smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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amplifier 900mhz
Abstract: amplifier siemens marking RF 98 CGY93P
Text: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P
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Q62702G72
amplifier 900mhz
amplifier siemens
marking RF 98
CGY93P
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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0918
Abstract: amplifier siemens gsm signal amplifier marking gain stage GaAs MMIC AMPLIFIER DCS1800 Q62702G0077 CGY0918 CGY 8 pin
Text: CGY 0918 GaAs MMIC l l l l Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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35dBm
34dBm
Q62702G0077
0918
amplifier siemens
gsm signal amplifier
marking gain stage GaAs MMIC AMPLIFIER
DCS1800
Q62702G0077
CGY0918
CGY 8 pin
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Reflow Soldering Guide
Abstract: berex
Text: BeRex Reflow Soldering Guide Application Note RF MMIC Innovator www.berex.com Classification: Reflow Soldering Document Number: Reflow61110 Revision code: 0.1 Reflow Soldering Guide for Surface Mount Devices Name Writer Date Signature BY KIM JH Bae OK Dr. Yoo
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Reflow61110
B61110
Reflow Soldering Guide
berex
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
17fier
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SMM5845V1
Abstract: MMIC marking code U
Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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SMM5845V1B
50ohm
SMM5845V1B
SMM5845V1
MMIC marking code U
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EMM5068
Abstract: No abstract text available
Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages
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EMM5068VU
50ohm
EMM5068VU
EMM5068
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Untitled
Abstract: No abstract text available
Text: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・Linear Gain: GL=25.0dB (typ.) ・Frequency Band: 12.7 to 15.4GHz ・Impedance Matched Zin/Zout=50ohm ・Integrated Power Detector ・Small Hermetic Metal-Ceramic SMT Package(V1B)
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SMM5085V1B
50ohm
SMM5085V1B
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Untitled
Abstract: No abstract text available
Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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SMM5845V1B
50ohm
SMM5845V1B
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Untitled
Abstract: No abstract text available
Text: EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES High Output Power: Pout=30.0dBm typ. Linear Gain: GL=15.0dB (typ.) Frequency Band: 29.5 to 30.0GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5841V1B is a MMIC amplifier that contains a threestages amplifier, internally matched, for standard communications
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EMM5841V1B
50ohm
EMM5841V1B
10fier
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Untitled
Abstract: No abstract text available
Text: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. Linear Gain: GL=25.0dB (typ.) Frequency Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Integrated Power Detector Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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SMM5085V1B
50ohm
SMM5085V1B
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Untitled
Abstract: No abstract text available
Text: EMM5836V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 17.7 to 19.7GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5836V1B is a MMIC amplifier that contains a four-stages
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EMM5836V1B
50ohm
EMM5836V1B
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EMM5832VU
Abstract: No abstract text available
Text: EMM5832VU K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=31.0dBm typ. High Linear Gain: GL=20.0dB (typ.) Broad Band: 21.2 to 26.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage
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EMM5832VU
50ohm
EMM5832VU
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Untitled
Abstract: No abstract text available
Text: EMM5836V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5836V1B
50ohm
EMM5836V1B
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Untitled
Abstract: No abstract text available
Text: EMM5832VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2 to 26.5GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package (VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage
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EMM5832VU
50ohm
EMM5832VU
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Untitled
Abstract: No abstract text available
Text: EMM5081V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (V1B) DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages
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EMM5081V1B
50ohm
EMM5081V1B
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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OCR Scan
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PDF
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Q62702G72
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package
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OCR Scan
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PDF
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CGY93P
Q62702G72
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P.-idB at 1.0 G • 3 dB-bandwidth: DC to 1.2 Gf RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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OCR Scan
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BGA318
EHA07312
Q62702-G0043
T-143
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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BGA310
Q62702-G0041
T-143
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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BGA312
Q62702-G0042
T-143
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CDH60
Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Text: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability
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NEMJ10003
MIL-STD-105
NEMJ10006
MIL-STD-883
CDH60
MMIC code D
PIN diode 12 GHz
60 GHz PIN diode
diode PIN 60 Ghz
mmic j
60 GHz PIN diode gaas
E3 MMIC
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