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    MOSFET 1200V ROHM Search Results

    MOSFET 1200V ROHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1200V ROHM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		10-PZ12NMA027MR-M340F68Y PDF

    10PZ12B

    Abstract: No abstract text available
    Text: 10-PZ12B2A040MR01-M330L68Y target datasheet flowBOOST 0 SiC 1200V/ 40mΩ Features flowBOOST 0 SiC TM ● Rohm SiC-Power MOSFET´s and Schottky Diodes ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current


    Original     		10-PZ12B2A040MR01-M330L68Y 10PZ12B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		SCT2450KE 450mW O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		SCT2160KE 160mW O-247 R1102B PDF

    sct2080ke

    Abstract: SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412
    Text: SCT2080KE SCT2080KE N-channel SiC power MOSFET Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain


    Original     		SCT2080KE O-247 SCT2080KE R1120A SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412 PDF

    SiC POWER MOSFET

    Abstract: SCT2080 MOSFET 1200V ROHM
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source


    Original     		SCT2080KE O-247 SCT2080KE R1102S SiC POWER MOSFET SCT2080 MOSFET 1200V ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2280KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 280mW ID 14A PD 108W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		SCT2280KE 280mW O-247 R1102B PDF

    SiC POWER MOSFET

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 SCH2080KE R1120A SiC POWER MOSFET PDF

    sch2080

    Abstract: SCH2080KE
    Text: SCH2080KE SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 SCH2080KE R1120A sch2080 PDF

    sch2080

    Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
    Text: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed


    Original     		SCH2080KE O-247 R1120A sch2080 SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		SCT2080KE O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2305 450mW R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2301 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 450m ID 10A PD 85W TO-247 (1) (2) (3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 (1) 3) Fast reverse recovery


    Original     		SCT2450KE O-247 R1102B PDF

    dc/tx/1/2/PS/SCT2080KE

    Abstract: No abstract text available
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 (1) (2) (3) Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) (1) Gate (2) Drain (3) Source


    Original     		SCT2080KE O-247 R1102S dc/tx/1/2/PS/SCT2080KE PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2280KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 280m ID 14A PD 108W TO-247 (1) (2) (3) Inner circuit (2) Features 1) Low on-resistance 2) Fast switching speed *1 (1) Gate (2) Drain (3) Source (1) 3) Fast reverse recovery


    Original     		SCT2280KE O-247 R1102B PDF

    Solar Charge Controller driver circuits

    Abstract: sch2080
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed


    Original     		SCH2080KE O-247 R1120A Solar Charge Controller driver circuits sch2080 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102S PDF

    SCT2080KE

    Abstract: SCT2080
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode


    Original     		SCT2080KE O-247 R1120A SCT2080KE SCT2080 PDF

    SCH2080KE

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102S SCH2080KE PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		SCH2080KE O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2160KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 160m ID 22A PD 165W TO-247 (1) (2) (3) Inner circuit (2) Features 1) Low on-resistance 2) Fast switching speed *1 (1) Gate (2) Drain (3) Source (1) 3) Fast reverse recovery


    Original     		SCT2160KE O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		S2306 160mW R1102B PDF