Untitled
Abstract: No abstract text available
Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.
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Original
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PDF
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MMBTSA1015LT1
MMBTSC1815LT1
OT-23
150mA
100mA,
100Hz,
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Untitled
Abstract: No abstract text available
Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.
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Original
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PDF
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MMBTSC1815LT1
MMBTSA1015LT1
OT-23
150mA
100mA,
|
MMBTSA1015
Abstract: No abstract text available
Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.
|
Original
|
PDF
|
MMBTSA1015LT1
MMBTSC1815LT1
OT-23
150mA
100mA,
100Hz,
MMBTSA1015
|
Untitled
Abstract: No abstract text available
Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.
|
Original
|
PDF
|
MMBTSC1815LT1
MMBTSA1015LT1
OT-23
150mA
100mA,
|
Untitled
Abstract: No abstract text available
Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.
|
Original
|
PDF
|
MMBTSA1015LT1
MMBTSC1815LT1
OT-23
150mA
100mA,
100Hz,
|