Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package
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CGY93P
Q62702G72
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PDF
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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PDF
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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PDF
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amplifier 900mhz
Abstract: amplifier siemens marking RF 98 CGY93P
Text: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P
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Q62702G72
amplifier 900mhz
amplifier siemens
marking RF 98
CGY93P
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PDF
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0918
Abstract: amplifier siemens gsm signal amplifier marking gain stage GaAs MMIC AMPLIFIER DCS1800 Q62702G0077 CGY0918 CGY 8 pin
Text: CGY 0918 GaAs MMIC l l l l Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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35dBm
34dBm
Q62702G0077
0918
amplifier siemens
gsm signal amplifier
marking gain stage GaAs MMIC AMPLIFIER
DCS1800
Q62702G0077
CGY0918
CGY 8 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P.-idB at 1.0 G • 3 dB-bandwidth: DC to 1.2 Gf RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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OCR Scan
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BGA318
EHA07312
Q62702-G0043
T-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs
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EHA07312
Q62702-G0042
OT-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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OCR Scan
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BGA310
Q62702-G0041
T-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code
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OCR Scan
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BGA310
Q62702-G0041
OT143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code
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OCR Scan
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BGA312
Q62702-G0042
T-143
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code
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OCR Scan
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Q62702-G0043
OT-143
collect38
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PDF
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BGA310
Abstract: Q62702-G0041
Text: BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 9 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.4 GHz l Plastic Package -1dB Type Marking BGA310 BLs Ordering Code 8-mm taped Q62702-G0041
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BGA310
Q62702-G0041
OT143
BGA310
Q62702-G0041
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PDF
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BGA318
Abstract: Q62702-G0043
Text: BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 16 dB typical Gain at 1.0 GHz l 12 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 1.2 GHz l Plastic Package -1dB Type Marking BGA318 BNs Ordering Code 8-mm taped Q62702-G0043
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BGA318
Q62702-G0043
OT143
BGA318
Q62702-G0043
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PDF
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BGA312
Abstract: Q62702-G0042 mmic-amplifier BMS 13-58 Type 01
Text: BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 11 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.0 GHz l Plastic Package -1dB Type Marking BGA312 BMs Ordering Code 8-mm taped Q62702-G0042
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BGA312
Q62702-G0042
OT143
BGA312
Q62702-G0042
mmic-amplifier
BMS 13-58 Type 01
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PDF
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marking bms
Abstract: No abstract text available
Text: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-8andwidth: DC to 2.0 GHz Plastic Package Type Marking Ordering Code 8-mm taped
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BGA312
Q62702-G0042
OT143
marking bms
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 £2-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidttv. DC to 2.0 GHz Plastic Package Type Marking BGA312 BMs Ordering Code
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BGA312
Q62702-G0042
OT143
te010
DDTDS33
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code
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EHA07312
Q62702-G0041
OT-143
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PDF
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LOT CODE NEC
Abstract: marking e2 mmic MMIC marking code U mmic marking code nec lot number on REEL label code marking NEC date code marking NEC nec mmic marking code nec example of lot number nec lot number on packing label
Text: Information TAPING SPECIFICATIONS OF 8 PIN PLASTIC SSOP 175 mil FOR Silicon/GaAs MMIC Document No. P12403EJ2V0IF00 (2nd edition) Date Published March 1998 N CP(K) 1997 Printed in Japan The information in this document is subject to change without notice.
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P12403EJ2V0IF00
such588-6130
LOT CODE NEC
marking e2 mmic
MMIC marking code U
mmic marking code
nec lot number on REEL label
code marking NEC
date code marking NEC
nec mmic marking code
nec example of lot number
nec lot number on packing label
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Untitled
Abstract: No abstract text available
Text: TAT9988 CATV GaN Power Doubler MMIC Applications • HFC Nodes • CATV Line Amplifiers • Head End Equipment 40 Pin 5x7 mm QFN Package Product Features • • • • • • • • • • Functional Block Diagram Excellent High Output Linearity High Gain 24dB @ 1000MHz
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TAT9988
1000MHz
50MHz
1000MHz
445mA
TAT9988
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PDF
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
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PDF
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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PDF
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Untitled
Abstract: No abstract text available
Text: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION
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EMM5838V1B
50ohm
EMM5838V1B
17fier
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PDF
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CXM3592AUR-T9
Abstract: ic 8355 jammer gsm
Text: Ultra-High Linearity SPDT Switch CXM3592AUR Description The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems. The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder.
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CXM3592AUR
CXM3592AUR
IMT2000
CXM3592AUR-T9
Code875340755
Code875342695
ic 8355
jammer gsm
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PDF
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