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    MMBT4401LT1 Price and Stock

    onsemi MMBT4401LT1G

    TRANS NPN 40V 0.6A SOT23-3
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    DigiKey MMBT4401LT1G Cut Tape 108,553 1
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    MMBT4401LT1G Digi-Reel 108,553 1
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    MMBT4401LT1G Reel 108,000 3,000
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    MMBT4401LT1G Reel 10 Weeks 3,000
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    Newark MMBT4401LT1G Cut Tape 98,648 1
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    MMBT4401LT1G Reel 33,000 3,000
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    Onlinecomponents.com MMBT4401LT1G 291,000
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    Rochester Electronics MMBT4401LT1G 295 1
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    Avnet Asia MMBT4401LT1G 27,000 10 Weeks 30,000
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    Master Electronics MMBT4401LT1G 300,000
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    New Advantage Corporation MMBT4401LT1G 13,605,000 1
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    onsemi SMMBT4401LT1G

    TRANS NPN 40V 0.6A SOT23-3
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    DigiKey SMMBT4401LT1G Digi-Reel 53,784 1
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    SMMBT4401LT1G Cut Tape 53,784 1
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    SMMBT4401LT1G Reel 45,000 3,000
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    Avnet Americas SMMBT4401LT1G Reel 0 Weeks, 2 Days 20,000
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    SMMBT4401LT1G Reel 10 Weeks 21,000
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    Mouser Electronics SMMBT4401LT1G 184,702
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    Newark SMMBT4401LT1G Cut Tape 23,881 5
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    SMMBT4401LT1G Reel 9,000
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    TME SMMBT4401LT1G 1
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    Avnet Asia SMMBT4401LT1G 3,000 10 Weeks 3,000
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    Avnet Silica SMMBT4401LT1G 11 Weeks 3,000
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    EBV Elektronik SMMBT4401LT1G 3,000 12 Weeks 3,000
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    Master Electronics SMMBT4401LT1G 96,000
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    onsemi MMBT4401LT1G.

    Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MMBT4401LT1G. Reel 3,000
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    onsemi MMBT4401LT1G (ALTERNATE: 5450371)

    Transistor, Bipolar, Si, NPN, Switching, VCEO 40VDC, IC 600mA, PD 225mW, SOT-23,hFE 40 | ON Semiconductor MMBT4401LT1G
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    RS MMBT4401LT1G (ALTERNATE: 5450371) Bulk 50
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    Motorola Semiconductor Products MMBT4401LT1

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    Bristol Electronics MMBT4401LT1 113,003
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    MMBT4401LT1 22,027 45
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    MMBT4401LT1 2,800
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    Quest Components MMBT4401LT1 90,402
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    MMBT4401LT1 2,400
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    MMBT4401LT1 1,513
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    MMBT4401LT1 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT4401LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT4401LT1 Leshan Radio Company General Purpose Transistor(NPN Silicon) Original PDF
    MMBT4401LT1 Motorola SWITCHING TRANSISTOR Original PDF
    MMBT4401LT1 On Semiconductor Small Signal Switching Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT4401LT1 On Semiconductor Small SignalSwitch Original PDF
    MMBT4401LT1 On Semiconductor Switching Transistor NPN Original PDF
    MMBT4401LT1 On Semiconductor Switching Transistor NPN Original PDF
    MMBT4401LT1 Yangzhou Yangjie Electronic Plastic-Encapsulate Transistor Scan PDF
    MMBT4401LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT4401LT1-D On Semiconductor Switching Transistor NPN Silicon Original PDF
    MMBT4401LT1G On Semiconductor Switching Transistor(NPN Silicon) Original PDF
    MMBT4401LT1G On Semiconductor Small Signal Switching Transistor-NPN (lead free); Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT4401LT1G On Semiconductor Switching Transistor Original PDF

    MMBT4401LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mmbt4401lt1g

    Abstract: MMBT4401LT1 MMBT4401LT3G
    Text: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    MMBT4401LT1G OT-23 O-236) MMBT4401LT1/D mmbt4401lt1g MMBT4401LT1 MMBT4401LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage


    Original
    OT-23 OT-23 MMBT4401LT1 150mA 500mA MMBT4401LT1 100MHz PDF

    1N916

    Abstract: MMBT4401LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT4401LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage


    Original
    MMBT4401LT1 236AB) Temperatu02 1N916 MMBT4401LT1 PDF

    MMBT4401LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 600


    Original
    MMBT4401LT1 r14525 MMBT4401LT1/D MMBT4401LT1 PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 PDF

    MMBT4401LT1

    Abstract: DSA0038472
    Text: MOTOROLA Order this document by MMBT4401LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4401LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original
    MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1/D* MMBT4401LT1 DSA0038472 PDF

    MMBT4401LT1

    Abstract: MMBT4403LT1
    Text: MMBT4403LT1 PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage


    Original
    MMBT4403LT1 MMBT4401LT1 OT-23 4403LT1 10Vdc, 30Vdc, 150mAdc, 15mAdc MMBT4403LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    MMBT4401LT1 PDF

    MMBT4401LT1

    Abstract: marking 2X SOT23
    Text: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original
    OT-23 OT-23 MMBT4401LT1 150mA 500mA MMBT4401LT1 100MHz marking 2X SOT23 PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc


    Original
    MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3G
    Text: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    MMBT4401LT1G MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC


    Original
    MMBT4401LT1 236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4401LT1 1. BASE TRANSISTOR(NPN ) 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : 0.6


    Original
    OT-23 MMBT4401LT1 100MHz 037TPY 950TPY 550REF 022REF PDF

    MBT4401

    Abstract: LMBT44 MBT4401LT1
    Text: WILLAS FM120-M+ MMBT4401LT1 THRU Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation ••Batch We declare that


    Original
    FM120-M+ MMBT4401LTHRU FM1200-M+ OD-123+ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH MBT4401 LMBT44 MBT4401LT1 PDF

    MMBT4401LT1

    Abstract: No abstract text available
    Text: MMBT4401LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original
    MMBT4401LT1 OT-23 100mA 500mA MMBT4401LT1 PDF

    MMBT4401LT1

    Abstract: No abstract text available
    Text: MMBT4401LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original
    MMBT4401LT1 OT-23 100mA 500mA MMBT4401LT1 PDF

    Sc59

    Abstract: SO16 package
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4401LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO


    Original
    MMBT4401LT1 236AB) 300NOT Sc59 SO16 package PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G wcs10
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc


    Original
    MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G wcs10 PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT4401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range


    Original
    MMBT4401LT1 OT-23 -55OC 150OC OT-23 MIL-STD-202E PDF

    BT4401LT1

    Abstract: bt4401
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit v CEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage vebo 6.0 Vdc


    OCR Scan
    MMBT4401LT1 O-236AB) 3b7255 BT4401LT1 bt4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*


    OCR Scan
    MMBT4401LT1* OT-23 O-236AB) PDF

    BT4401LT1

    Abstract: BT4401
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 % MAXIMUM RATINGS Rating Symbol C ollector-E m itter Voltage Value Unit VCEO 40 Vdc C ollector-B ase Voltage VCBO 60 Vdc E m itter-B ase Voltage


    OCR Scan
    MMBT4401LT1 OT-23 O-236AB) BT4401LT1 BT4401LT1 BT4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-£ncapsulate Transistors MMBT4401LT1 T R A N S IS T O R . NPN IK A 'tV H IiS PoWBT dissipai Hill Rcm • 0 .3 W <Tamb=2 5 i'H Collector c jrfe n t Icuul . 0.Ö A C ollector bsse voitag-e V|RR¡raü : 6 0 V Operating and storage iu nctlon lam poraluro rartge


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    OT-23 MMBT44Q1LT1 OT-23 150mA 500mA 100MHi PDF

    Untitled

    Abstract: No abstract text available
    Text: : S v m Se m i ; 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors MMBT4401LT1 FEATURES Power dissipation PCM : 0.3 W Collector current TRANSISTOR NPN (Tamb=25 °C) I cm • 0.6 A Collector base voltage V (br)cbo :60 V Operating and storage junction temperature range


    OCR Scan
    MMBT4401LT1 100MHz OT-23 950TPY 037TPY 550REF 022REF PDF