MODEL CGH25120F Search Results

MODEL CGH25120F Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPS6508700RSKR		Texas Instruments	PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85
TPS6508700RSKT		Texas Instruments	PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85

MODEL CGH25120F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RF Transistor s-parameter Abstract: j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512 CGH25120F-Tfor RF Transistor s-parameter j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
CGH25120F Abstract: J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22 Text: PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512 J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22
Untitled Abstract: No abstract text available Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512 CGH25120F-Tpplications
Untitled Abstract: No abstract text available Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512
ofdm predistortion Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based	Original	PDF