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    9UMS9633BKLFT Renesas Electronics Corporation Ultra Mobile PC/Mobile Internet Device Visit Renesas Electronics Corporation
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    Maxim Integrated Products MOBILEPOCKET

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    Development Software Remote access client for iOS and Android. Provides secure, on-demand access to remote devices using a web interface.
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    congatec AG conga-Qseven Mobility Kit

    Development Boards & Kits - x86 QSEVEN STARTER KIT FOR MOBILE APPS
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    Akro-Mils APRDMOBILE

    Mobile Kit For Double-Sided Pick Rack System; For Use With:Akro-Mils Double-Sided Pick Rack Systems; Accessory Type:Mobile Kit; Product Range:-; Body Material:Steel; Colour:Gray Rohs Compliant: Na |Akro-Mils APRDMOBILE
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    MOBIL Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AED32A MOBILE DOCTOR Co. MPEG1/2/2.5 Layer3 Encoder/Decoder with Time-scale Modification Original PDF
    Mobile AMD-K6 Advanced Micro Devices Mobile AMD-K6 Processor Data Sheet Original PDF
    Mobile AMD-K6-2+ Advanced Micro Devices Mobile AMD-K6-2+ Processor Data Sheet Original PDF
    Mobile AMD-K6-III+ Advanced Micro Devices Mobile AMD-K6-III+ Processor Data Sheet Original PDF
    Mobile AMD-K6-III-P Advanced Micro Devices Mobile AMD-K6-III-P Processor Data Sheet Original PDF
    Mobile-Celeron Intel Mobile Intel Celeron Processor (0.18u) in BGA2 Package Original PDF
    MOBILE CELERON UPGA/BGA Intel MOBILE CELERON PROCESSOR IN MICRO-PGA AND BGA PACKAGES AT 466 MHZ, 433 MHZ, 400 MHZ, 366 MHZ, 300 MHZ, AND 266 MHZ DATASHEET Original PDF
    Mobile ICs NXP Semiconductors Application Guide Book: Mobile Phones and chargers. The power semiconductors they use. Original PDF
    Mobile Intel Celeron Intel Intel Celeron Processor (0.13 u) in Micro-fcpga and Micro-fcbga Packages Original PDF
    Mobile-Pentium Intel Mobile Pentium Processor with MMX Technology (0.25 Micron Process) Original PDF
    MOBILE-PENTIUMII Intel MOBILE PENTIUM II PROCESSOR IN MINI-CARTRIDGE PACKAGE AT 300 MHZ Original PDF
    Mobile-PentiumIII Intel Mobile Intel Pentium III Processor in BGA2 Original PDF
    Mobile-RAM 128M Infineon Technologies Mobile-RAM 128M Original PDF
    MOBILGEAR 627 Unknown MOBILGEAR 627:GEAR OIL 20LT Original PDF
    MOBILGEAR 632 Unknown MOBILGEAR 632:GEAR OIL 20LT Original PDF
    MOBILGEAR 634 Unknown MOBILGEAR 634:GEAR OIL 20LT Original PDF
    MOBILGEAR 636 Unknown MOBILGEAR 636:GEAR OIL 20LT Original PDF

    MOBIL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)


    Original     		PDF TPC8075

    7M9102

    Abstract: schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9 TQP7M9102
    Text: TQP7M9102 ½W High Linearity Amplifier Applications • •   Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features          Functional Block Diagram 400-4000 MHz


    Original     		PDF TQP7M9102 OT-89 TQP7M9102 7M9102 schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9

    Untitled

    Abstract: No abstract text available
    Text: TQM7M4022 Preliminary data sheet 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module Description: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability


    Original     		PDF TQM7M4022 GSM850/900/DCS/PCS GSM85el

    41315

    Abstract: 30424 45560
    Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TQP4M9072 High Linearity 6-Bit, 31.5dB Digital Step Attenuator Applications •     Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and RF Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package 3


    Original     		PDF TQP4M9072 24-pin

    WiMAX transceivers

    Abstract: ah225
    Text: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz


    Original     		PDF AH225 AH225 WiMAX transceivers

    s-parameter s11 s12 s21

    Abstract: No abstract text available
    Text: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block


    Original     		PDF TQP369185 OT-89 TQP369185 s-parameter s11 s12 s21

    Untitled

    Abstract: No abstract text available
    Text: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)


    Original     		PDF TPCA8063-H

    Untitled

    Abstract: No abstract text available
    Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its


    Original     		PDF

    ofdm transceiver 900mhz

    Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
    Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure


    Original     		PDF TQP8M9013 24-pin TQP8M9013 ofdm transceiver 900mhz 433 mhz rf power amplifier module efficiency 04023J2R2BBS

    45560

    Abstract: No abstract text available
    Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its


    Original     		PDF

    LTE filter band 40

    Abstract: 885007 LTE band 40 LQW15AN1N0C00 LTE bandpass filter
    Text: 885007 2436 MHz BAW Filter Applications WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points Applicable reject bands: 2.6 GHz WiMAX/LTE,


    Original     		PDF 40/Indian LTE filter band 40 885007 LTE band 40 LQW15AN1N0C00 LTE bandpass filter

    Untitled

    Abstract: No abstract text available
    Text: TQM7M4022 Preliminary data sheet 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module Description: Package Outline: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability


    Original     		PDF TQM7M4022 GSM850/900/DCS/PCS GSM850 GSM900 GSM850/GSM900

    TPCA8A09-H

    Abstract: No abstract text available
    Text: TPCA8A09-H MOSFETs Silicon N-Channel MOS U-MOS-H/Schottky Barrier Diode TPCA8A09-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)


    Original     		PDF TPCA8A09-H TPCA8A09-H

    Untitled

    Abstract: No abstract text available
    Text: TQP4M9071 High Linearity 6-Bit, 31.5dB Digital Step Attenuator Applications •     Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and RF Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package D4


    Original     		PDF TQP4M9071 24-pin

    Untitled

    Abstract: No abstract text available
    Text: TPCC8064-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCC8064-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.0 nC (typ.)


    Original     		PDF TPCC8064-H

    TQP3M9035

    Abstract: 4450F 4450F rogers 0 DFN triquint 2x2 dfn
    Text: TQP3M9035 High Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2mm 8-lead DFN plastic package Product Features • •   • • • •


    Original     		PDF TQP3M9035 TQP3M9035 4450F 4450F rogers 0 DFN triquint 2x2 dfn

    zhcs1006ta

    Abstract: zhcs1006
    Text: SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 1 - NOVEMBER 1997 ZHCS1006 ✪ FEATURES: • High current capability • Low V F APPLICATIONS: • Mobile telecomms, PCMIA & SCSI • DC-DC Conversion PARTMARKING DETAILS : S16 1 C 2 1


    Original     		PDF ZHCS1006 1000mA t10ms 15mmx15mm 522-ZHCS1006TA ZHCS1006TA zhcs1006ta zhcs1006

    Untitled

    Abstract: No abstract text available
    Text: MAPC-104 PC/104-Plus Series www.murata-ps.com Non-Isolated, DC/DC Converters 3.3, 5.1 & 12.4, 46W Mobile Applications FEATURES „ 46 Watts for Mobile Access Router to IP/Networks „ PC/104-Plus compatible/stackable, powering Cisco system cards „ 9 to 32V input range, supporting both


    Original     		PDF MAPC-104 PC/104-Plus 25mVp-p UL/IEC/EN6092048-1151

    OVM7692-RYAA

    Abstract: OVM7962 OVM7692 camera edge correction defective pixel correction OVM7692-RAAA DVP MIPI SCCB ovm769 MDN 640
    Text: OVM7692 lead free available in a lead-free package 640 x 480 CameraCubeChip product brief Feature-Rich VGA CameraCubeChip™ for Mobile and Picture Phone Applications The OVM7692 VGA CameraCubeChip delivers proven performance and an extended feature set in an ultracompact size to meet the performance and manufacturing


    Original     		PDF OVM7692 OVM7692 OVM7692-RYAA OVM7962 camera edge correction defective pixel correction OVM7692-RAAA DVP MIPI SCCB ovm769 MDN 640

    CFU450

    Abstract: TA31132F ta31132 cdbm c3
    Text: IF DETECT ICs FM IF DETECTION 1C FOR CORDLESS TELEPHONE-MOBILE TELEPHONE FEA TU RES • B u ilt-in 2 n d M I X M I X O p e r a t in g F r e q u e n c y : 1 0 ~ 1 0 0 M H z • 2 IF a m p . circuits can lim it a B a n d w id t h a c c o rd in g to a u sage


    OCR Scan     		PDF TA31132F/FN-9 CFU450B2 TA31132F/FN-10 CFU450 TA31132F ta31132 cdbm c3

    audio compressor expander IC 8 pin

    Abstract: audio compressor expander IC, 8 pin
    Text: Compander IC MM1100 MâïSUMÎ Monolithic IC M M 1100 This IC was developed for use in mobile communication equipment. It is a compander IC incorporating compressor/expander circuits for a significant noise reduction effect without complicated external circuitry.


    OCR Scan     		PDF MM1100 OP-14B MM1100XF) audio compressor expander IC 8 pin audio compressor expander IC, 8 pin

    2745T

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile


    OCR Scan     		PDF uPC2745TB uPC2746TB //PC2745TB //PC2746TB //PC2745T/ //PC2746T //PC2745TB///PC2746TB //PC2745T///PC2746T. 2745T

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor