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    MOSFET 12V- 1.5A Search Results

    MOSFET 12V- 1.5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 12V- 1.5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using


    Original     		PDF RF1K49092

    mosfet switch

    Abstract: mosfet price ADM1014 ADM1070
    Text: Hot Plug Controllers Hot Swap Controller Side One or Side Two Model Internal MOSFET Switch +3.3V Aux Internal PMOS Switch +12V Internal NMOS Switch -12V External MOSFET Switch +3.3V External MOSFET Switch +5V 375mA 500mA 1A 2.9V 110nsec 16msec 4.5usec 0.25 ohm


    Original     		PDF 375mA 500mA 110nsec 16msec 250mA 750mA 35ohm 180mA mosfet switch mosfet price ADM1014 ADM1070

    p-channel pspice model

    Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
    Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    Original     		PDF RF1K49092 RF1K49092 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) p-channel pspice model AN9321 AN9322 MS-012AA RF1K4909296

    RF1K49093

    Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 RF1K49093 AN9321 AN9322 MS-012AA RF1K4909396 TB334

    RF1K4909396

    Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 RF1K4909396 delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372C IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    IRF7338

    Abstract: MOSFET N-CHANNEL 60v 60A
    Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372B IRF7338 EIA-481 EIA-541. IRF7338 MOSFET N-CHANNEL 60v 60A

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω


    Original     		PDF 4372A IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    relay 12v dc 5 chan

    Abstract: No abstract text available
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V Title This Dual P-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 relay 12v dc 5 chan

    RF1K49093

    Abstract: RF1K4909396 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet January 2002 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49093 130opment. RF1K49093 RF1K4909396 AN9321 AN9322 MS-012AA TB334

    EIA-541

    Abstract: F7101 IRF7101 IRF7338PBF
    Text: PD - 95197 IRF7338PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω


    Original     		PDF IRF7338PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 IRF7338PBF

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
    Text: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334 AN9322

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
    Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334

    Untitled

    Abstract: No abstract text available
    Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description 2 HEXFET® 3 Power MOSFETs from International Rectifier


    Original     		PDF 93849C IRF7702

    Untitled

    Abstract: No abstract text available
    Text: PD - 96146 IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V -10A


    Original     		PDF IRF7701GPbF F7701G

    MOSFET 700V 10A

    Abstract: EIA-541 IRF7701 IRF7702
    Text: PD - 93940 IRF7701 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V -10A -8.5A 0.022@VGS = -1.8V -7.0A


    Original     		PDF IRF7701 G252-7105 MOSFET 700V 10A EIA-541 IRF7701 IRF7702

    Untitled

    Abstract: No abstract text available
    Text: PD - 96146A IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V


    Original     		PDF 6146A IRF7701GPbF

    EIA-541

    Abstract: IRF7702
    Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V


    Original     		PDF 93849C IRF7702 EIA-541 IRF7702

    Untitled

    Abstract: No abstract text available
    Text: PD-96027 IRF7702PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V -8.0A


    Original     		PDF PD-96027 IRF7702PbF

    Untitled

    Abstract: No abstract text available
    Text: FOR REVIEW ONLY IRF7701GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V


    Original     		PDF IRF7701GPbF

    Untitled

    Abstract: No abstract text available
    Text: FOR REVIEW ONLY IRF7702GPbF HEXFET Power MOSFET l l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V


    Original     		PDF IRF7702GPbF

    Untitled

    Abstract: No abstract text available
    Text: PD-96027 IRF7702PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V -8.0A


    Original     		PDF PD-96027 IRF7702PbF

    Untitled

    Abstract: No abstract text available
    Text: PD- 96147 IRF7702GPbF HEXFET Power MOSFET l l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V


    Original     		PDF IRF7702GPbF