HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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QS6M4
Abstract: TSMT6 Pch MOS FET m04 fet
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.
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nec d 1590
Abstract: D134 NP45N06 MP-25 NP45N06CLC NP45N06DLC NP45N06ELC
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP45N06CLC, NP45N06DLC, NP45N06ELC SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP45N06CLC,
NP45N06DLC,
NP45N06ELC
O-262
O-220AB
NP45N06DLC
NP45N06CLC
O-263
O-220AB)
nec d 1590
D134
NP45N06
MP-25
NP45N06CLC
NP45N06DLC
NP45N06ELC
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NP24N10CLB
Abstract: MP-25 NP24N10DLB NP24N10ELB
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N10CLB, NP24N10DLB, NP24N10ELB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP24N10CLB,
NP24N10DLB,
NP24N10ELB
O-262
O-220AB
NP24N10DLB
NP24N10CLB
O-263
O-220AB)
NP24N10CLB
MP-25
NP24N10DLB
NP24N10ELB
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MP-25
Abstract: NP55N10CLD NP55N10DLD NP55N10ELD
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N10CLD, NP55N10DLD, NP55N10ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP55N10CLD,
NP55N10DLD,
NP55N10ELD
O-262
O-220AB
NP55N10DLD
NP55N10CLD
O-263
MP-25
NP55N10CLD
NP55N10DLD
NP55N10ELD
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diode 348
Abstract: 9840 diode APT50M50L2LL 085mh
Text: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses
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APT50M50L2LL
O-264
O-264
diode 348
9840 diode
APT50M50L2LL
085mh
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D1804
Abstract: 70n10 70n10 data sheet NEC 70N10 NP70N10KUF NP70N10KUF-E2-AZ code marking NEC NP70N10KUF-E1-AZ NEC+70N10
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N10KUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N10KUF-E1-AZ NP70N10KUF-E2-AZ
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NP70N10KUF
NP70N10KUF
NP70N10KUF-E1-AZ
NP70N10KUF-E2-AZ
O-263)
O-263
MP-25ZK)
D1804
70n10
70n10 data sheet
NEC 70N10
NP70N10KUF-E2-AZ
code marking NEC
NP70N10KUF-E1-AZ
NEC+70N10
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d1941
Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note
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2SK4144
2SK4144
2SK4144-AZ
2SK4144-S12-AZ
O-220
d1941
K4144
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
transistor K4144
ke marking transistor
P300
2SK41
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2715GR is P-Channel MOS FET designed for power management applications of notebook computers and Li-ion battery protection circuit.
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PA2715GR
PA2715GR
PA2715GR-E1-ANote
PA2715GR-E2-ANote
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2SK3899
Abstract: 2SK3899-ZK 2SK38 D1717
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK
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2SK3899
2SK3899
2SK3899-ZK
O-263
MP-25ZK)
O-263)
2SK3899-ZK
2SK38
D1717
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M52 datasheet
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
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PA2711GR
PA2711GR
10ems,
M52 datasheet
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a2794
Abstract: PA2794AGR PA2794
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2794AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2794AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1
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PA2794AGR
PA2794AGR
M8E0904E
a2794
PA2794
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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2SK3574
Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current
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2SK3574
2SK3574
O-220AB
2SK3574-S
O-262
2SK3574-ZK
O-263
2SK3574-Z
O-220SMDNote
2SK3574-S
2SK3574-Z
2SK3574-ZK
MP-25
MP-25Z
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2SK3574-ZK
Abstract: 2SK3574 2SK3574-S 2SK3574-Z MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current
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2SK3574
2SK3574
O-220AB
2SK3574-S
O-262
2SK3574-ZK
O-263
2SK3574-Z
O-220SMDNote
2SK3574-ZK
2SK3574-S
2SK3574-Z
MP-25
MP-25Z
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PA2794GR
Abstract: PA2794GR-E1-AZ a2794 transistor M22 marking
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2794GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2794GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1
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PA2794GR
PA2794GR
PA2794GR-E1-AZ
a2794
transistor M22 marking
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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2SK2131
Abstract: MEI-1202 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR À 2SK2131 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2131 is N-channel MOS Field Effect Transistor in millimeters designed for solenoid, motor and lamp driver. FEATURES
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2SK2131
IEI-1209)
MEI-1202
TEA-1035
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2SK1990
Abstract: 2SK1991 TC2-450 MEI-1202 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1990/2SK1991 is N-channel MOS Field Effect Tran PACKAGE DIMENSIONS in millim eters sistor designed for high voltage switching applications.
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2SK1990/2SK1991
IEI-1209)
2SK1990
2SK1991
TC2-450
MEI-1202
TEA-1035
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NEC 12E
Abstract: 2SJ303 MEI-1202 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR NEC ^•SBSE 2SJ303 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ303 is P-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for solenoid, motor and lamp driver.
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2SJ303
T0-220
IEI-1209)
NEC 12E
MEI-1202
TEA-1035
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