Reflow Soldering Guide
Abstract: berex
Text: BeRex Reflow Soldering Guide Application Note RF MMIC Innovator www.berex.com Classification: Reflow Soldering Document Number: Reflow61110 Revision code: 0.1 Reflow Soldering Guide for Surface Mount Devices Name Writer Date Signature BY KIM JH Bae OK Dr. Yoo
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Reflow61110
B61110
Reflow Soldering Guide
berex
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs
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EHA07312
Q62702-G0042
OT-143
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code
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Q62702-G0043
OT-143
collect38
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code
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EHA07312
Q62702-G0041
OT-143
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code
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BGA310
Q62702-G0041
OT143
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marking bms
Abstract: No abstract text available
Text: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA312
Q62702-G0042
OT143
marking bms
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Untitled
Abstract: No abstract text available
Text: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA318
Q62702-G0043
OT143
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type pd21
Abstract: siemens inductor B82412-A3221-K B82412-A3471-K CMY91 Q62702-M9 MMIC marking CODE 06
Text: CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1mA typ.
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Q62702-M9
vMY91
220nH
CMY91
100pF
1900MHz
type pd21
siemens inductor
B82412-A3221-K
B82412-A3471-K
CMY91
Q62702-M9
MMIC marking CODE 06
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CDH60
Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Text: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability
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NEMJ10003
MIL-STD-105
NEMJ10006
MIL-STD-883
CDH60
MMIC code D
PIN diode 12 GHz
60 GHz PIN diode
diode PIN 60 Ghz
mmic j
60 GHz PIN diode gaas
E3 MMIC
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IRF 1450
Abstract: km 1667 km 1667 datasheet mmic marking code j
Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23
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Q62702-M9
01-coil;
B82412-A3221-M
900MHz
1450MHz
1900MHz
IRF 1450
km 1667
km 1667 datasheet
mmic marking code j
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HMC510
Abstract: HMC6000LP711E HMC6147 HMC835
Text: Microwave Solutions Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Communication, Test & Measurement & Sensor Solutions, 2 to 86 GHz • Microwave Radio Links • Point-to-Multi-Point Radios • Test & Measurement Equipment • Sensors & Radar
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12T67
Abstract: bb2412 ipip3 T350 MARKING MHT siemens 1q B82412-A3100-M MMIC marking CODE cf fgmd d794
Text: GaAs MMIC SIEMENS P r e lim in a r y CMY 95 d a t a * G aAs mixer with integrated IF-amplifierer fo r mobile com m unication ‘ Frequency range 0.8 GHz to 2.5 GHz ‘ Very low power consumption 1mA lyp. * G ood intermodulatfon perform ance * Single positive supply voltage
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HLEHFD21/HB
12T67
bb2412
ipip3
T350
MARKING MHT
siemens 1q
B82412-A3100-M
MMIC marking CODE cf
fgmd
d794
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BGA2776
Abstract: SMD MARKING g5 snw-eq-608 MGU455
Text: BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BGA2776
BGA2776
SMD MARKING g5
snw-eq-608
MGU455
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mmic code marking P 18
Abstract: MMIC marking CODE 06 rf mmic marking code 09 SOT363 CSH210 rf mmic marking code 26 SOT363
Text: GaAs MMIC CSH210 Preliminary Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device
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CSH210
OT363
OT363
CSH210
mmic code marking P 18
MMIC marking CODE 06
rf mmic marking code 09 SOT363
rf mmic marking code 26 SOT363
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RF MODULE CIRCUIT DIAGRAM dect
Abstract: DECT siemens MMIC marking code R
Text: SIEMENS GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 ii, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
CGY180
RF MODULE CIRCUIT DIAGRAM dect
DECT siemens
MMIC marking code R
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rf mmic marking code 26 SOT363
Abstract: marking code 02 mmic mmic 26 SOT363 rf mmic marking code 09 SOT363 CSH210R MMIC code D mmic "Marking 19" rf mmic 26 SOT363 INFINEON SOT363 marking code AN mmic
Text: GaAs MMIC CSH210R Target Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device
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CSH210R
OT363
OT363
CSH210R
rf mmic marking code 26 SOT363
marking code 02 mmic
mmic 26 SOT363
rf mmic marking code 09 SOT363
MMIC code D
mmic "Marking 19"
rf mmic 26 SOT363
INFINEON SOT363
marking code AN mmic
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sot363 gaAS
Abstract: CSH210 CSH210P 30GHz switch
Text: GaAs MMIC CSH210P Target Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • High IP3 • No supply Voltage needed • Positive Operating voltage range: 2.7 to 5 V • SOT363 package 2mm x 2mm
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CSH210P
OT363
OT363
CSH210P
sot363 gaAS
CSH210
30GHz switch
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MMIC SOT 143 marking CODE 77
Abstract: MARKING SOT-143 C5
Text: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz
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YPS05178
Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
MARKING SOT-143 C5
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MMIC marking CODE c4
Abstract: No abstract text available
Text: GaAs MMIC CGB 241 Target Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V
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23dBm
16dBm
35dBc
IEEE802
06035J1R8BBT
LL1608-FS
MMIC marking CODE c4
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB 241 Target Datasheet • • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
35dBc
IEEE802
06035J1R8BBT
LL1608-FS
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MMIC SOT 143 marking CODE 77
Abstract: MMIC marking 77 CGY50 Q68000-A8370 MMIC marking code U MARKING SOT-143 C5
Text: SIEMENS GaAs MMIC CG Y 50 D a t a s h e e t * Single-stage monolithic microwave 1C MMICam plifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz
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VPS05175
Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
MMIC marking 77
CGY50
Q68000-A8370
MMIC marking code U
MARKING SOT-143 C5
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