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    MOS 20V 0.5A Search Results

    MOS 20V 0.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 20V 0.5A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSI2007

    Abstract: MosFET
    Text: SSI2007 N-Ch: 0.8A, 20V, RDS ON 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-563 DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field


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    SSI2007 OT-563 SSI2007 17-Dec-2013 MosFET PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE PRODUCTS UMT3 RTU002P02 1.TYPE RTU002P02 2.STRUCTURE SILICON P-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS PAGE 1/3 [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS ・・・ -20V GATE-SOURCE VOLTAGE VGSS ・・・ ±12V DRAIN CURRENT


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    RTU002P02 TSZ22111ï TSQ03025H-126 RTU002P02. PDF

    TUMT6

    Abstract: TSQ03125-US6J2 TSZ22111
    Text: TYPE PRODUCTS TUMT6 1.TYPE PAGE US6J2 1/4 US6J2 2.STRUCTURE 3.APPLICATIONS SILICON P-CHANNEL MOS FET SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 IT IS THE SAME RATINGS FOR THE Tr1 AND Tr2. 》 ・・・ -20V DRAIN-SOURCE VOLTAGE VDSS GATE-SOURCE VOLTAGE


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    150oC -55150oC TSQ03125-US6J2 TSZ2211104 TUMT6 TSQ03125-US6J2 TSZ22111 PDF

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM5H1072A-S •概要 ■特長 ELM5H1072A-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=0.7A Vgs=2.5V ・ Rds(on) < 360mΩ (Vgs=4.5V)


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    ELM5H1072A-S AFN1072 PDF

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    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM5E400PA-S •概要 ■特長 ELM5E400PA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V)


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    ELM5E400PA-S AFN1012 PDF

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    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM5E401PA-S •概要 ■特長 ELM5E401PA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-0.7A ・ Rds on = 620mΩ (Vgs=-4.5V) ・ Rds(on) = 860mΩ (Vgs=-2.5V)


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    ELM5E401PA-S 1450mÎ AFP1013 PDF

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    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM5E402PA-S •概要 ■特長 ELM5E402PA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V)


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    ELM5E402PA-S AFN1012E PDF

    TN0702N3

    Abstract: TN0702
    Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven


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    TN0702 TN0702N3 500mA 200pF TN0702N3 TN0702 PDF

    TN0702N3

    Abstract: TN0702 TN0702ND
    Text: TN0702 TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON ID(ON) VGS(th) Order Number / Package BVDGS (max) (min) (max) TO-92 DICE† 20V 1.3Ω 0.5A 1.0V TN0702N3 TN0702ND †MIL visual screening available


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    TN0702 TN0702N3 TN0702ND 200pF 500mA TN0702N3 TN0702 TN0702ND PDF

    TN0702

    Abstract: TN0702N3 TN0702ND
    Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON ID(ON) VGS(th) Order Number / Package BVDGS (max) (min) (max) TO-92 Die† 20V 1.3Ω 0.5A 1.0V TN0702N3 TN0702ND †MIL visual screening available Features


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    TN0702 TN0702N3 TN0702ND 500mA 200pF TN0702 TN0702N3 TN0702ND PDF

    TN0702N3

    Abstract: TN0702
    Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 Features Low Threshold DMOS Technology ❏ Low threshold — 1.0 volt max


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    TN0702 TN0702N3 200pF TN0702N3 TN0702 PDF

    VP1504

    Abstract: VP1506NW VP1509NW
    Text: VP1504/VP1506/VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -40V 8.0Ω -0.5A VP1504NW -60V 8.0Ω -0.5A VP1506NW -90V 8.0Ω -0.5A VP1509NW Die† † MIL visual screening available.


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    VP1504/VP1506/VP1509 VP1504NW VP1506NW VP1509NW VP1504 VP1506NW VP1509NW PDF

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    Abstract: No abstract text available
    Text: Supertex inc. VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -90V 8.0Ω -0.5A VP1509NW Die† † MIL visual screening available. Features Advanced DMOS Technology ❏ Free from secondary breakdown


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    VP1509 VP1509NW VP1509 PDF

    VP1506

    Abstract: VP1506NW VP1509 VP1509NW
    Text: VP1506 VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -60V 8.0Ω -0.5A VP1506NW -90V 8.0Ω -0.5A VP1509NW Die† † MIL visual screening available. Features Advanced DMOS Technology


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    VP1506 VP1509 VP1506NW VP1509NW VP1506 VP1506NW VP1509 VP1509NW PDF

    Untitled

    Abstract: No abstract text available
    Text: t ìi S u p e rte x TN07L m e . L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information t b v dss/ R d S ON *D(ON) BVdgs (max) (min) VGSflh) (max) 20V i. 3 n 0.5A 1.0 V Order Number / Package TO-92 DICE* TN0702N3 TN0702ND


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    TN07L TN0702N3 TN0702ND 200mA 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TN0702 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) ^G S(th) b v dgs (max) (min) (max) TO-92 20V 1.3ß 0.5A 1.0V TN0702N3 Features Low Threshold DMOS Technology


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    TN0702 TN0702N3 130pF PDF

    Untitled

    Abstract: No abstract text available
    Text: TN0702 h js L . - N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) TO-92 DICE* 20V 1.3Q 0.5A 1.0V TN0702N3 TN0702ND 1"MII_visual screening available WÂ Features


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    TN0702 TN0702N3 TN0702ND 125cC PDF

    bss123 marking sa

    Abstract: No abstract text available
    Text: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code


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    BSS123 O-236AB* O-236AB: bss123 marking sa PDF

    VN1304N3

    Abstract: VN1310N3
    Text: inc. V N 13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV Dss / R d S ON ' d (ON) BVdgs (max) (min) TO-39 TO-92 40V 8£2 0.5A VN1304N2 VN1304N3 60V 8£2 0.5A VN1306N2 VN1306N3 100V


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    VN1304N2 VN1306N2 VN1310N2 VN1304N3 VN1306N3 VN1310N3 VN13A VN1310N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code


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    BSS123 O-236AB: O-236AB* PDF

    VP2110N3

    Abstract: VP21A vp2104
    Text: VP21A inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices II Order Number / Package BV DSS/ R d S O N BV dgs (max) TO-92 DICE+ -40V 12Î2 -0.5A VP2104N3 VP2104ND -60V 12 £! -0.5A VP2106N3 VP2106ND -100V 12Q


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    VP21A -100V VP2104N3 VP2106N3 VP2110N3 VP2104ND VP2106ND VP2110ND VP21A vp2104 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc. VN0645 VN0650 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R DS 0N BVdgs (max) 450V 16Q 500V 16Q i l b v dss/ Order Number / Package TO-39 TO-92 TO-220 Dice+ 0.5A VN0645N2 VN0645N3 VN0645N5 VN0645ND 0.5A VN0650N2 VN0650N3


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    VN0645 VN0650 O-220 VN0645N2 VN0645N3 VN0645N5 VN0645ND VN0650N2 VN0650N3 VN0650N5 PDF

    SOT-23 Product Code bss123

    Abstract: DSS SOT23 marking 9a sot-23
    Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code


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    OT-23 BSS123 OT-23: SOT-23 Product Code bss123 DSS SOT23 marking 9a sot-23 PDF

    VP2110N3

    Abstract: No abstract text available
    Text: SUPERTEX INC blE D • 87732^ DDD32bS ÌSfl « S T X Super te x inc. VP21A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / BVdos Rd8 ON (max) If Standard Commercial Devices Order Number / Package TO-92 DICE* -40V 120 -0.5A VP2104N3


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    DDD32bS VP21A -100V VP2104N3 VP2106N3 VP2110N3 VP2104ND VP2106ND VP2110ND 00032bfl PDF