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    MOSFET 09N70GP Search Results

    MOSFET 09N70GP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

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    09N70P-A

    Abstract: 09N70P SSM09N70GP-A 09n70 09N70GP-A mosfet 09n70gp marking codes transistors SSs VDS25V
    Text: SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS ON 0.75Ω ID 9A DESCRIPTION The SSM09N70GP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC


    Original     		PDF SSM09N70GP-A SSM09N70GP-A O-220 O-220 09N70P-A 09N70P 09n70 09N70GP-A mosfet 09n70gp marking codes transistors SSs VDS25V