mosfet 1200V 40A
Abstract: ir igbt 1200V 40A STTA1212D igbt high frequency 1200V morocco p3 transistor IGBT trr TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE STTA12
Text: STTA1212D TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 12A VRRM 1200V trr typ ns VF (max) V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA1212D
O220AC
mosfet 1200V 40A
ir igbt 1200V 40A
STTA1212D
igbt high frequency 1200V
morocco p3 transistor
IGBT trr
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
STTA12
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DIODE T53
Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
Text: STTA212S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA212S
DIODE T53
transistor marking p3
SOD15
IGBT trr
igbt high frequency 1200V
STTA212S
DI 380 Transistor
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
DIODE marking ED
diode tURBOSWITCH
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morocco p3
Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12
Text: STTA2512P TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 25A VRRM 1200V trr typ 60ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA2512P
morocco p3
mosfet 1200V 40A
IGBT Transistor 1200V, 25A
mosfet 1200V 25A
ir igbt 1200V 40A
STTA2512P
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
IGBT Transistor 2.5a
transistor marking p3
transistor P1 P 12
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sod6 package
Abstract: sod6 MARKING T11 STTB106U
Text: STTB106U TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 45ns VF (max) 1.3V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING,
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STTB106U
sod6 package
sod6
MARKING T11
STTB106U
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DIODE P1
Abstract: P4 transistor STTA3006CW diode tURBOSWITCH morocco p3 transistor TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Text: STTA3006CW TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODES PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS 2 x 15A IF AV 1 VRRM 600V 2 3 trr (typ) 35ns VF (max) 1.6V FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.
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STTA3006CW
DIODE P1
P4 transistor
STTA3006CW
diode tURBOSWITCH
morocco p3 transistor
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
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STTB206S
Abstract: marking t61
Text: STTB206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 45ns VF (max) 1.3V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION
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STTB206S
STTB206S
marking t61
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SMD 8A TRANSISTOR
Abstract: Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
Text: STTA812G TURBOSWITCHTM ”A” ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K K FEATURES AND BENEFITS ULTRA-FAST, AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA812G
SMD 8A TRANSISTOR
Diode SMD ED 8A
transistor SMD 8A
TRANSISTOR 935 SMD
smd transistor 8A
fast recovery diode 1200v SMD
smd transistor ed
STTA812G
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sod6
Abstract: sod6 package transistor p2 marking MARKING P1 TRANSISTOR STTA106U marking t01 transistor marking p3 1B marking transistor transistor P1 F ed1b
Text: STTA106U TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERA -TIONS : FREEWHEEL OR BOOSTERDIODE
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STTA106U
sod6
sod6 package
transistor p2 marking
MARKING P1 TRANSISTOR
STTA106U
marking t01
transistor marking p3
1B marking transistor
transistor P1 F
ed1b
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DI 380 Transistor
Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
Text: STTA206S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA206S
DI 380 Transistor
SOD15
transistor marking p3
STTA206S
diode 400v 2A ultrafast
marking t51
transistor p2 marking
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15A POWER TRANSISTOR FOR SMPS
Abstract: STTA1512P STTA1512PI IGBT trr
Text: STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA1512P/PI
STTA1512P
STTA1512PI
15A POWER TRANSISTOR FOR SMPS
STTA1512P
STTA1512PI
IGBT trr
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schematic inductive proximity sensor
Abstract: proximity switch schematic proximity switch block diagram inductive proximity sensor transistor schematic schematic inductive sensor AN2679 BES070815 military Proximity Sensor B65933A0000X022 inductive proximity sensor schematic
Text: AN2679 Application note Smart inductive proximity switch Introduction The STEVAL-IFS006V1 inductive proximity switch demonstration board is designed based on the principle of metal body detection using the eddy current effect on the HF losses of a coil. It consists of a single transistor HF oscillator, an ST7LITEUS5 microcontroller and the
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AN2679
STEVAL-IFS006V1
TDE1708DFT
schematic inductive proximity sensor
proximity switch schematic
proximity switch block diagram
inductive proximity sensor transistor schematic
schematic inductive sensor
AN2679
BES070815
military Proximity Sensor
B65933A0000X022
inductive proximity sensor schematic
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TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Abstract: transistor C 2240
Text: STTA5012T V 1/2 TURBOS WITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
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STTA5012T
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
transistor C 2240
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RECTIFIER DIODE 5A, 2000V VRRM
Abstract: STTA512D 2000V 0,25A Ultrafast RECOVERY Diode ISOWATT220AC STTA512F 102c marking IGBT 2000V .50A
Text: STTA512D/F TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA IF AV 5A VRRM 1200V trr (typ) 45ns VF (max) 2.0V K A MAIN PRODUCTS CHARACTERISTICS FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA512D/F
O220AC
ISOWATT220AC
STTA512D
STTA512F
RECTIFIER DIODE 5A, 2000V VRRM
STTA512D
2000V 0,25A Ultrafast RECOVERY Diode
ISOWATT220AC
STTA512F
102c marking
IGBT 2000V .50A
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STTA812DI
Abstract: tb 411 STTA812D high power fast recovery diodes 5 ns
Text: STTA812D I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A MAIN PRODUCTS CHARACTERISTICS FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA812D
O220AC
STTA812D
STTA812DI
STTA812DI
tb 411
high power fast recovery diodes 5 ns
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Diode SGS-Thomson
Abstract: SGS-Thomson mosfet TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Text: r z T SGS-THOMSON ^7# K TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V trr (typ) ns Vf (max) PRELIMINARY DATA V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. . VERY LOW OVERALL POWER LOSSES IN
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mosfet 1200V 25A
Abstract: No abstract text available
Text: r z T SGS-THOMSON ^ 7 # K TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f av 25A V rrm 1200V trr (typ) 60ns Vf PRELIMINARY DATA 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. . VERY LOW OVERALL POWER LOSSES IN
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STTA106U
Abstract: No abstract text available
Text: rZ Z SCS-THOMSON ^ 7# liainieiataigHEC T ia M n o STTA 106U TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If<av 1A V rrm 600V trr typ) 20ns V f (max) 1.5V PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE" OPERA
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Untitled
Abstract: No abstract text available
Text: STTA 1212D TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V trr (typ) 50 ns Vf 2.0 V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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1212D
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ST DIODE T03
Abstract: STTA112U
Text: STTA112U TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 1A V rrm 1200V tir Vf (typ) 65ns (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION
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STTA112U
ST DIODE T03
STTA112U
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Untitled
Abstract: No abstract text available
Text: STTA2512P TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V trr (typ) 60ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA2512P
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mosfet morocco
Abstract: ad 152 transistor
Text: f Z T SGS-THOMSON ^ 7# M C ^ < m iO T s M K S T T A 8 1 2 D (I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 8A V rrm 1200V trr (typ) 50ns Vf (max) 2.0V PRELIMINARY DATA kH 4 - V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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smd transistor 2p data
Abstract: diode 500A 1200v smd transistor JJ
Text: rz T ^7# SGS-THOMSON M »iLiOT(s iOOS TURBOSWITCH ”A” STTA812G ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 8A V rrm 1200V (typ) 50ns (max) 2.0V trr Vf PRELIMINAY DATASHEET a -H -k FEATURES AND BENEFITS • ULTRA-FAST, AND NOISE-FREE RECOVERY.
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STTA812G
smd transistor 2p data
diode 500A 1200v
smd transistor JJ
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Untitled
Abstract: No abstract text available
Text: STTA5012TV1/2 TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 25A I f a v V 1200V rrm 60ns trr (typ) V f STTA5012TV1 STTA5012TV2 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN
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STTA5012TV1/2
STTA5012TV1
STTA5012TV2
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Untitled
Abstract: No abstract text available
Text: rz ^ T SGS-THOMSON 7# M ûœ ËŒ O T «® S T T A 1 5 1 2 P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf (max) PRELIMINARY DATA V 1.9V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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STTA1512P
STTA1512PI
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