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    MMCF4339 Search Results

    MMCF4339 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMCF4339 Motorola Semiconductor Chips Data Book 1976 Scan PDF

    MMCF4339 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MMC4338

    Abstract: MMCF4338 MMCF4339
    Text: MMC4338, MMCF4339 continued E LE C T R IC A L CH A R A CTER ISTICS Characteristic Gate-Source Breakdown Voltage ( lG = 10 MAdc, V DS = 0) Gate Reverse Current (V GS = 30 Vdc, V p g = 0) Gate-Source Pinch-Off Voltage <VDS = 20 Vdc, l D = 1.0 nAdc) Zero-Gate Voltage Drain Current


    OCR Scan     		MMC4338, MMCF4339 MMCF4338 MMCF4339 4-26c, MMC4338 PDF

    "Field-Effect Transistors"

    Abstract: Field Effect Transistors "Field Effect Transistors" field effect transistor MMCF4338 MMCF4339 50VDC
    Text: MMCF4338 MMCF4339 s ilic o n F lip-C hip — N-channel ju n c tio n fie ld e ffe ct transistor designed fo r low-level transistor designed fo r low-level audio and general purpose applications. • D rain and Source Interchangeable • Excellent Performance as High-lmpedance In p u t


    OCR Scan     		MMCF4338 MMCF4339 4-25ain-Gate "Field-Effect Transistors" Field Effect Transistors "Field Effect Transistors" field effect transistor MMCF4338 MMCF4339 50VDC PDF