Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs
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EHA07312
Q62702-G0042
OT-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code
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BGA310
Q62702-G0041
OT143
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code
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Q62702-G0043
OT-143
collect38
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Untitled
Abstract: No abstract text available
Text: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA318
Q62702-G0043
OT143
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marking bms
Abstract: No abstract text available
Text: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA312
Q62702-G0042
OT143
marking bms
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code
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EHA07312
Q62702-G0041
OT-143
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
17fier
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Untitled
Abstract: No abstract text available
Text: TAT9988 CATV GaN Power Doubler MMIC Applications • HFC Nodes • CATV Line Amplifiers • Head End Equipment 40 Pin 5x7 mm QFN Package Product Features • • • • • • • • • • Functional Block Diagram Excellent High Output Linearity High Gain 24dB @ 1000MHz
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TAT9988
1000MHz
50MHz
1000MHz
445mA
TAT9988
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SMM5845V1
Abstract: MMIC marking code U
Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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SMM5845V1B
50ohm
SMM5845V1B
SMM5845V1
MMIC marking code U
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Untitled
Abstract: No abstract text available
Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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SMM5845V1B
50ohm
SMM5845V1B
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Untitled
Abstract: No abstract text available
Text: EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES High Output Power: Pout=30.0dBm typ. Linear Gain: GL=15.0dB (typ.) Frequency Band: 29.5 to 30.0GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5841V1B is a MMIC amplifier that contains a threestages amplifier, internally matched, for standard communications
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EMM5841V1B
50ohm
EMM5841V1B
10fier
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Untitled
Abstract: No abstract text available
Text: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. Linear Gain: GL=25.0dB (typ.) Frequency Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Integrated Power Detector Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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SMM5085V1B
50ohm
SMM5085V1B
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Untitled
Abstract: No abstract text available
Text: EMM5836V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 17.7 to 19.7GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5836V1B is a MMIC amplifier that contains a four-stages
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EMM5836V1B
50ohm
EMM5836V1B
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EMM5074VU
Abstract: EMM5074
Text: EMM5074VU C-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33dBm typ. High Linear Gain: GL=27dB (typ.) Broad Band: 5.8 to 8.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5074VU is a wide band power amplifier MMIC that
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EMM5074VU
33dBm
50ohm
EMM5074VU
EMM5074
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SMA MARKING 1475
Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
SMA MARKING 1475
MurataGRM1555
mmic marking L
MMIC marking code 132
MMIC marking code R
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Untitled
Abstract: No abstract text available
Text: EMM5836V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5836V1B
50ohm
EMM5836V1B
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EMM5832VU
Abstract: No abstract text available
Text: EMM5832VU K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=31.0dBm typ. High Linear Gain: GL=20.0dB (typ.) Broad Band: 21.2 to 26.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage
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EMM5832VU
50ohm
EMM5832VU
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Untitled
Abstract: No abstract text available
Text: EMM5081V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (V1B) DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages
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EMM5081V1B
50ohm
EMM5081V1B
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marking code AN mmic
Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
Text: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage
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M3D124
BGA2002
OT343R
marking code AN mmic
BGA2002
RF TRANSISTOR 2.5 GHZ s parameter
MMIC code D
mmic marking A
4 pin dual-emitter
amplifier marking 4
marking code 02 mmic
mmic marking D
M3D124
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MMIC marking code R
Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
MMIC marking code R
MURATA LQW15A
Germanium power
mmic amplifier marking code l
silicon germanium
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