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    MMBR901 Search Results

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    MMBR901 Price and Stock

    Motorola Semiconductor Products MMBR901LT1

    Bipolar Junction Transistor, NPN Type, SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MMBR901LT1 49,988
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $0.15
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    MMBR901LT1 5,012
    • 1 $1.2645
    • 10 $1.2645
    • 100 $1.2645
    • 1000 $1.2645
    • 10000 $0.3794
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    MMBR901LT1 3,261
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $0.875
    • 10000 $0.75
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    MMBR901LT1 2,802
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.3
    • 10000 $0.2625
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    MMBR901LT1 832
    • 1 $0.75
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.225
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    MMBR901LT1 5
    • 1 $0.3
    • 10 $0.3
    • 100 $0.3
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    onsemi MMBR901LT1

    Bipolar Junction Transistor, NPN Type, SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MMBR901LT1 22,332
    • 1 $1.2645
    • 10 $1.2645
    • 100 $1.2645
    • 1000 $1.2645
    • 10000 $0.3794
    Buy Now
    NexGen Digital MMBR901LT1 31
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    Motorola Semiconductor Products MMBR901

    MOT MMBR901 UNINSPECTED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ES Components MMBR901 748
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    MMBR901 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBR901 Micro Commercial Components High-Frequency Transistor NPN Silicon Original PDF
    MMBR901 Motorola European Master Selection Guide 1986 Scan PDF
    MMBR901 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MMBR901 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MMBR901 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MMBR901LT1 Motorola IC = 30 mA SURFACE MOUNTED HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF
    MMBR901LT3 Motorola IC = 30 mA SURFACE MOUNTED HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF
    MMBR901MLT1 Advanced Power Technology RF & MICROWAVE TRANSISTOR Original PDF

    MMBR901 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR901L Silicon NPN RF Transistor DESCRIPTION • Low Noise • High Power Gain- SOT- 2 3 package G p e = 1 2 . 0 d B T Y P . @ f = 1 GHz &" ^^


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    PDF MMBR901L

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products


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    PDF MMBR901

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)


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    PDF MMBR901 10Vdc,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBR901LT1,T3 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM :


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    PDF OT-23 MMBR901LT1ï 037TPY 950TPY 550REF 022REF

    mps901

    Abstract: MRF901
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1,

    MMBR901L

    Abstract: motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MMBR901L motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT

    Untitled

    Abstract: No abstract text available
    Text: MMBR901 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15


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    PDF MMBR901

    Untitled

    Abstract: No abstract text available
    Text: MMBR901LT3 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m# Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15


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    PDF MMBR901LT3

    MMBR901

    Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
    Text: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143


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    PDF MMBR901MLT1/MRF9011MLT1 MMBR901LT1/MRF9011LT1 OT23/SOT143 MMBR901 MRF9011LT1 MRF9011MLT1 MMBR901MLT1

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MMBR901LT1/D MMBR901LT1

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF matched =1.9dB (Typ)


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    PDF MMBR901 10Vdc,

    MMBR901

    Abstract: No abstract text available
    Text: MCC Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)


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    PDF MMBR901 10Vdc, MMBR901

    11608A

    Abstract: MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MRF9011LT1 MRF9011LT1) 11608A MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d

    Untitled

    Abstract: No abstract text available
    Text: MMBR901LT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)-55þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15


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    PDF MMBR901LT1

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    TOKO rlc variable INDUCTANCE

    Abstract: MPS901 J340 751E MC13156 MC13156DW MC13156FB MMBR5179 SFE10 HP8640B
    Text: Order this document by MC13156/D MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar


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    PDF MC13156/D MC13156 MC13156 TOKO rlc variable INDUCTANCE MPS901 J340 751E MC13156DW MC13156FB MMBR5179 SFE10 HP8640B

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D OT-23 MMBR901LT1

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1, MRF9011LT1 MRF9011LT1) OT-23 OT-143 MRF9011LT1 MMBR901LT1

    MMBR2857

    Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)


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    PDF OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1

    MPS536

    Abstract: MMBR901L
    Text: MMBR536L See MPS536 MMBR571L (See MPS571) MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR901L The RF Line Die S ource Same as MRF901 N P N S ilic o n H igh Frequency T ra n sisto r . . . designed p rim a rily fo r use in h ig h -g ain , low -n oise , sm a ll-sign a l UHF and


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    PDF MMBR536L MPS536) MMBR571L MPS571) MMBR901L MRF901 MPS536 MMBR901L

    mmbr901lt1

    Abstract: 75 watt npn switching transistor MARKING 7A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF OT-23 MMBR901LT1, mmbr901lt1 75 watt npn switching transistor MARKING 7A sot-23

    MMBR901

    Abstract: transistor 2248
    Text: 1EE 0 § k 3 ti7 2 5 4 MOTOROLA SC □Dä7E7 3 T | X S TR S /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR901 The RF Line Dfe Source Same as MRF9Q1 NPN Silicon High Frequency Transistors , . . designee primarily for use in high-gain, iow-noise, small-signal UHF and


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    PDF MMBR901 MMBR901 transistor 2248