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    Untitled

    Abstract: No abstract text available
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


    Original     		PDF SO692 OT-23 SO642 OT-23

    transistor P39

    Abstract: small signal pnp SO642 SO692 4032C OC310
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


    Original     		PDF SO692 OT-23 SO642 OT-23 transistor P39 small signal pnp SO642 SO692 4032C OC310

    transistor P39

    Abstract: No abstract text available
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB


    Original     		PDF SO692 SO642 OT-23 transistor P39

    SO692

    Abstract: so692 equivalent SO642 transistor P39
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking SO 692 P39 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER NPN COMPLEMENT IS SO642 2


    Original     		PDF SO692 SO642 OT-23 SO692 so692 equivalent SO642 transistor P39

    transistor P39

    Abstract: No abstract text available
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642


    Original     		PDF SO692 OT-23 SO642 OT-23 transistor P39

    P31 SOT223

    Abstract: BSP31 BSP33 BSP41 BSP43 transistors sot-223
    Text: BSP31 BSP33 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BSP31 P31 BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE


    Original     		PDF BSP31 BSP33 OT-223 BSP41 BSP43 OT-223 P31 SOT223 BSP31 BSP33 transistors sot-223

    sot-23 marking p33

    Abstract: S05401 SO5401
    Text: SO5401 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF SO5401 OT-23 sot-23 marking p33 S05401 SO5401

    transistor P39

    Abstract: SO642 SO692 4032C
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


    Original     		PDF SO692 OT-23 SO642 OT-23 -300icroelectronics. transistor P39 SO642 SO692 4032C

    so5400

    Abstract: No abstract text available
    Text: SO5400 SO5401 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking SO5400 P32 SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER NPN COMPLEMENTS ARE SO5550 AND


    Original     		PDF SO5400 SO5401 SO5550 SO5551 OT-23 SO5401

    transistor P39

    Abstract: No abstract text available
    Text: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s


    Original     		PDF SO692 OT-23 SO642 OT-23 transistor P39

    P3020L

    Abstract: STP3020L P3020
    Text: STP3020L  N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID ST P3020L 30 V < 0.022 Ω 40 A • ■ ■ TYPICAL RDS(on) = 0.019 Ω LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of


    Original     		PDF STP3020L O-220 P3020L 100oC P3020L STP3020L P3020

    P3NB100

    Abstract: P3NB10 P3NB100FP STP3NB100 STP3NB100FP
    Text: STP3NB100 STP3NB100FP N - CHANNEL 1000V - 5.3 Ω - 3 A - TO-220/TO-220FP PowerMESH MOSFET TARGET DATA TYPE V DSS R DS on ID ST P3NB100 ST P3NB100FP 1000 V 1000 V < 6Ω < 6Ω 3 A 3 A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP3NB100 STP3NB100FP O-220/TO-220FP P3NB100 P3NB100FP P3NB100 P3NB10 P3NB100FP STP3NB100 STP3NB100FP

    p30ne06

    Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
    Text: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω


    Original     		PDF STP30NE06 STP30NE06FP O-220/TO-220FP P30NE06 P30NE06FP 175oC p30ne06 STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220

    P3NB80

    Abstract: P3NB80FP STP3NB80 STP3NB80FP 06-50NS
    Text: STP3NB80 STP3NB80FP  N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P3NB80 ST P3NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A(ùù) TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP3NB80 STP3NB80FP O-220/TO-220FP P3NB80 P3NB80FP P3NB80 P3NB80FP STP3NB80 STP3NB80FP 06-50NS

    P3NB80FP

    Abstract: P3NB80 p3nb C650A STP3NB80 STP3NB80FP
    Text: STP3NB80 STP3NB80FP  N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P3NB80 ST P3NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP3NB80 STP3NB80FP O-220/TO-220FP P3NB80 P3NB80FP P3NB80FP P3NB80 p3nb C650A STP3NB80 STP3NB80FP

    STP36NE06

    Abstract: p36ne06fp P36NE06 p36ne06f p36ne morocco p36ne06fp 14A144 IDO24 p36ne0 STripFET
    Text: STP36NE06 STP36NE06FP  N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID ST P36NE06 ST P36NE06FP 60 V 60 V < 0.040 Ω < 0.040 Ω 36 A 20 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STP36NE06 STP36NE06FP O-220/TO-220FP P36NE06 P36NE06FP O-220 STP36NE06 p36ne06fp P36NE06 p36ne06f p36ne morocco p36ne06fp 14A144 IDO24 p36ne0 STripFET

    n mosfet depletion pspice model parameters

    Abstract: P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6
    Text: STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP38N06 P38N06 100oC 175oC O-220 n mosfet depletion pspice model parameters P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6

    R245

    Abstract: R255 ST92R195B ST92R195C 92r195 92R195C 92R195B
    Text: AN1845 APPLICATION NOTE SUMMARY OF DIFFERENCES BETWEEN ST92R195B AND ST92R195C 1 INTRODUCTION The aim of this application note is to present a summary of the hardware and software differences between 92R195B and 92R195C products in user mode. 2 SOFTWARE DIFFERENCES


    Original     		PDF AN1845 ST92R195B ST92R195C 92R195B 92R195C 92R195B 92R195C R245 R255 ST92R195C 92r195

    STTB506B

    Abstract: No abstract text available
    Text: STTB506B -TR  TURBOSWITCHTM "B" . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM 600 V VF (max) 1.3 V trr (typ) 45 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR


    Original     		PDF STTB506B

    1B13

    Abstract: diode 400v 2A ultrafast TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE 600V Ultrafast Diode DPAK Diode SGS-Thomson stta506b SGS-Thomson mosfet ed1b
    Text: STTA506B -TR  TURBOSWITCHTM ”A” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM VF (max) 600 V 1.5 V trr (typ) 20 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR


    Original     		PDF STTA506B 1B13 diode 400v 2A ultrafast TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE 600V Ultrafast Diode DPAK Diode SGS-Thomson SGS-Thomson mosfet ed1b

    STTA506B

    Abstract: TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE diode 400v 2A ultrafast 600V Ultrafast Diode DPAK
    Text: STTA506B -TR  TURBOSWITCHTM "A" . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM 600 V VF (max) 1.5 V trr (typ) 20 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR


    Original     		PDF STTA506B TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE diode 400v 2A ultrafast 600V Ultrafast Diode DPAK

    Untitled

    Abstract: No abstract text available
    Text: STTB306B -TR  TURBOSWITCHTM ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM VF (max) 600 V 1.3 V trr (typ) 45 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION


    Original     		PDF STTB306B

    D1274

    Abstract: No abstract text available
    Text: SGS-THOMSON S D 1 2 7 4 -0 1 id ig ra o M i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • 160 MHz . 13.6 VOLTS ■ COMMON EMITTER ■ P o u t = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF


    OCR Scan     		PDF SD1274-01 1994SGS-THOMSON 0701e D1274

    diode sg 36

    Abstract: diode 400v 2A ultrafast STTB306B
    Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB306B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 3A V rrm 600 V V f (max) 1.3V trr (typ) 45 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS :


    OCR Scan     		PDF STTB306B diode sg 36 diode 400v 2A ultrafast