Contextual Info: MMBR951ALT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)322# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10

MRF951

Contextual Info: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features

MMBR951L

Contextual Info: 4fc>E V MOTOROLA SC X S T R S / R F m MOTOROLA SEM IC O N D U C T O R b 3 b 7 2 5 4 OQ'iMESl 7 • PlOTb MMBR941L (See MRF941) MMBR951L (See MRF951) TECHNICAL DATA MMBR2060L The RF Line N P N S ilic o n H ig h Frequency T ra n sisto r . designed primarily for use in high-gain, low-noise amplifier, oscillator

Contextual Info: MMBR951 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

MRF951

Contextual Info: MOTOROLA Order this document by MMBR951ALT1/D SEMICONDUCTOR TECHNICAL DATA MMBR951 The RF Line NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: MMBR951MLT1/MRF9511MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES ! Low cost SOT23/SOT143 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Parameter Collector-Base Voltage

MMBR951L

Contextual Info: ^£,mi-Condactoi ^Pi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR951L Silicon NPN RF Transistor _ DESCRIPTION SOT- 2 3 package • Low Noise • High Current-Gain Bandwidth Product

Contextual Info: MMBR951ALT3 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)322# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10

motorola 7673 A

Abstract: MMBR951 MRF957 sot-23 marking 7z MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 25SEP01
Contextual Info: The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MMBR2060

Abstract: mixer adc mhz MRF951
Contextual Info: MMBR941L See MRF941 MMBR951L (See MRF951) MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR2060L The RF Line NPIM Silicon High Frequency Transistor . . . designed prim arily for use in high-gain, low-noise amplifier, oscillator and mixer applications. Packaged for thick or thin-film circuits using surface

MRF9511ALT1

Abstract: MMBR951LT1G MRF9511A k091 motorola 7673 A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n Low N o ise, H ig h -F re q u e n c y Tran sisto rs D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll- s ig n a l a m p lifie r s . T h is s e r ie s MMBR951 MRF951 M RF957 M R F9511

motorola 7673 A

Abstract: MRF957 MMBR951 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: MMBR9511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

Contextual Info: MMBR951LT3 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)322# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

F9 SOT23

Abstract: BFG425W IC vco 900 1800 mhz BGA2022 2.45 Ghz power amplifier sot343r BFG480W BFG410W PBR951 PMBTH10
Contextual Info: P H I L I P S R F W I D E B A N D T R A N S I S TO R S A N D M M I C S F O R W I R E L E S S Preferred types recommended for new design. Fo r a c o m p l e t e ove r v i ew o f o u r p o r t f o l i o s e e o u r w e b s i t e w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m / p ro d u c t s / r f /

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに