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    MOS MARKING CODE Search Results

    MOS MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    700V mos

    Abstract: No abstract text available
    Text: MOS reduced size metal oxide power type leaded resistor features • Coated with UL94V-0 flameproof material • Suitable for automatic machine insertion • Marking: Pink body color with color-coded bands or alpha-numeric black marking dimensions and construction


    Original     		UL94V-0 300ppm/ 20ppm/v 700V mos PDF

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D PDF

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor PDF

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L PDF

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363 PDF

    FC654601

    Abstract: FET MARKING CODE FET MARKING
    Text: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		FC654601 FC654601 FET MARKING CODE FET MARKING PDF

    Mos MARKING CODE

    Abstract: No abstract text available
    Text: POWER TYPE RESISTORS Metal oxide SMALL TYPE MOS • MOSX STRUCTURE Ceramic core MOS = trimmed metal oxide MOSX = trimmed metal film Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant insulation coating Marking POWER TYPE RESISTORS 1 2 3 4


    Original     		D-25578 Mos MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER TYPE RESISTORS Metal oxide SMALL TYPE MOS • MOSX STRUCTURE POWER TYPE RESISTORS 1 2 3 4 5 6 7 Ceramic core MOS = trimmed metal oxide MOSX = trimmed metal film Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant insulation coating Marking


    Original     		D-25578 PDF

    fl6l5201

    Abstract: No abstract text available
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		FL6L5201 fl6l5201 PDF

    TRANSISTOR SMD CODE 6.8

    Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
    Text: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5


    Original     		SPPX2N60S5 SPBX2N60S5 X2N60S5 P-TO220-3-1 P-TO263-3-2 21/Oct/1998 TRANSISTOR SMD CODE 6.8 tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5 PDF

    DIODE smd marking Ag

    Abstract: MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs
    Text: SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPUX6N60S5


    Original     		SPUX6N60S5 SPDX6N60S5 X6N60S5 P-TO251-3-1 P-TO252 21/Oct/1998 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs PDF

    FET MARKING CODE

    Abstract: FL6L5201
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		FL6L5201 FET MARKING CODE FL6L5201 PDF

    FL6L5203

    Abstract: FET MARKING CODE
    Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original     		FL6L5203 FL6L5203 FET MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original     		FL6L5203 PDF

    Q67040-S4440

    Abstract: 11N80C3 11N8
    Text: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking


    Original     		SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 Q67040-S4440 11N80C3 11N8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)


    Original     		TT4-EA-14462 SK8603160L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14213 Revision. 3 Product Standards MOS FET SK8603150L SK8603150L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 15 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 2.5 m  (VGS = 4.5 V)


    Original     		TT4-EA-14213 SK8603150L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 19 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 10 m  (VGS = 4.5 V)


    Original     		TT4-EA-14211 SK8603190L UL-94 12easures PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14480 Revision. 2 Product Standards MOS FET SK8603170L SK8603170L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 17 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.9 m  (VGS = 4.5 V)


    Original     		TT4-EA-14480 SK8603170L UL-94 20easures PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 14 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 1.8 m  (VGS = 4.5 V)


    Original     		TT4-EA-14461 SK8603140L UL-94 PDF

    bf544

    Abstract: siemens fet to92 700M
    Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F1231 eht07043 eht07044 EHM07002 fl23SbDS 0Qbb777 bf544 siemens fet to92 700M PDF

    MARKING CODE 21S

    Abstract: 12NA50
    Text: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped


    OCR Scan     		Q62702-F1230 OT-23 MARKING CODE 21S 12NA50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F1372 OT-23 EHT07032 300MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • /dss = 4 mA, g is = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F1372 OT-23 EHM07Ã 1B1L75 PDF