Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module.
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IGBT-SP-10004
MBN800H45E2-H
000cycles)
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MBN1200H45
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.
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IGBT-SP-08007
MBN1200H45E2
000cycles)
MBN1200H45
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES Low conduction loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability.
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IGBT-SP-08007
MBN1200H45E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09017 R8 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability.
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IGBT-SP-09017
MBN1200H45E2-H
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03012
MBN800E33D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06028 R3 MBN1200H33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-06028
MBN1200H33D
000cycles)
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AN4502
Abstract: AN4503 AN4505 AN4506 GP400DDS12
Text: GP400DDS12 GP400DDS12 Powerline N-Channel Dual Switch IGBT Module DS5341-1.1 February 2000 The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage applications
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GP400DDS12
DS5341-1
GP400DDS12
AN4502
AN4503
AN4505
AN4506
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DS51721
Abstract: bipolar transistor td tr ts tf
Text: GP800DDS12-ABC GP800DDS12-ABC Powerline N-Channel IGBT Module DS5172-1.2 May 1999 The GP800DDS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage
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GP800DDS12-ABC
DS5172-1
GP800DDS12-ABC
DS51721
bipolar transistor td tr ts tf
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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IGBT-SP-03012
MBN800E33D
000cycles)
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MBN1200H33D
Abstract: 06028
Text: IGBT MODULE Spec.No.IGBT-SP-06028 R2 P1/9 MBN1200H33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-06028
MBN1200H33D
000cycles)
MBN1200H33D
06028
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MBN800E33D
Abstract: MBN800
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R4 P1 MBN800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03012
MBN800E33D
000cycles)
MBN800E33D
MBN800
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fuji igbt module
Abstract: No abstract text available
Text: P011.02 TM Dual channel low cost gate driver board for PrimePACK IGBT module General description Features • Ready to use gate driver board for PrimePACK TM • Suitable for PrimePACK TM TM 2 and PrimePACK IGBT module 3 IGBT module • Suitable for chopper, two- and multi-level inverter topologies
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Enderstrasse94,
fuji igbt module
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eupec igbt
Abstract: Eupec Power Semiconductors
Text: MARKETING NEWS from Europe for the World European PowerSemiconductor and Electronics Company Introduction of a typical module lead resistance and chip-related on-state characteristics in the data sheets Typical module lead resistance Effective now all data sheets released for new module types will include a value for the lead
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Untitled
Abstract: No abstract text available
Text: MARKETING NEWS from Europe for the World European PowerSemiconductor and Electronics Company Introduction of a typical module lead resistance and chip-related on-state characteristics in the data sheets Typical module lead resistance Effective now all data sheets released for new module types will include a value for the lead
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BSM150GXL120DN2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXL 120 DN2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM150GXR120DN2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM150GXR120DN2
BSM150GXR120DN2
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R1200
Abstract: No abstract text available
Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module
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OCR Scan
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R1200
FFrtOR12COKFf>
34032T?
D002D45
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PDF
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Untitled
Abstract: No abstract text available
Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module
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OCR Scan
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R1200
FFrtOR12COKFf>
34032T?
D002D45
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PDF
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Untitled
Abstract: No abstract text available
Text: FF 50 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,25 DC, pro Baustein / per module RthJC 0,50 DC, pro Baustein / per module 0,06 pro Baustein / per module RthCK 0,12 pro Baustein / per module Transistor Transistor Elektrische Eigenschaften Electrical properties
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OCR Scan
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3MD3217
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PDF
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300R06
Abstract: No abstract text available
Text: FF 300 R 06 KL 2 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,05 DC, pro Baustein / per module 0,1 pro Baustein / per module 0,03 R th C K 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values
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kme-3 baustein
Abstract: No abstract text available
Text: FF 300 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Maximum rated values Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0 ,0 5 RthJC DC, pro Baustein / per module 0 ,1 pro Baustein / per module
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Untitled
Abstract: No abstract text available
Text: FF 150 R 06 KL 2 Therm al properties Therm ische Eigenschaften 0,09 Rthjc DC, pro Baustein /p e r module DC, pro Baustein / per module 0,18 0,03 RthCK pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties
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OCR Scan
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125-C
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M HPM 7B 25A 120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A25S120DC3)
MHPM7B25A120B
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150-12SE
Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Text: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT
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93IXYS
iibflb22b
150-12SE
VIE150-12SE
POB1180;
D68619
VIE150-12S
FIB5
IXYS IGBT 3kv
igbt inverter circuit for induction heating
Induction Heating Resonant Inverter
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