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    MOS FET 375 Search Results

    MOS FET 375 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET 375 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XP132A01A0SR

    Abstract: No abstract text available
    Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state


    Original     		XP132A01A0SR XP132A01A0SR PDF

    grm708

    Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537 PDF

    TRANSISTOR D 1785

    Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w PDF

    DIODE GP 704

    Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet PDF

    mosfet K 2865

    Abstract: 4814 mosfet BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR


    Original     		BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate PDF

    transistor+SMD+12W+MOSFET

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET PDF

    transistor D 1666

    Abstract: transistor 801 diagrams
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05


    Original     		RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) Oct2011 transistor D 1666 transistor 801 diagrams PDF

    BF992

    Abstract: bf992 application Silicon N-Channel Dual Gate MOS-FET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BF992 Silicon N-channel dual gate MOS-FET Product specification Supersedes data of 1996 Jul 30 1999 Aug 11 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET APPLICATIONS BF992 PINNING


    Original     		M3D071 BF992 OT143B 125004/03/pp12 BF992 bf992 application Silicon N-Channel Dual Gate MOS-FET PDF

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480 PDF

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3338-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05


    Original     		RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) PDF

    BF1203

    Abstract: FET MARKING CODE 8203 dual mosfet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original     		MBD128 BF1203 OT363 613512/03/pp20 BF1203 FET MARKING CODE 8203 dual mosfet PDF

    2SK3338-01

    Abstract: L356
    Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3338-01 2SK3338-01 L356 PDF

    9033 transistor

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original     		MBD128 BF1203 OT363 613512/02/pp20 9033 transistor BF1203 PDF

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758 PDF

    MARKING 5F SOT363

    Abstract: BF1204 FET MARKING CODE km 1667
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


    Original     		MBD128 BF1204 OT363 613512/02/pp12 MARKING 5F SOT363 BF1204 FET MARKING CODE km 1667 PDF

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112 PDF

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK


    Original     		RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) PDF

    BF989

    Abstract: MOSFET 4466 BP317 SCA52 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		BF989 OT143 SCA52 117061/00/02/pp8 BF989 MOSFET 4466 BP317 SCA52 dual-gate PDF

    BF990A

    Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate PDF

    CP Clare RELAY

    Abstract: triac control 8-pin Solid State Switches LCC Triac PLA power relay Clare Relay scr 1A fet mos triac catalog triac control 16 pin
    Text: Clare°ofeafeifi] Chart Solid State Switches AC POWER SWITCHES SPECIALTYi pro ducts! 1A, 2A MOS FET 400 .250 7 2 1 3750 YES ULBABT 6 PIN, 8 PIN XCA 1A MOS FET 300 .100 25 5 1 3750 YES UL, BABT 6 PIN, 8 PIN OMA 1A, 2A MOS FET 300 .100 25 10 2 1500 YES UL.BABT


    OCR Scan     		SSP15 CP Clare RELAY triac control 8-pin Solid State Switches LCC Triac PLA power relay Clare Relay scr 1A fet mos triac catalog triac control 16 pin PDF

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan     		BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet PDF