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    Microchip Technology Inc MO9070

    K-Band Detector, Projected EOL: 2044-08-15
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    Microchip Technology Inc MO9070 32 Weeks
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    Microchip Technology Inc MO9070-01

    K-BAND VCO, Projected EOL: 2044-08-15
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    Microchip Technology Inc MO9070-01 32 Weeks
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    Microchip Technology Inc MO9070-06

    K-BAND VCO
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    NAC MO9070-06 5
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    MO9070 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gunn diode radar

    Abstract: gunn diode x band radar gunn diode 10.5 ghz radar gunn diode varactor diode for x band radar Gunn Diode MO87108 x band gunn diode gunn diode oscillator gunn diode datasheet
    Text: GUNN OSCILLATORS Voltage Controlled TM MO87108 – MO9405 Features ● Low Cost ● High-Volume Design ● Various Output Power Levels ● Pulsed DC Input Voltage ● Low-Power Consumption ● FM CW Operation Applications ● Intrusion Alarm Systems ●


    Original     		MO87108 MO9405 WR-42 UG/595-U, MO9070 UG599/U WR-28 gunn diode radar gunn diode x band radar gunn diode 10.5 ghz radar gunn diode varactor diode for x band radar Gunn Diode MO87108 x band gunn diode gunn diode oscillator gunn diode datasheet PDF

    GUNN OSCILLATORS

    Abstract: gunn diode 10.5 ghz
    Text: GUNN OSCILLATORS Voltage Controlled TM MO87108 – MO9405 Features ● Low Cost ● High-Volume Design ● Various Output Power Levels ● Pulsed DC Input Voltage ● Low-Power Consumption ● FM CW Operation Applications ● Intrusion Alarm Systems ●


    Original     		MO87108 MO9405 Number95-U, WR-42 UG/595-U, MO9070 UG599/U WR-28 GUNN OSCILLATORS gunn diode 10.5 ghz PDF

    2SC3814

    Abstract: NE0900-07 2SC3816 2SC3815
    Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR n e m 090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N EM 0900-07 series of NPN silicon epitaxial UHF power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.


    OCR Scan     		NE0900-07 NEM0900-07 2SC3814 2SC3816 2SC3815 PDF