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    MOSFET 074 Search Results

    MOSFET 074 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 074 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    us 945 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9030M/D MRF9030MR1 us 945 mosfet

    MRF5S9070NR

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 MRF5S9070NR

    Untitled

    Abstract: No abstract text available
    Text: PLA110 Single Pole OptoMOS Relays Load Voltage Load Current Max RON PLA110 400 150 22 Description PLA110 is a 1-Form-A solid state relay which uses optically coupled MOSFET technology to provide 3750V of input to output isolation. The efficient MOSFET switches


    Original     		PDF PLA110 PLA110 3750VRMS DS-PLA110-R4

    BS7002

    Abstract: PLA110 PLA110S PLA110STR
    Text: PLA110 Single Pole OptoMOS Relays Load Voltage Load Current Max RON PLA110 400 150 22 Description PLA110 is a 1-Form-A solid state relay which uses optically coupled MOSFET technology to provide 3750V of input to output isolation. The efficient MOSFET switches


    Original     		PDF PLA110 PLA110 DS-PLA110-R5 BS7002 PLA110S PLA110STR

    BS7002

    Abstract: PLA134 PLA134S PLA134STR
    Text: PLA134 Single Pole OptoMOS Relays PLA134 100 350 3 Load Voltage Load Current Max RON Description The PLA134 is a 1-Form-A solid state relay which uses optically coupled MosFET technology to provide 3750V of input to output isolation. The efficient MosFET switches


    Original     		PDF PLA134 PLA134 DS-PLA134-R2 BS7002 PLA134S PLA134STR

    Untitled

    Abstract: No abstract text available
    Text: SK150MBL055T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # #  , 0. /         , 0. -4 /5 6  9 6 5  , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4


    Original     		PDF SK150MBL055T

    AN1955

    Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1

    Untitled

    Abstract: No abstract text available
    Text: MIC4414/15 - Ultra-Small 1.2mm x 1.2mm Four-Pin Low-Side MOSFET Drivers 1.5A, 4.5V to 18V Low-Side MOSFET Drivers Optimal Efficiency at Every Level Ideal for use in: Micrel, Inc. is a leading global manufac- • 3.5Ω output resistance at 18V and 9Ω output


    Original     		PDF MIC4414/15 MIC4414) MIC4415) MIC4414/5-102012

    Untitled

    Abstract: No abstract text available
    Text: SK 150 MBL 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # #  , 0. /         , 0. -4 /5 6  9 6 5  , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC4414/15 - Ultra-Small 1.2mm x 1.2mm Four-Pin Low-Side MOSFET Drivers 1.5A, 4.5V to 18V Low-Side MOSFET Drivers Optimal Efficiency at Every Level Ideal for use in: Micrel, Inc. is a leading global manufac- • 3.5Ω output resistance at 18V and 9Ω output


    Original     		PDF MIC4414/15 000pF mo470, MIC4414/5-102012

    Mbl transistor

    Abstract: No abstract text available
    Text: SK 150 MBL 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # #  , 0. /         , 0. -4 /5 6  9 6 5  , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC5019 — Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump Designed to Switch an N-Channel Enhancement Type MOSFET in High- or Low-Side Applications • 2.7V to 9V supply voltage range • 16V gate drive at VDD = 9V • 9.2V gate drive at VDD = 3.3V


    Original     		PDF MIC5019 Soleno3-470, MIC5019-102012

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045M/D MRF9045M MRF9045MR1

    MRF9045MR1

    Abstract: TO270
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MR1 TO270

    MRF9030MBR1

    Abstract: MRF9030MR1 TO-270-2
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc.


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 TO-270-2

    A113

    Abstract: MRF9045MBR1 MRF9045MR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1

    16TPB47M

    Abstract: FDFS2P102A FDS6675 MLPQ-12 SC4508A SC4508AMLTRT Si4831DY TP10
    Text: SC4508A Buck or Buck-Boost Inverting Current Mode Controller POWER MANAGEMENT Description Features The SC4508A is a low voltage current mode switching regulator controller that drives a P-channel power MOSFET with programmable switching frequency. It can


    Original     		PDF SC4508A SC4508A MLPQ-12, 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508AMLTRT Si4831DY TP10

    SC4508ABUCK-BOOSTEVB

    Abstract: SC4508A 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508ABUCKEVB SC4508AMLTRT O12V
    Text: SC4508A Buck or Buck-Boost Inverting Current Mode Controller POWER MANAGEMENT Description Features The SC4508A is a low voltage current mode switching regulator controller that drives a P-channel power MOSFET with programmable switching frequency. It can


    Original     		PDF SC4508A SC4508A MLPQ-12, SC4508ABUCK-BOOSTEVB 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508ABUCKEVB SC4508AMLTRT O12V

    si4831

    Abstract: FDFS2P102A equivalent 292N
    Text: SC4508A Buck or Buck-Boost Inverting Current Mode Controller POWER MANAGEMENT Description Features The SC4508A is a low voltage current mode switching regulator controller that drives a P-channel power MOSFET with programmable switching frequency. It can


    Original     		PDF SC4508A si4831 FDFS2P102A equivalent 292N

    16TPB47M

    Abstract: FDFS2P102A FDS6675 MLPQ-12 SC4508A SC4508ABUCK-BOOSTEVB SC4508ABUCKEVB SC4508AMLTRT si4831
    Text: SC4508A Buck or Buck-Boost Inverting Current Mode Controller POWER MANAGEMENT Description Features The SC4508A is a low voltage current mode switching regulator controller that drives a P-channel power MOSFET with programmable switching frequency. It can


    Original     		PDF SC4508A SC4508A 16TPB47M FDFS2P102A FDS6675 MLPQ-12 SC4508ABUCK-BOOSTEVB SC4508ABUCKEVB SC4508AMLTRT si4831

    Untitled

    Abstract: No abstract text available
    Text: LTC1696 Overvoltage Protection Controller FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO ±2% Overvoltage Threshold Accuracy Low Profile 1mm ThinSOTTM Package Gate Drive for SCR Crowbar or External N-Channel Disconnect MOSFET Monitors Two Output Voltages


    Original     		PDF LTC1696 dis1735 LTC1922-1 LTC1960 36-Pin 1696f

    dual 2N6507 charger

    Abstract: SCR 12V battery charging SCR Crowbar scr 12v battery charger 2n6507 battery charger 2N6507 SCR 8808 SCR TRIGGER PULSE TRANSFORMER tp 8799 2N3904
    Text: LTC1696 Overvoltage Protection Controller U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO ±2% Overvoltage Threshold Accuracy Low Profile 1mm ThinSOTTM Package Gate Drive for SCR Crowbar or External N-Channel Disconnect MOSFET Monitors Two Output Voltages


    Original     		PDF LTC1696 LTC1735 LTC1922-1 LTC1960 36-Pin 1696f dual 2N6507 charger SCR 12V battery charging SCR Crowbar scr 12v battery charger 2n6507 battery charger 2N6507 SCR 8808 SCR TRIGGER PULSE TRANSFORMER tp 8799 2N3904

    Untitled

    Abstract: No abstract text available
    Text: L ir m TECHNOLOGY LT1161 Q uad Protected High-Side MOSFET Driver F€OTUR€S D c s c n iP T io n • Fully Enhances N-Channel MOSFET Switches ■ 8V to 48V Power Supply Range ■ Protected from -15V to 60V Supply Transients ■ Individual Short-Circuit Protection


    OCR Scan     		PDF LT1161 20-Lead LT1161 containi24V/3A 1N4744 MTP10N40E 50V/1A PS2501-4