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    MMIC S-BAND LNA Search Results

    MMIC S-BAND LNA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    F6922AVRI8 Renesas Electronics Corporation Dual-Channel Low Noise Amplifier for Ka-Band SATCOM Visit Renesas Electronics Corporation
    F6921AVRI Renesas Electronics Corporation Dual-Channel Low Noise Amplifier for Ku-Band SATCOM Visit Renesas Electronics Corporation

    MMIC S-BAND LNA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IS-54

    Abstract: SPDT FETs uPG13xG
    Text: µPG13xG SERIES L-BAND SPDT SWITCH GaAs MMIC 1. OVERVIEW OF SERIES The µPG13xG Series is a collection of GaAs MMICs developed as SPDT Single-Pole, Double-Throw switches for digital mobile communications terminals on the L to S bands. These ICs can operate from 100 MHz to 2.5 GHz


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    PG13xG PG130G PG131G IS-54 SPDT FETs uPG13xG PDF

    BGA622L7

    Abstract: Germanium Amplifier Germanium power
    Text: Target Data, BGA622L7, July 2004 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier MMIC Secure Mobile Solutions Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2004-07-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


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    BGA622L7, BGA622L7 D-81541 100nH 150pF 100nF 1575MHz BGA622L7 Germanium Amplifier Germanium power PDF

    INFINEON package PART MARKING

    Abstract: BGA622
    Text: Preliminary data sheet, BGA622, Aug. 2002 BGA622 Silicon Germanium Wide Band Low Noise Amplifier MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-08-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


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    BGA622, BGA622 D-81541 14GHz, GPS05605 INFINEON package PART MARKING BGA622 PDF

    BGA622L7

    Abstract: INFINEON marking amplifier
    Text: Data Sheet, Nov. 2004 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier MMIC Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2004-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2004


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    BGA622L7 BGA622L7 INFINEON marking amplifier PDF

    BGA430

    Abstract: VPS05604
    Text: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , M a y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    D-81541 BGA430 OT-363 EHA07193 BGA430 VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , Ja n u a r y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-01-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    D-81541 BGA430 100pF BGA430 EHA07193 OT-363 PDF

    b6hf marking

    Abstract: No abstract text available
    Text: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , M a y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    D-81541 BGA430 100pF BGA430 EHA07193 OT-363 b6hf marking PDF

    CAP 0402

    Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
    Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


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    CMH0819 VQFN-24 CMH0819 CAP 0402 GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8 PDF

    Untitled

    Abstract: No abstract text available
    Text: ;6 21  BGU8L1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8L1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external


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    Untitled

    Abstract: No abstract text available
    Text: ;6 21  BGU8M1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8M1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external


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    Untitled

    Abstract: No abstract text available
    Text: ASL033 5 ~ 4000 MHz MMIC Amplifier Features Description  14.6 dB Gain at 470 MHz  17 dBm P1dB at 470 MHz  18 dBm Output IP3 at 470 MHz  1.2 dB NF at 470 MHz  MTTF > 100 Years  Single Supply ASL033 is a one-stage LNA for mobile TV receiver


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    ASL033 ASL033 OT363 OT363 OT-363 40x40 PDF

    Untitled

    Abstract: No abstract text available
    Text: ;6 21  BGU8H1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8H1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external


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    mmic c8

    Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm


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    CMH192 Q62705-K608 VQFN-20 10ability CMH192 mmic c8 mmic MIXER 210 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608 PDF

    LNA ka-band

    Abstract: MITSUBISHI CAPACITOR
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band


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    MGFC5109 MGFC5109 LNA ka-band MITSUBISHI CAPACITOR PDF

    ka-band amplifier

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band


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    MGFC5110 GFC5110 100pF ka-band amplifier PDF

    Vl02

    Abstract: 9.75 GHz oscillator
    Text: D a ta S h e e l ^ EiMhDIGICS Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs ÍC Source _ REV 2 FUNCTIONAL i? ®! Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability


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    AKD2806 Vl02 9.75 GHz oscillator PDF

    Untitled

    Abstract: No abstract text available
    Text: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING


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    MGF7134P 90GHz MGF7134P 55dBc 240MHz) PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip


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    MGFC5107 MGFC5107 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip


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    MGFC5107 MGFC5107 100pF PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip


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    MGFC5108 MGFC5108 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip


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    MGFC5109 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Am plifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5110 is a GaAs MMIC chip


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    MGFC5110 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Information TFE-1050 915 MHz to 2.4 GHz GaAs MMIC Transceiver Features: ♦ ♦ ♦ ♦ ♦ ♦ Half Duplex C onverter Fully Integrated RF Transceiver Functions 30 dB Transm it Conversion Gain 24 dBm Output Power at ±5v Application to U S/International 2.4 GHz Band


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    TFE-1050 28-lead TFE-1050 TKE-1050 25-pin IVE1050 PDF

    MIL-STD-2015

    Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
    Text: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low


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    1500-MHz 1900-MHz 900-MHz MIL-STD-2015 MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800 PDF