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    MMBD352 Price and Stock

    onsemi MMBD352WT1G

    RF DIODE SCHOTTKY 7V 200MW SC70
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    DigiKey MMBD352WT1G Cut Tape 81,160 1
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    MMBD352WT1G Digi-Reel 81,160 1
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    MMBD352WT1G Reel 78,000 3,000
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    Mouser Electronics MMBD352WT1G 6,739
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    Newark MMBD352WT1G Cut Tape 19,250 5
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    MMBD352WT1G Reel 6,000
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    Bristol Electronics MMBD352WT1G 660 27
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    Quest Components MMBD352WT1G 557
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    MMBD352WT1G 528
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    onsemi MMBD352LT1G

    DIODE SCHOTTKY 7V 225MW SOT23-3
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    DigiKey MMBD352LT1G Digi-Reel 6,685 1
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    MMBD352LT1G Cut Tape 6,685 1
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    MMBD352LT1G Reel 6,000 3,000
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    Avnet Americas MMBD352LT1G Reel 18,000 10 Weeks 3,000
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    Mouser Electronics MMBD352LT1G 66,242
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    Newark MMBD352LT1G Cut Tape 6,598 5
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    MMBD352LT1G Reel 3,000
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    Onlinecomponents.com MMBD352LT1G 15,000
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    Bristol Electronics MMBD352LT1G 4,934
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    MMBD352LT1G 2,123
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    Quest Components MMBD352LT1G 3,947
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    MMBD352LT1G 1,694
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    Avnet Silica MMBD352LT1G 11 Weeks 3,000
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    Chip One Stop MMBD352LT1G Cut Tape 8,520
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    EBV Elektronik MMBD352LT1G 6,000 12 Weeks 3,000
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    Master Electronics MMBD352LT1G 15,000
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    New Advantage Corporation MMBD352LT1G 6,000 1
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    Win Source Electronics MMBD352LT1G 42,030
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    Wuhan P&S MMBD352LT1G 323 1
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    onsemi NSVMMBD352WT1G

    DIODE ARRAY SCHOTTKY 7V SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSVMMBD352WT1G Digi-Reel 2,730 1
    • 1 $0.53
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    NSVMMBD352WT1G Cut Tape 2,730 1
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    NSVMMBD352WT1G Reel 3,000
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    Avnet Americas NSVMMBD352WT1G Reel 8 Weeks 9,000
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    Mouser Electronics NSVMMBD352WT1G 2,393
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    Newark NSVMMBD352WT1G Reel 3,000
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    Avnet Silica NSVMMBD352WT1G 9 Weeks 3,000
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    EBV Elektronik NSVMMBD352WT1G 10 Weeks 3,000
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    onsemi MMBD352LT1

    DIODE SWITCH DUAL 7V SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD352LT1 Reel
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    MMBD352LT1 Cut Tape
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    Bristol Electronics MMBD352LT1 27,000
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    MMBD352LT1 10,413
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    MMBD352LT1 2,988
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    Quest Components MMBD352LT1 21,600
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    MMBD352LT1 8,136
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    MMBD352LT1 7,200
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    MMBD352LT1 2,390
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    MMBD352LT1 1,044
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    Rochester Electronics MMBD352LT1 57,574 1
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    Win Source Electronics MMBD352LT1 41,000
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    Rochester Electronics LLC MMBD352LT1

    DIODE SWITCH DUAL 7V SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD352LT1 Bulk 1,567
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    MMBD352 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBD352 Leshan Radio Company Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352 On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352 PanJit Semiconductors SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE Original PDF
    MMBD352 Motorola European Master Selection Guide 1986 Scan PDF
    MMBD352L On Semiconductor Dual Hot Carrier Mixer Diode Original PDF
    MMBD352LT1 Leshan Radio Company Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352LT1 On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352LT1 On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352LT1 On Semiconductor Dual Hot Carrier Mixer Diode Original PDF
    MMBD352LT1 On Semiconductor Dual Hot Carrier Mixer Diode Original PDF
    MMBD352LT1-D On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352LT1G On Semiconductor Small Signal SOT23 Schottky, Dual Series Original PDF
    MMBD352LT1G On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352LT3 On Semiconductor Small Signal SOT23 Schottky, Dual Series Original PDF
    MMBD352LT3 On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD352LT3G On Semiconductor Small Signal SOT23 Schottky, Dual Series Original PDF
    MMBD352W On Semiconductor Dual Schottky Barrier Diode Original PDF
    MMBD352W PanJit Semiconductors SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE Original PDF
    MMBD352WT1 Leshan Radio Company Dual Schottky Barrier Diode Original PDF
    MMBD352WT1 Motorola Silicon Diode Original PDF

    MMBD352 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original
    MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV PDF

    MMBD352

    Abstract: No abstract text available
    Text: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 7.0 Volts POWER 250mWatts SOT-23 Unit:inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA


    Original
    MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 250mWatts OT-23 OT-23 MIL-STD-750 008gramV MMBD352 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications


    Original
    MMBD352 OT-23, MIL-STD-202, PDF

    M6H MARKING sot23

    Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1
    Text: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236 CASE 318 2 Features


    Original
    MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 OT-23 O-236) MMBD352LT1 MMBD353LT1 MMBD354LT1 M6H MARKING sot23 MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original
    MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV RB500V-40 MMBD101W PDF

    TO-236AB

    Abstract: SOT23 marking m5g DIODE M5G
    Text: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) MMBD352LT1/D TO-236AB SOT23 marking m5g DIODE M5G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Schottky Barrier Diode MMBD352WT1 3 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 MMBD352WT1 PDF

    MMBD352WT1

    Abstract: SMD310
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 r14525 MMBD352WT1/D MMBD352WT1 SMD310 PDF

    MMBD352WT1

    Abstract: No abstract text available
    Text: ON Semiconductort Dual SCHOTTKY Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 r14525 MMBD352WT1/D MMBD352WT1 PDF

    DIODE M5G

    Abstract: 355 sot-23 diode marking 355 SOT23 marking M6H SOT-23 MMBD352 sot-23 marking code pd M6H MARKING sot23 SOT23 marking m5g sot23 marking tj sot-23 MARKING CODE 70
    Text: MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power dissipation Pd=300mW — Pb/RoHS Free Applications — Designed primarily for UHF mixer applications. MMBD352


    Original
    MMBD352-355 OT-23 300mW MMBD352 MMBD353 MMBD354 MMBD355 MMBD352 MMBD353 MMBD354 DIODE M5G 355 sot-23 diode marking 355 SOT23 marking M6H SOT-23 sot-23 marking code pd M6H MARKING sot23 SOT23 marking m5g sot23 marking tj sot-23 MARKING CODE 70 PDF

    AE sot-23

    Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
    Text: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352LT1/D MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) AE sot-23 SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23 PDF

    MMBD352WT1G

    Abstract: No abstract text available
    Text: MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. Features http://onsemi.com • Very Low Capacitance - Less Than 1.0 pF @ 0 V


    Original
    MMBD352WT1G OT-323 SC-70) MMBD352WT1/D MMBD352WT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7 Volt 250 mWatt POWER 0.006 0.15 MIN. FEATURES 0.120(3.04) 0.110(2.80) • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA


    Original
    MMBD101/MMBD352/MMBD354/MMBD355 2011/65/EU IEC61249 OT-23 MIL-STD-750 2014-REV PDF

    MMBD352LT1

    Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 MMBD353LT3G
    Text: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236


    Original
    MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 OT-23 O-236) MMBD352LT1 MMBD352LT1/D MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 MMBD353LT3G PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 MMBD352WT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD352WT1G, MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features •     Very Low Capacitance − Less Than 1.0 pF @ 0 V


    Original
    MMBD352WT1G, NSVMMBD352WT1G MMBD352WT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching


    Original
    MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G MMBD352LT1G MMBD352LT1/D PDF

    M6H MARKING sot23

    Abstract: DIODE M5G MMBD355LT1G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e
    Text: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching


    Original
    MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G OT-23 O-236) MMBD352LT1G MMBD352LT1/D M6H MARKING sot23 DIODE M5G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original
    MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original
    MMBD101/MMBD352/MMBD354/MMBD355 2002/95/EC IEC61249 OT-23, MIL-STD-750, MMBD101 MMBD352 MMBD354 MMBD355 2012-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original
    MMBD352WT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ual Sch o ttk y Barrier Diode MMBD352W T1 These devices are designed primarily for U H F mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — L ess Than 1.0 pF @ Zero Volts


    OCR Scan
    MMBD352W MMBD352WT1 OT-323 MMBD352WT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    OCR Scan
    MMBD352LT1/D MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 OT-23 O-236AB) b3ti72SS PDF

    353-L

    Abstract: CASE318-07 MMBD352L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B D 352L M M B D 353L D ual H ot C arrier M ix e r Diodes DUAL HOT CARRIER MIXER DIODES MMBD352L STYLE 11 MMBD353L {STYLE 9) ANODE CATHODE 1 2 CATHODE ANODE \ 1 o— M— •— M— o 2 o—H— t— 4— o 3 CATHODE ANODE


    OCR Scan
    MMBD352L MMBD353L OT-23 O-236AB) D352L MMBD353L 353-L CASE318-07 MMBD352L PDF