Modeling Device Power Consumption
Abstract: AT6005
Text: Modeling Device Power Consumption Introduction The following provides a simple method for modeling the active and static power consumption of a AT6005 design. Active Power Consumption Active power consumption is a function of the distribution of resources in a
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AT6005
0477C
09/99/xM
Modeling Device Power Consumption
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AT6005
Abstract: No abstract text available
Text: FPGA Modeling Device Power Consumption Introduction The following provides a simple method for modeling the active and static power consumption of a AT6005 design. Active Power Consumption Active power consumption is a function of the distribution of resources in a design and
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AT6005
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AT6005
Abstract: No abstract text available
Text: FPGA Modeling Device Power Consumption Introduction The following provides a simple method for modeling the active and static power consumption of a AT6005 design. Active Power Consumption Active power consumption is a function of the distribution of resources in a design and the number of nets switching
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AT6005
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Position Estimation
Abstract: No abstract text available
Text: White Paper FPGA Power Management and Modeling Techniques Introduction As designs get larger and add more system functions implemented on FPGAs, and as the advanced silicon process technology moves into smaller geometries, power consumption is increasingly a concern for today’s FPGAs. When
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351nF DesignCon 2010 Analysis FPGA Noise Propagation Package Modeling Altera Corporation
Abstract: 400um XCItepi powersi 50GHZ 351nF Design Seminar Signal Transmission Fabrication process steps metal core pcb
Text: DesignCon 2010 Analysis of FPGA PDN Noise Propagation by Die & Package 3D Modeling Zhe Li, Altera Corporation ZLI@altera.com Dr. Hong Shi, Altera Corporation hshi@altera.com Kenneth Kwan, Altera Corporation kkwan@altera.com Dr. John Y. Xie, Altera Corporation
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LTE baseband chip
Abstract: Serial RapidIO LTE baseband RapidIO vita CPS-10Q gen2 LTE Receiver VITA46
Text: semiconductor solutions ® Serial RapidIO —The Second Generation ® Serial RapidIO Gen2 solutions from IDT increase performance, reduce power consumption, and lower design costs. Feature enhancements IDT is enhancing many features in its RapidIO 1.3 offering as we bring Gen2
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10-09/MG/BWD/DC/r2v1
FLYR-SRIOG2-109
LTE baseband chip
Serial RapidIO
LTE baseband
RapidIO
vita
CPS-10Q
gen2
LTE Receiver
VITA46
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FLUKE 8840a
Abstract: FIR FILTER implementation xilinx FLUKE 23 structure of clb lcd graphics display 64128 fluke 23 data sheet Xilinx counter EPF10K100A EPF10K100ARC240-3 XC4000
Text: Power Measurements: FLEX 10KA vs. XC4000 Devices T E C H N I C A L B R I E F 4 1 M A R C H 1 9 9 8 Many factors, such as supply voltage, current consumption, die size, and routing structure, affect semiconductor power consumption. For devices with the same supply voltages, the device current
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XC4000
-DB-0198-01)
M-TB-023-02)
EPF10K100,
EPF10K100A
FLUKE 8840a
FIR FILTER implementation xilinx
FLUKE 23
structure of clb
lcd graphics display 64128
fluke 23 data sheet
Xilinx counter
EPF10K100ARC240-3
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E3648
Abstract: GPIB/USB thermal simulation of IC package CG635 oscilloscope schematic EAS 200
Text: DesignCon 2008 Modeling FPGA Current Waveform and Spectrum and PDN Noise Estimation Iliya Zamek, Altera Corporation izamek@altera.com, 408-544-8116 Peter Boyle, Altera Corporation pboyle@altera.com, 408-544-6939 Zhe Li, Altera Corporation ZLI@altera.com, 408-544-7762
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CP-01042-1
E3648
GPIB/USB
thermal simulation of IC package
CG635
oscilloscope schematic EAS 200
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FLUKE 8840a
Abstract: Dual-Port RAM ep20k100 board "Dual-Port RAM" FLUKE 75 lcd graphics display 64128 Xilinx XCV150 fluke 77 EP20K100 EP20K100E
Text: Power Consumption Comparison: APEX 20K vs. Virtex Devices Technical Brief 57 October 1999, ver. 1 Introduction Altera Corporation 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com https://websupport.altera.com Many factors, such as supply voltage, current consumption, die size, and routing structure,
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XCV150,
FLUKE 8840a
Dual-Port RAM
ep20k100 board
"Dual-Port RAM"
FLUKE 75
lcd graphics display 64128
Xilinx XCV150
fluke 77
EP20K100
EP20K100E
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NELCO-4000-13
Abstract: hfss tdr HFTA-05 AN-596-1 Nelco4000-13 pcb fabrication process Nelco-4000 backplane design card fci 10Gbase-kr backplane connector
Text: AN 596: Modeling and Design Considerations for 10 Gbps Connectors AN-596-1.0 March 2010 This application note discusses the impact of backplane connectors on a 10 Gbps serial channel performance. It demonstrates how to project the connector’s impact at
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AN-596-1
NELCO-4000-13
hfss tdr
HFTA-05
Nelco4000-13
pcb fabrication process
Nelco-4000
backplane design
card fci
10Gbase-kr backplane connector
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3g call flow
Abstract: 24ghz radar sensors 180NM uwb radar ckt uwb transceiver 3g data call flow 802.11n transceiver sensor radar uwb uwb radar uwb radar sensor
Text: Foundry Solutions IBM and Cadence collaborate to accelerate silicon-accurate design of advanced RF integrated circuits. frequencies and smaller process Highlights geometries of integrated wireless designs produce additional parasitic Wireless explosion drives demand
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Untitled
Abstract: No abstract text available
Text: RapidIO Gen 2 System Modeling Tool Product Brief Tool Overview and Benefits • IDT® RapidIO Tool for proactively architect embedded systems networks using RapidIO Analyze traffic under different network loading scenarios in advance of
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efuse OTP
Abstract: schematic diagram of bluetooth receiver FUJITSU single mosfet FUJITSU mosfet efuse rf sampler bluetooth transceiver MOSFET 90nm
Text: RFCMOS Case Study: Orca Systems’ 1st-pass Functional Silicon Success with Fujitsu CMOS 90nm Technology “When you’re designing a new type of digital architecture, it’s vital to know that final silicon will match simulation results. The results we got with Fujitsu’s 90nm PDK are
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SMS-CS-21356-12/2009.
efuse OTP
schematic diagram of bluetooth receiver
FUJITSU single mosfet
FUJITSU mosfet
efuse
rf sampler
bluetooth transceiver
MOSFET 90nm
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SPICE model for UC3844
Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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BR1522/D
Aug-2000
r14525
BR1522/D
SPICE model for UC3844
UC3843 spice model
tl494 spice model
EB407 Basic Halogen Converter
MTP2N10
180V - 240V igbt dimmer
UC3845 pspice model
mosfet cross reference
spice model moc3061
uc3843 flyback supply opto-coupler
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bt 2323
Abstract: code for sms sending using pic midi keyboard yamaha midi keyboard midi keyboard interface midi sound generator block ifft TMS320C32 sms pic Split-Radix
Text: Implementing Real-Time MIDI Music Synthesis Algorithms, ABS/OLA, and SMS for the TMS320C32 DSP APPLICATION REPORT: SPRA355 Authors: Susan Yim yim@hc.ti.com Yinong Ding (ding@hc.ti.com) E.Bryan George (george@hc.ti.com) DSP Research and Development Center
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TMS320C32
SPRA355
TMS320C3x
TMS320C30"
TMS320
TMS320C32"
bt 2323
code for sms sending using pic
midi keyboard
yamaha midi keyboard
midi keyboard interface
midi sound generator
block ifft
sms pic
Split-Radix
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tn0008
Abstract: mobile ddr2 TN-00-08 micron BGA SDRAM
Text: TN-00-08: Thermal Applications Introduction Technical Note Thermal Applications Introduction This technical note defines a general method and the criteria for measuring and ensuring that Micron memory components and modules do not exceed the maximum allowable temperature. The specified temperatures will help ensure the reliability and
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TN-00-08:
09005aef805ec8a5/S
09005aef805ec8b1
TN0008
mobile ddr2
TN-00-08
micron BGA SDRAM
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SPRA355
Abstract: pic midi Split-Radix TMS320 TMS320C30 TMS320C32 TMS320C3X MIDI WAVETABLE DSP yamaha ic code for sms sending using pic
Text: Implementing Real-Time MIDI Music Synthesis Algorithms, ABS/OLA, and SMS for the TMS320C32 DSP APPLICATION REPORT: SPRA355 Authors: Susan Yim yim@hc.ti.com Yinong Ding (ding@hc.ti.com) E.Bryan George (george@hc.ti.com) DSP Research and Development Center
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TMS320C32
SPRA355
TMS320C3x
TMS320C30"
TMS320
TMS320C32"
SPRA355
pic midi
Split-Radix
TMS320C30
MIDI WAVETABLE DSP
yamaha ic
code for sms sending using pic
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Fast Analytical Modeling of Dynamic Thermal Behavior of Semiconductor Devices and Circuits
Abstract: 1033A1
Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 4, APRIL 2014 1031 Fast Analytical Modeling of Dynamic Thermal Behavior of Semiconductor Devices and Circuits Kai H. Kwok, Senior Member, IEEE, and Vincenzo d’Alessandro Abstract— This paper presents a set of closed-form analytical
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MTTF Intel
Abstract: No abstract text available
Text: Manufacturing Operations System Design and Analysis C. Hilton Manufacturing Strategic Support Technology and Manufacturing Engineering, Intel Corp. Index words: factory, manufacturing, discrete-event, simulation, modeling Abstract This paper describes manufacturing operations design
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Will CMOS Amplifiers Ever Kick-GaAs?
Abstract: wireless communication paper presentation
Text: Will CMOS Amplifiers Ever Kick-GaAs? Invited P.J. Zampardi Skyworks Solutions, Inc Abstract- In this paper, we present a discussion and comparison of CMOS and GaAs HBT technologies for handset power amplifiers. Our perspective is unique to other comparisons in
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700-MHz
2007-Jan.
Will CMOS Amplifiers Ever Kick-GaAs?
wireless communication paper presentation
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Willamette
Abstract: project transistor tester
Text: Intel Technology Journal Q199 Defect-Based Test: A Key Enabler for Successful Migration to Structural Test Sanjay Sengupta, MPG Test Technology, Intel Corp. Sandip Kundu, MPG Test Technology, Intel Corp. Sreejit Chakravarty, MPG Test Technology, Intel Corp.
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Willamette
project transistor tester
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tsi578
Abstract: backplane cps-16 Tsi577 Tsi572 CPS-6Q Tsi574 sonar block diagram CPRI wireless switch diagram lte reference design
Text: semiconductor solutions IDT RapidIO 1.3 Switch Portfolio ® Serial RapidIO solutions from Integrated Device Technology, Inc. increase performance, reduce power consumption, and lower design costs. ® RapidIO® Overview • Forward compatible with RapidIO Gen2
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tsi578
backplane cps-16
Tsi577
Tsi572
CPS-6Q
Tsi574
sonar block diagram
CPRI
wireless switch diagram
lte reference design
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Untitled
Abstract: No abstract text available
Text: World Leader in ASICs • GEC P lessey Semiconductors GPS has one of the w idest ranges of state-of-the-art technologies in the world. Add global manufacturing, design and customer service centres, and you can see why we deliver fast and cost effective solutions
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OCR Scan
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I160M
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PC5004
Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz
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55-micron
PC5004
VGC650
VGC6P52
VGC600
IN01D1
NR02D1
QFP 128 bonding
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