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    MOSFE 600V Search Results

    MOSFE 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    MOSFE 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SM MK02 260IS S Advan nced N-Ch Po ower MOSFE ET SW WITCHIN NG REG GULATO OR APPLICATIO ON Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=600 0V Min. • Low gate charge: c Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω Ω (Typ.)


    Original     		PDF 260IS SMK026 SMK0260 12-MAR-13 KSD-T6Q018-000

    Untitled

    Abstract: No abstract text available
    Text: SM MK01 160IS S Advan nced N-Ch Po ower MOSFE ET SW WITCHIN NG REG GULATO OR APPLICATIO ON Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=600 0V Min. • Low gate charge: c Qg=3.9nC (Typ.) • Low drain-source On resistance: RDS(on)=11.5 5Ω (Max.)


    Original     		PDF 160IS SMK016 SMK0160 22-MAR-12 KSD-T6Q014-000

    GT30J124

    Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。


    Original     		PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125

    Untitled

    Abstract: No abstract text available
    Text: CÄTÄLQO_ Æ\\tTOTÎ nF„ rFS.,«. PRODUCT N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50n SDF15N60 GAF FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • L O W IR LOSSES


    OCR Scan     		PDF SDF15N60 MIL-S-19500 IF-15A /dt-100A/

    Untitled

    Abstract: No abstract text available
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA Max @ VDS = 600V


    OCR Scan     		PDF SSR/U1N60A 1N60A

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541