100MHZ
Abstract: 133MHZ PC200 V827332U04S
Text: MOSEL VITELIC V827332U04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Registered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages
|
Original
|
V827332U04S
TSOPII-66
V827332U04S
T52-3775
100MHZ
133MHZ
PC200
|
PDF
|
100MHZ
Abstract: 133MHZ PC200 V827332K04SATG V827332K04SXXX
Text: MOSEL VITELIC V827332K04SATG 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Unbuffered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages
|
Original
|
V827332K04SATG
TSOPII-66
V827332K04SATG
100MHZ
133MHZ
PC200
V827332K04SXXX
|
PDF
|
V62C2804096
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V62C2804096 512K X 8, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2804096 is a very low power CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, and active HIGH CE2, an active LOW
|
Original
|
V62C2804096
V62C2804096
32-Pin
36-Ball
Blo081
|
PDF
|
2388
Abstract: 305C M9009 MSM9009
Text: MSM9009 MOSEL VITELIC INC. April 1996 80" Emulation board Features Up to 87.2 seconds voice emulation are provided at 6K sampling rate. MPCM-5 algorithm emulation is provided. Up to 128 sections are provided for three addressing modes, each section comes from a voice file.
|
Original
|
MSM9009
2388
305C
M9009
MSM9009
|
PDF
|
TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
|
Original
|
256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
|
PDF
|
PC200
Abstract: No abstract text available
Text: V826416S04SATG 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization SDRAM Modules ■ Utilizes High Performance 16M x 8 SDRAM in TSOPII-66 Packages
|
Original
|
V826416S04SATG
TSOPII-66
V826416S04SATG
PC200
|
PDF
|
V54C3128164VAT
Abstract: No abstract text available
Text: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
|
Original
|
V54C3128164VAT
143/133/125MHz
V54C3128164VAT
|
PDF
|
TMS44C256
Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore
|
Original
|
16Kbit
64Kbit
256Kbit
600mil)
300mil)
TMS44C256
HY6116 CROSS REFERENCE
sram mcm6264
ZMD cross reference
SIMTEK cross reference
HM50464
soj28 sop28
HM65664A
HM6116
oki cross
|
PDF
|
V62C3161024L
Abstract: No abstract text available
Text: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM
|
Original
|
V62C3161024L
TheV62C3161024L
I/O16.
|
PDF
|
PC2100U
Abstract: PC200 V826516G04S
Text: V826516G04S 128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 MOSEL VITELIC PRELIMINARY Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 16,777,216 x 64 bit organization. ■ Utilizes High Performance 16M x 8 SDRAM in
|
Original
|
V826516G04S
200-PIN
TSOPII-66
V826516G04S
PC2100U
PC200
|
PDF
|
V43658R04VATG-75PC
Abstract: No abstract text available
Text: MOSEL VITELIC V43658R04VATG-75PC 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages
|
Original
|
V43658R04VATG-75PC
PC133
TSOPII-54
V43658R04VATG-75PC
|
PDF
|
CA10
Abstract: V54C3256804VA
Text: MOSEL VITELIC V54C3256804VA HIGH PERFORMANCE 3.3 VOLT 32M X 8 SYNCHRONOUS DRAM 4 BANKS X 8Mbit X 8 PRELIMINARY -7PC -7 -8PC -8 System Frequency fCK 143MHz 143MHz 125MHz 125MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
|
Original
|
V54C3256804VA
143MHz
125MHz
CA10
V54C3256804VA
|
PDF
|
V43658R04VATG-75
Abstract: No abstract text available
Text: MOSEL VITELIC V43658R04VATG-75 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages
|
Original
|
V43658R04VATG-75
PC133
TSOPII-54
V43658R04VATG-75
|
PDF
|
V54C3128164VAT
Abstract: V54C3128164 AAY3
Text: V54C3128164VAT HIGH PERFORMANCE 166/143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 6 7 75 8PC System Frequency fCK 166 MHz 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3 ) 6 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
|
Original
|
V54C3128164VAT
166/143/133/125MHz
V54C3128164VAT
V54C3128164
AAY3
|
PDF
|
|
|
V43728S04VTG-10
Abstract: V43728S04VTG-10PC V43728S04VTG-12 csc 2313 f
Text: MOSEL VITELIC PRELIMINARY V43728S04VTG 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 AND 100 MHZ SDRAM UNBUFFERED DIMM Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages
|
Original
|
V43728S04VTG
PC100
TSOPII-54
V43728S04VTG
V43728S04VTG-10
V43728S04VTG-10PC
V43728S04VTG-12
csc 2313 f
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC V404J232 and V404J236 2M X 32 and 2M X 36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The V404J236 Memory
|
OCR Scan
|
V404J232
V404J236
72-lead
72lead
V404J232/236
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC PRELIMINARY V104J232, V104J236 512K x 32, 512K x 36 SIMM Features Description m 524,288 x 32 bit or 524, 288 x 36 bit The V 104J232 Memory Module is organized as 52 4 ,2 8 8 x 32 bits in a 72-lead single-in-line module. The 51 2K x 32 memory module uses 16 MoselVitelic 256K x 4 DRAMs. The V104J236 is organized
|
OCR Scan
|
V104J232,
V104J236
104J232
72-lead
V104J232/236
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL-VITELIC V404J32and V404J36 1M x32and 1M x36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod
|
OCR Scan
|
V404J32and
V404J36
x32and
72-lead
V404J32
77777F77\i
V404J32/36
|
PDF
|
DH311
Abstract: No abstract text available
Text: M OSEL v m u c PRELIMINARY V404J32 and V404J36 1M x 32 and 1M x 36 CMOS MEMORY MODULES Features Description u • ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod
|
OCR Scan
|
V404J32
V404J36
72-lead
V404J32/36
DH311
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal
|
OCR Scan
|
V408J32
72-lead
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V408J32 1M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal
|
OCR Scan
|
V408J32
72-lead
408J32
b353311
V408J32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E U C P R E LIM IN A R Y V1780J32 2 M x 32 E D O M E M O R Y M O D U LE Features Description m 2,097,152 x 32 bit organization The V1708J32 memory module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 2M x 32 memory module uses 4 MoselVitelic 1M x 16 DRAMs. The x32 modules are ideal
|
OCR Scan
|
V1780J32
72-lead
cycles/16ms
V1708J32
00037bl
V1780J32
b3S3311
QQD37b2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O S E L VITELIC PRELIMINARY V408J232 2M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The x32 modules are Ideal
|
OCR Scan
|
V408J232
72-lead
408J232
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M OSEL V I T E L I C P R E LIM IN A R Y V62C3181024 2 .7 VOL T 1 2 8 K X 8 STA TIC R A M • Packages - 32-pin TSOP Standard - 32-pin 440 mil SOP (525 mil pin-to-pin) Features ■ High-speed: 35, 70 ns ■ Ultra low DC operating current of 25 mA (max.) - TTL Standby: 3 mA (Max.)
|
OCR Scan
|
V62C3181024
32-pin
576-bit
V62C3181024
|
PDF
|