 A Construction • Four-line filter ■ Plastic case Features ■ High insertion loss

2N2222A JANTX

Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

S7-200 cpu 224

Abstract: s7 200 cpu 224 siemens S7-200 cpu 224xp Example SIMATIC S7 Programming PID function block PLC siemens S7-200 cpu 226 6ES7 298-8GA00-8XH0 TD400C 231 7PB22 0XA0 214-1BD23-0XB0 S7-200 cpu 224xp
Contextual Info: Preface, Contents SIMATIC S7-200 Programmable Controller System Manual Product Overview 1 Getting Started 2 Installing the S7-200 3 PLC Concepts 4 Programming Concepts, Conventions and Features 5 S7-200 Instruction Set 6 Communicating over a Network 7 Hardware Troubleshooting Guide

Contextual Info: o o o o o in oo oo o o V- CM 1 1 1 1 1 o o m o o in in cm in in C O r- r in in in o o co co co in r- COCOCOCMO t- r*. I i i i i i 1 1 1 1 ! o o o o o in in in in in o o o O 1 m in in o 1 C/D CO . OO 'S" a a UJ LH I I I I I o o o o I in o in o I 1 o o o o o

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­