MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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2N3906 SOT-23
Abstract: K3N SOT-23 SOT-23 2A 2n3906 sot 23 2n3906 sot23 PNP 2N3906 MMBT3906 2N3906 2N3906 die 2n3906 2a
Text: 2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • • MMBT3906 Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available
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2N3906
MMBT3906
2N3904/MMBT3904)
O-92/SOT-23,
MIL-STD-202,
OT-23
OT-23
2N3906 SOT-23
K3N SOT-23
SOT-23 2A
2n3906 sot 23
2n3906 sot23
PNP 2N3906
MMBT3906
2N3906 die
2n3906 2a
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TRANSISTOR SMD MARKING CODE QA
Abstract: smd code marking 2A sot23 transistor smd 303 TRANSISTOR SMD MARKING CODE 2A smd transistor marking p1 TRANSISTOR SMD p1 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 210 smd 303 transistor
Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-HF PNP RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20)
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MMBT3906-HF
OT-23
MMBT3906-HF
QW-HTR01
TRANSISTOR SMD MARKING CODE QA
smd code marking 2A sot23
transistor smd 303
TRANSISTOR SMD MARKING CODE 2A
smd transistor marking p1
TRANSISTOR SMD p1
TRANSISTOR SMD MARKING CODE d2
TRANSISTOR SMD MARKING CODE p1
TRANSISTOR SMD MARKING CODE 210
smd 303 transistor
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MMBT3906-2A
Abstract: MMBT3904 MMBT3906
Text: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2009-04-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1
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MMBT3906
OT-23
O-236)
UL94V-0
MMBT3904
MMBT3906-2A
MMBT3904
MMBT3906
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Untitled
Abstract: No abstract text available
Text: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-10-17 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1
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MMBT3906
OT-23
O-236)
UL94V-0
MMBT3904
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model of 2n3906
Abstract: No abstract text available
Text: MMBT3906 PZT3906 C C C B E TO-92 E B SOT-23 B SOT-223 E C Mark: 2A 2N3906 / MMBT3906 / PZT3906 2N3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
model of 2n3906
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2n3906
Abstract: MMBT3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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PDF
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor MMBT3906-HF RoHS Device Halogen Free PNP Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector
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MMBT3906-HF
OT-23
MMBT3906-HF
XXX2-03
XXX2-04
XXX2-05
XXX2-06
XXX1-07
XXX2-07
XXX1-08
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Untitled
Abstract: No abstract text available
Text: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-16 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1
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MMBT3906
OT-23
O-236)
UL94V-0
MMBT3904
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Mmbt3906
Abstract: 2N3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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2N3906
Abstract: 2N3906 die 2N3906 fairchild die 728p MMBT3906 MMPQ3906 PZT3906
Text: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906 die
2N3906 fairchild die
728p
MMPQ3906
PZT3906
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TRANSISTOR SMD MARKING CODE 2A
Abstract: TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE d2 smd code marking 2A sot23 marking code SS SOT23 transistor TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE 16 TRANSISTOR SMD MARKING CODE X D smd transistor marking code P TRANSISTOR SMD MARKING CODE t 04
Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-HF PNP RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20)
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MMBT3906-HF
OT-23
MMBT3906-HF
XXX2-01
XXX2-02
XXX2-03
XXX2-04
XXX2-05
XXX2-06
TRANSISTOR SMD MARKING CODE 2A
TRANSISTOR SMD MARKING CODE p1
TRANSISTOR SMD MARKING CODE d2
smd code marking 2A sot23
marking code SS SOT23 transistor
TRANSISTOR SMD MARKING CODE UA
TRANSISTOR SMD MARKING CODE 16
TRANSISTOR SMD MARKING CODE X D
smd transistor marking code P
TRANSISTOR SMD MARKING CODE t 04
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MMBT3906-HF
Abstract: marking code SS SOT23 transistor marking code SS SOT23 transistor marking code transistor ad 1v MARKING CODE 16 transistor sot23 TRANSISTOR MARKING CODE ss transistor npn 2A sot 23 marking W1 sot23 ss sot23
Text: General Purpose Transistor MMBT3906-HF PNP RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00)
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MMBT3906-HF
OT-23
MMBT3906-HF
XXX1-01
XXX1-02
XXX1-03
XXX2-01
XXX2-02
XXX2-03
marking code SS SOT23 transistor
marking code SS SOT23
transistor marking code
transistor ad 1v
MARKING CODE 16 transistor sot23
TRANSISTOR MARKING CODE ss
transistor npn 2A sot 23
marking W1 sot23
ss sot23
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MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
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Untitled
Abstract: No abstract text available
Text: MMBT3906 MMBT3906 Surface mount general purpose Si-epitaxial transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-11-07 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm] 1=B
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MMBT3906
OT-23
O-236)
UL94V-0
MMBT3904
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MMBT3906
Abstract: No abstract text available
Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT3906 product family SOT-23 Plastic-Encapsulate Biploar Transistors
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MMBT3906
OT-23
200mA
350mW
250MHz
-10mAdc,
-10mAdc
MMBT3906
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MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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Untitled
Abstract: No abstract text available
Text: MMBT3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor A suffix of "-C" specifies halogen & lead-free ●FEATURES . RoHS Compliant Product . Epitaxial Planar Die Construction . Complementary NPN Type Available A COLLECTOR MMBT3904 L 3
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MMBT3906
MMBT3904)
01-Jun-2002
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MMBT3906G-AE3-R
Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G
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MMBT3906
350mW
MMBT3904
MMBT3906L
MMBT3906G
MMBT3906-AE3-R
MMBT3906L-AE3-R
MMBT3906G-AE3-R
MMBT3906-AL3-R
MMBT3906L-AL3-R
MMBT3906G-AE3-R
VCE30V
MMBT3904
MMBT3906
MMBT3906G
MMBT3906L
marking 2A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
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OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
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MMBT3906
Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Text: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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OCR Scan
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MMBT3906
MMPQ3906
PZT3906
2N3906
MMBT3906
OT-23
MMPQ3906
SOIC-16
OT-223
model of 2n3906
2N3906
MMBT3906 spice
2n3906 2a
E5 sot223
MMBT3906 SOT-23
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MMBT3906 spice
Abstract: 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141
Text: 2N3906 / MMBT3906 / PZT3906 FAIRCHILD S E M IC O N D U C T O R tm 2N3906 C MMBT3906 •# TO-92 BÎ SOT-23 B Mark: 2A PZT3906 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA. Sourced
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OCR Scan
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PDF
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2N3906
PZT3906
OT-223
MMBT3906
OT-23
MMBT3906 spice
2N3906
2N3906 die
728p
200H
MMBT3906
MMPQ3906
PZT3906
LS141
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Untitled
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 F A IR C H IL D S E M IC O N D U C T O R tm 2N3906 ' BE # TO-92 SOT-23 / PZT3906 C MMBT3906 B Mark: 2A PZT3906 B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 ¡iA to 100 mA. Sourced
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OCR Scan
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PDF
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2N3906
MMBT3906
2N3906
OT-23
PZT3906
OT-223
BT3906
MMPQ3906
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FLC 100
Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Text: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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OCR Scan
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PDF
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2N3906
MMPQ3906
MMBT3906
PZT3906
SOIC-16
OT-223
rO-92
b5D113D
0QMQb71
FLC 100
728p
cny 76
200U
2N3906
MMBT3906
MMPQ3906
PZT3906
SOIC-16
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