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    MOS MEMORY Search Results

    MOS MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D3232 Rochester Electronics LLC IC,MISC MEMORY,MOS,DIP,24PIN,CERAMIC Visit Rochester Electronics LLC Buy
    2102-1N Rochester Electronics LLC 2102 - Standard SRAM, 1KX1, 500ns, MOS, PDIP16 Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOS MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM6287HL-35

    Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
    Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM


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    MOS Clock Driver

    Abstract: No abstract text available
    Text: DS3245 Quad MOS Clock Driver General Description Features The DS3245 is a quad bipolar-to-MOS clock driver with TTL compatible inputs It is designed to provide high output current and voltage capabilities necessary for optimum driving of high capacitance N-channel MOS memory systems


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    PDF DS3245 DS3245J MOS Clock Driver

    C1995

    Abstract: DS3245 DS3245J DS3245N J16A N16A
    Text: DS3245 Quad MOS Clock Driver General Description Features The DS3245 is a quad bipolar-to-MOS clock driver with TTL compatible inputs It is designed to provide high output current and voltage capabilities necessary for optimum driving of high capacitance N-channel MOS memory systems


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    PDF DS3245 C1995 DS3245J DS3245N J16A N16A

    DM74366

    Abstract: DS16149J C1995 DM8096 DS16149 DS16179 DS36149 DS36149J DS36179 7553
    Text: DS16149 DS36149 DS16179 DS36179 Hex MOS Drivers General Description Features The DS16149 DS36149 and DS16179 DS36179 are Hex MOS drivers with outputs designed to drive large capacitive loads up to 500 pF associated with MOS memory systems PNP input transistors are employed to reduce input currents


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    PDF DS16149 DS36149 DS16179 DS36179 DM74366 DS16149J C1995 DM8096 DS36149J 7553

    DS3651-2

    Abstract: DS3653
    Text: DS1651,DS3651 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers Literature Number: SNLS371 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description Features The DS1651/DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory system applications. Switching speeds have been enhanced


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    PDF DS1651 DS3651 DS1651/DS3651 SNLS371 DS3651-2 DS3653

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    power bjt advantages and disadvantages

    Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
    Text: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in


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    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    Untitled

    Abstract: No abstract text available
    Text: DS1628,DS3628 DS1628 DS3628 Octal TRI-STATE RM MOS Drivers Literature Number: SNOSBO3A DS1628 DS3628 Octal TRI-STATE MOS Drivers General Description Features The DS1628 DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive


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    PDF DS1628 DS3628 DS3628

    Untitled

    Abstract: No abstract text available
    Text: DS3245 DS3245 Quad MOS Clock Driver Literature Number: SNOSBO2A DS3245 Quad MOS Clock Driver General Description Features The DS3245 is a quad bipolar-to-MOS clock driver with TTL compatible inputs It is designed to provide high output current and voltage capabilities necessary for optimum driving


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    PDF DS3245 DS3245

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


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    PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    Untitled

    Abstract: No abstract text available
    Text: MOS Memory Handling Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due


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    Untitled

    Abstract: No abstract text available
    Text: DS1649/DS3649/DS1679/DS3679 Hex TRI-STATE TTL to MOS Drivers General Description The DS1649/DS3649 and DS1679/DS3679 are Hex TRI-STATE MOS drivers with outputs designed to drive large capacitive loads up to 500 pF associated with MOS memory systems. PNP input transistors are employed to re­


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    PDF DS1649/DS3649/DS1679/DS3679 DS1649/DS3649 DS1679/DS3679 Fe1649/DS3649 TL/F/7515-5 DS1649/DS3649/DS1679/DS3679 TL/F/7515-8

    75364

    Abstract: No abstract text available
    Text: MOS Memory Interface Circuits DS75364 Dual MOS Clock Driver General Description The D S 75364 is a dual MOS d rive r and in terfa ce c ir c u it th a t operates w ith e ith e r c u rre n t source or voltage source in p u t signals. The device accepts signals fro m


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    PDF DS75364 DS75364 S75364 75364

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


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    PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


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    PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    Untitled

    Abstract: No abstract text available
    Text: LG Semicon MOS MEMORY I DATA BOOK • MEMORY MODULE


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    CDP18S601

    Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
    Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from


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    PDF 132nd CDP18S601 CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007

    CD4036

    Abstract: CD4039AD CD4036A CD4039 CD4036AD cd4039a-direct
    Text: RCA CMOS LSI Products CD4036A, CD4039A COS/MOS 4-Word by 8-Bit Random-Access NDRO Memory Binary Addressing Direct Word-Line Addressing CD4036AD, CD4036AK CD4039AD, CD4039AK Special Features: m COS/MOS logic com patibility at all input and output terminals


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    PDF CD4036A, CD4039A CD4036AD, CD4036AK CD4039AD, CD4039AK CD4036A CD4039A CD4018A CD4029A CD4036 CD4039AD CD4039 CD4036AD cd4039a-direct

    tms 2000

    Abstract: TMS2100 TMS-2000 TMS 2100 TMS2000 TMS 2200
    Text: TMS 2000 JC , NC; TMS 2200 JC. NC PROGRAMMABLE LOGIC ARRAYS MOS LSI features Low-threshold MOS/bipolar technology Static operation Push-pull or single-ended output buffers Optional internal MOS pull-up resistor on inputs T T L compatible CD IP or plastic package


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    MM5232

    Abstract: MM5232J N24B J24A MM5232N
    Text: 3G39VMVM MOS ROMs National Semiconductor MM5232 4096-Bit 512 x 8 or 1024 x 4 ROM General Description Features The MM5232 4096-bit static read only memory is a P-channel enhancement mode m onolithic MOS integrated circuit utilizing a low threshold voltage


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    PDF MM5232 4096-Bit 4096-bit MM5232J N24B J24A MM5232N

    SAE j 726

    Abstract: MM5240 MM5240J
    Text: MM5240 MOS ROMs National Semiconductor MM5240 2560-Bit Static Character Generator General Description Features The MM5240 2560-bit static read only memory is a P-channel enhancement mode monolithic MOS integrated circuit utilizing a tow threshold voltage technology to achieve bipolar compat­


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    PDF MM5240 MM5240 2560-Bit operation--500 SAE j 726 MM5240J

    TL/H/5875-11

    Abstract: No abstract text available
    Text: DS1628/DS3628 National 2 Semiconductor DS1628/DS3628 Octal TRI-STATE MOS Drivers General Description Features The DS1628/DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems. The drivers’


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    PDF DS1628/DS3628 DS1628/DS3628 DS3628. DS1628 DS3628 TL/H/5875-11