varicap diodes
Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Text: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld
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PF0032
PF0040
PF0042
PF0045A
PF0065
PF0065A
HWCA602
HWCB602
HWCA606
HWCB606
varicap diodes
BIPOLAR TRANSISTOR
dual gate mosfet in vhf amplifier
hitachi SAW Filter
gsm module with microcontroller
p channel mosfet
Transistors mosfet p channel
Mosfet transistor hitachi
Low frequency power transistor
vhf fet lna
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marking C3E
Abstract: PC2771T Transistor C3E nH/Transistor C3E
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8181TB 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8181TB
PC8181TB
marking C3E
PC2771T
Transistor C3E
nH/Transistor C3E
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marking 3f 6pin
Abstract: PC2771T marking C3f F MARKING 6PIN
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
marking 3f 6pin
PC2771T
marking C3f
F MARKING 6PIN
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MARKING C3F
Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
HS350
WS260
VP215
IR260
PU10206EJ01V0DS
MARKING C3F
PC8181TB
F MARKING 6PIN
transistor marking wt
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RA30H4452M
Abstract: RA30H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA30H4452M
440-520MHz
RA30H4452M
30-watt
520-MHz
RA30H4452M-101
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vHF amplifier module
Abstract: 2222 852 47103 PHILIPS VHF AMPLIFIER MODULE LIST ferrite rg 316 double heatsink catalogue BGY143 broadband amplifier module
Text: Philips Semiconductors Product specification VHF power amplifier module DESCRIPTION Broadband amplifier module, designed for mobile communications equipment operating directly from 12 V electrical systems. The module consists of a two stage RF amplifier using NPN transistor
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OCR Scan
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BGY143
OT132B
MRCZ73
711002b
OT132B.
vHF amplifier module
2222 852 47103
PHILIPS VHF AMPLIFIER MODULE LIST
ferrite rg 316 double
heatsink catalogue
BGY143
broadband amplifier module
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RA33H1516M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
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RA20H8087M
Abstract: RA20H8087M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to
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RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
RA20H8087M-101
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RA30H3340M
Abstract: RA30H3340M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA30H3340M
330-400MHz
RA30H3340M
30-watt
400-MHz
RA30H3340M-101
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RA60H3847M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to
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RA60H3847M1
378-470MHz
RA60H3847M1
60-watt
470-MHz
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RA45H4047M
Abstract: RA45H4047M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4047M
400-470MHz
RA45H4047M
45-watt
470-MHz
RA45H4047M-101
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RA30H4552M1
Abstract: RA30H4552M1-101 st 074c
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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450-520MHz
RA30H4552M1
30-watt
520-MHz
RA30H4552M1
RA30H4552M1-101
st 074c
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PDF
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C741C
Abstract: RA13H1317M RA13H1317M-101 RA55H4047M 741C op amp
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA13H1317M
135-175MHz
RA13H1317M
13-watt
175-MHz
RA55H4047M
C741C
RA13H1317M-101
RA55H4047M
741C op amp
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.
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RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.
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RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
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RA18H1213G
Abstract: RA18H1213G-101 263rd dd408
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
263rd
dd408
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PDF
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RA13H4047M
Abstract: RA13H4047M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA13H4047M
400-470MHz
RA13H4047M
13-watt
470-MHz
RA13H4047M-101
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PDF
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RA55H4452M
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA55H4452M
440-520MHz
RA55H4452M
55-watt
520-MHz
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RA20H8994M
Abstract: 2 x 20w amplifier
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to
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RA20H8994M
896-941MHz
RA20H8994M
20-watt
941-MHz
2 x 20w amplifier
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RA55H4047M
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4047M RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA55H4047M
400-470MHz
RA55H4047M
55-watt
470-MHz
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RA55H3340M
Abstract: RA55H3340M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M RoHS Compliance, 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA55H3340M
330-400MHz
RA55H3340M
55-watt
400-MHz
RA55H3340M-101
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PDF
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st 074c
Abstract: RA30H4047M1 transistor a 1941 RA30H4047 rf power amplifier circuit by 400-470mhz
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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400-470MHz
RA30H4047M1
30-watt
470-MHz
RA30H4047M1
st 074c
transistor a 1941
RA30H4047
rf power amplifier circuit by 400-470mhz
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RA80H1415M1
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz
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RA80H1415M1
144-148MHz
136-174MHz
RA80H1415M1
80-watt
148-MHz
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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