Untitled
Abstract: No abstract text available
Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using
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mosfet switch
Abstract: mosfet price ADM1014 ADM1070
Text: Hot Plug Controllers Hot Swap Controller Side One or Side Two Model Internal MOSFET Switch +3.3V Aux Internal PMOS Switch +12V Internal NMOS Switch -12V External MOSFET Switch +3.3V External MOSFET Switch +5V 375mA 500mA 1A 2.9V 110nsec 16msec 4.5usec 0.25 ohm
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375mA
500mA
110nsec
16msec
250mA
750mA
35ohm
180mA
mosfet switch
mosfet price
ADM1014
ADM1070
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p-channel pspice model
Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is
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RF1K49092
RF1K49092
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
p-channel pspice model
AN9321
AN9322
MS-012AA
RF1K4909296
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RF1K49093
Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses
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RF1K49093
RF1K49093
AN9321
AN9322
MS-012AA
RF1K4909396
TB334
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RF1K4909396
Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses
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RF1K49093
RF1K4909396
delta motor
RF1K49093
AN9321
AN9322
MS-012AA
TB334
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PDF
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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IRF7338
Abstract: MOSFET N-CHANNEL 60v 60A
Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372B
IRF7338
EIA-481
EIA-541.
IRF7338
MOSFET N-CHANNEL 60v 60A
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω
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4372A
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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relay 12v dc 5 chan
Abstract: No abstract text available
Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V Title This Dual P-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses
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RF1K49093
relay 12v dc 5 chan
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RF1K49093
Abstract: RF1K4909396 AN9321 AN9322 MS-012AA TB334
Text: RF1K49093 Data Sheet January 2002 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49093
130opment.
RF1K49093
RF1K4909396
AN9321
AN9322
MS-012AA
TB334
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EIA-541
Abstract: F7101 IRF7101 IRF7338PBF
Text: PD - 95197 IRF7338PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω
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IRF7338PbF
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
IRF7338PBF
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RF1K49093
Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49093
RF1K49093
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
AN7254
AN9321
AN9322
MS-012AA
RF1K4909396
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PDF
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AN9321
Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
Text: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49092
AN9321
MS-012AA
RF1K49092
RF1K4909296
TB334
AN9322
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PDF
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AN9321
Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49092
AN9321
MS-012AA
RF1K49092
RF1K4909296
TB334
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Untitled
Abstract: No abstract text available
Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description 2 HEXFET® 3 Power MOSFETs from International Rectifier
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IRF7702
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Untitled
Abstract: No abstract text available
Text: PD - 96146 IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V -10A
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F7701G
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MOSFET 700V 10A
Abstract: EIA-541 IRF7701 IRF7702
Text: PD - 93940 IRF7701 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V -10A -8.5A 0.022@VGS = -1.8V -7.0A
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G252-7105
MOSFET 700V 10A
EIA-541
IRF7701
IRF7702
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Untitled
Abstract: No abstract text available
Text: PD - 96146A IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V
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IRF7701GPbF
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EIA-541
Abstract: IRF7702
Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V
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IRF7702
EIA-541
IRF7702
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Untitled
Abstract: No abstract text available
Text: PD-96027 IRF7702PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V -8.0A
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Untitled
Abstract: No abstract text available
Text: FOR REVIEW ONLY IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V
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Untitled
Abstract: No abstract text available
Text: FOR REVIEW ONLY IRF7702GPbF HEXFET Power MOSFET l l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V
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Untitled
Abstract: No abstract text available
Text: PD-96027 IRF7702PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V -8.0A
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PD-96027
IRF7702PbF
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Untitled
Abstract: No abstract text available
Text: PD- 96147 IRF7702GPbF HEXFET Power MOSFET l l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V
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