MMBT2907A MMBT2907
Abstract: No abstract text available
Text: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2012-01-11 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse
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MMBT2907
MMBT2907A
MMBT2907A
OT-23
O-236)
UL94V-0
di200
MMBT2907A MMBT2907
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MMBT2907A-2F
Abstract: transistor 2F to-236 Application of MMBT2907A MMBT2907 ON MMBT2907 MMBT2222 MMBT2222A MMBT2907A mmbt2907 2f MMBT2907 die
Text: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse
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MMBT2907
MMBT2907A
OT-23
O-236)
UL94V-0
MMBT2907
MMBT2222
MMBT2907A-2F
transistor 2F to-236
Application of MMBT2907A
MMBT2907 ON
MMBT2222A
MMBT2907A
mmbt2907 2f
MMBT2907 die
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Untitled
Abstract: No abstract text available
Text: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse
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MMBT2907
MMBT2907A
OT-23
O-236)
UL94V-0
MMBT2907
MMBT2222
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pn2907
Abstract: No abstract text available
Text: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information
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PN2907
MMBT2907
PN2907
OT-23
PN2907BU
MMBT2907
OT-23
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MMBT2907
Abstract: MMBT2222 MMBT2222A MMBT2907A
Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
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MMBT2907
MMBT2907A
MMBT2222
MMBT2222A
OT-23
MMBT2907
MMBT2907A
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MMBT2907
Abstract: MMBT2907A MMBT2907 ON MMBT2222 MMBT2222A
Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
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MMBT2907
MMBT2907A
MMBT2222
MMBT2222A
OT-23
MMBT2907
150mA,
500mA,
100MHz
MMBT2907A
MMBT2907 ON
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MMBT2222ALT1 1P
Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
Text: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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MMBT2222/ALT1
MMBT2907/ALT1
225mW
OT-23
MMBT2222ALT1 1P
transistor 2222a CURRENT GAIN
MMBT2222
equivalent of transistor MMBT2222A
m1b marking
transistor 2222a
npn 2222 transistor
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MMBT2907A
Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
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MMBT2907
MMBT2907A
MMBT2222
MMBT2222A
OT-23
MMBT2907A
Application of MMBT2907A
MMBT2907 ON
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2907 TRANSISTOR PNP
Abstract: 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F
Text: MMBT2907/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2222/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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MMBT2907/ALT1
MMBT2222/ALT1
225mW
OT-23
2907 TRANSISTOR PNP
2907a TRANSISTOR PNP
MMBT2222
MMBT2907
MMBT2907 2F
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mmbt2709
Abstract: MMBT2709A MMBT27 MMBT2907A-2F MMBT2222 MMBT2222A MMBT2907 MMBT2907A MMBT2907 2F
Text: MMBT2907, MMBT2907A PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1
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MMBT2907,
MMBT2907A
OT-23
O-236)
UL94V-0
MMBT2907
MMBT2222,
MMBT2222A
mmbt2709
MMBT2709A
MMBT27
MMBT2907A-2F
MMBT2222
MMBT2222A
MMBT2907
MMBT2907A
MMBT2907 2F
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Untitled
Abstract: No abstract text available
Text: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
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MMBT2907
MMBT2907A
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
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MMBT2907
MMBT2907A
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor PNP MMBT2907/A -G (RoHS Device) Features Epitaxial Planar Die Comstruction Complementary NPN Type Available (MMBT2222A-G) Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data .122 (3.1) .110 (2.8) Case: SOT-23 Plastic Package
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MMBT2907/A
MMBT2222A-G)
OT-23
OT-23
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2907 pnp transistor
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU MMBT2907 A LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features PNP Silicon process design, excellent power dissipation offers • Batch
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FM120-M+
MMBT2907
FM1200-M+
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
2907 pnp transistor
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Untitled
Abstract: No abstract text available
Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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PN2907
MMBT2907
OT-23
PN2907A
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Untitled
Abstract: No abstract text available
Text: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 * “G” Lead Pb -Free 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO
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MMBT2907
MMBT2907A
OT-23
OT-23
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PN2907
Abstract: transistor PN2907 PN2907 datasheet MMBT2907 PN2907A
Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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PN2907
MMBT2907
OT-23
PN2907A
PN2907
transistor PN2907
PN2907 datasheet
MMBT2907
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2907 TRANSISTOR PNP
Abstract: transistor PN2907
Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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PN2907
MMBT2907
PN2907
OT-23
PN2907A
O-92-3
2907 TRANSISTOR PNP
transistor PN2907
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FAN7602
Abstract: AN6014 AN-6014 PN2907
Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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PN2907
MMBT2907
PN2907
OT-23
PN2907A
O-92-3
AN-4129:
FAN7601
FAN7602
AN6014
AN-6014
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National Pn2907
Abstract: 2907A 2N2907a national 2N2907 PN2907 MPQ2907 MMBT2907A MMBT2907 2N2907A
Text: National Semiconductor MMBT2907 MMBT2907A PN2907 PN2907A 2N2907 2N2907A MPQ2907* C ° T O -1 16 TO- 9 2 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP General Purpose Amplifier Electrical Characteristics Ta
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MBT2907/MPQ2907/2N2907A/PN2907A/MMBT2907A
PN2907
PN2907A
MMBT2907
MMBT2907A
MPQ2907*
2N2907
2N2907A
MPQ2907
National Pn2907
2907A
2N2907a national
MPQ2907
MMBT2907A MMBT2907
2N2907A
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MMBT2907
Abstract: bt2907a MMBT2907A
Text: M A X IM U M RATINGS Symbol Rating MMBT2907 MMBT2907Í -4 0 -6 0 Unit v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO -5 .0 Vdc ic -6 0 0 mAdc Collector Current — Continuous 60 MMBT2907LT1 MMBT2907ALT1* Vdc Collector-Emitter Voltage Vdc CASE 318-07, STYLE 6
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MMBT2907
MMBT2907Í
MMBT2907LT1
MMBT2907ALT1*
OT-23
O-236AB)
bt2907a
MMBT2907A
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MMBT2907
Abstract: No abstract text available
Text: MO T O R O L A SC XSTRS/R F b&E b3fc>7H54 O O R R Q R b 3> 024 • M A X IM U M RATINGS Rating Symbol MMBT2907 MMBT2907/ v CEO Collector-Base Voltage VCBO Em itter-Base Voltage V e BO - 5 .0 Vdc <c -6 0 0 m Adc C ollector C urrent — C ontinuous -4 0 Unit
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MMBT2907
MMBT2907/
MMBT2907LT1
MMBT2907ALT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MMBT2907 I MMBT2907A www.surgecomponents.com PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. 1. Base 2. Em itter 3. Collector SOT-23 Plastic Package
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MMBT2907
MMBT2907A
OT-23
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBT2907 IME 0 | 711.4142 0 0 0 7 2 5 ? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBT2907
OT-23
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