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    MOSFET 130 N IRF Search Results

    MOSFET 130 N IRF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 130 N IRF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motor IG 2200 19

    Abstract: 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U
    Text: PD-90418B IRFN450 JANTX2N7228U HEXFET POWER MOSFET JANTXV2N7228U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 500 Volt, 0.415Ω Product Summary Part Number IRFN450 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power


    Original     		PDF PD-90418B IRFN450 JANTX2N7228U JANTXV2N7228U MIL-PRF-19500/592] motor IG 2200 19 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U

    MOSFET DRIVER circuits

    Abstract: No abstract text available
    Text: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90712E O-254AA) IRFM350 IRFM350 JANTX2N7227 JANTXV2N7227 MIL-PRF-19500/592 O-254AA. MIL-PRF-19500 MOSFET DRIVER circuits

    Untitled

    Abstract: No abstract text available
    Text: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90712E O-254AA) IRFM350 JANTX2N7227 JANTXV2N7227 MIL-PRF-19500/592 O-254AA. MIL-PRF-19500

    CG130

    Abstract: V/L175C L175C IN 47 46A
    Text: PD - 97035D IRFB4227PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications


    Original     		PDF 97035D IRFB4227PbF 00W-500W O-220AB CG130 V/L175C L175C IN 47 46A

    irfp064 driver circuit

    Abstract: IRFP064 IRFP064 APPLICATION ls 7400 SiHFP064
    Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP064, SiHFP064 O-247 O-247 18-Jul-08 irfp064 driver circuit IRFP064 IRFP064 APPLICATION ls 7400

    Untitled

    Abstract: No abstract text available
    Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP064, SiHFP064 O-247 O-247 12-Mar-07

    irfp064 driver circuit

    Abstract: IRFP064 IRFP064 APPLICATION
    Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP064, SiHFP064 O-247 O-247 18-Jul-08 irfp064 driver circuit IRFP064 IRFP064 APPLICATION

    irfp064

    Abstract: No abstract text available
    Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP064, SiHFP064 O-247 O-247 18-Jul-08 irfp064

    9D140

    Abstract: No abstract text available
    Text: IRFP 250 VDSS = 200 V ^D cont = 30 A Standard Power MOSFET R DS,on) = 85 m Q N-Channel Enhancement Mode Symbol Test Conditions V ¥ dss T j =25°C to150°C 200 V v T j = 25°Cto150°C; RGS= 1 Mi2 200 V < (/> >8 Continuous ¿20 V v Transient 130 V T c =25°C


    OCR Scan     		PDF to150 Cto150 O-247 9D140

    Untitled

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan     		PDF IRFP250A

    Untitled

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan     		PDF IRFP250A G03b332 0G3b333

    VUO50

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 uA M ax. @ ■ V q s 2 = s ^D S(on) =


    OCR Scan     		PDF IRFP250A ERFP250A VUO50

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BV dss = 200 V • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^DS on = 0.085 £2 lD = 21.3 A ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF IRFS250A GG3b333 G03b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BV • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge dss = ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■


    OCR Scan     		PDF IRFS250A

    IRFP55

    Abstract: IRFP256 IRFP255 IRFP551 IRFP254 IRFP257 TG-247 mosfet irfp 250 N
    Text: Rugged Power MOSFETs File Num ber 2289 IRFP254, IRFP255 IRFP256, IRFP257 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDston = 0.14 O and 0.17 Cl N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFP254, IRFP255 IRFP256, IRFP257 92CS-42690 IRFP255, IRFP256 IRFP257 92GS-44116 IRFP55 IRFP255 IRFP551 IRFP254 TG-247 mosfet irfp 250 N

    IRFS250A

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power M O SFET FEATURES B V dss • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ID ■ E xtended S afe O pe ra ting A rea ■


    OCR Scan     		PDF IRFS250A IRFS250A

    1RFP250

    Abstract: No abstract text available
    Text: • 4302571 00S4205 IDI ■ HAS IR FP250/251/252/253 IRFP250R/251R/252R /253R Q RHARRIS N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO -247 TOP VIEW • 27A and 33A, 150V - 200V • i"DS on = 0.085ÍÍ and 0.120ft DRAIN


    OCR Scan     		PDF 00S4205 FP250/251/252/253 IRFP250R/251R/252R /253R 120ft 1RFP250, IRFP251, IRFP252, IRFP253 IRFP250R, 1RFP250

    IRFP256

    Abstract: H30E2 IRFP 620 irfp254
    Text: H30E271 0054210 E7T • HAS H a r r is IRFP254, IRFP255 IRFP256, IRFP257 N-Channel Power MOSFETs Avalanche Energy Rated A ug ust 19 9 1 Features Package TO-247 TOP VIEW • 21A and 23A, 250V and 275V • rDS on = 0.14 i l and 0 .1 7ft • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF H30E271 IRFP254, IRFP255 IRFP256, IRFP257 O-247 IRFP255, IRFP257 IRFP256 H30E2 IRFP 620 irfp254

    cd200

    Abstract: No abstract text available
    Text: IRFS240A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V q ss = 2 0 0 v Avalanche Ragged Technology Rugged Gate Oxide Technology Lower input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ VOS = 200V


    OCR Scan     		PDF IRFS240A cd200

    Untitled

    Abstract: No abstract text available
    Text: IRFS450 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^ D S o n = 0 .4 Î2 o II ♦ Lower Input Capacitance CT> ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450

    Untitled

    Abstract: No abstract text available
    Text: IRFS450A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^ D S o n = 0 .4 Î2 o II ♦ Lower Input Capacitance CT> ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450A

    D1033

    Abstract: No abstract text available
    Text: IRFS450A Advanced Power MOSFET FEATURES B V qss • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ VOS= 500V ■


    OCR Scan     		PDF IRFS450A D1033

    Untitled

    Abstract: No abstract text available
    Text: IRFR234 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K


    OCR Scan     		PDF IRFR234

    IRFP450A

    Abstract: No abstract text available
    Text: IRFP450A A dvanced Power MOSFET FEATURES B V dss = 500 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .4 £ 2 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP450A IRFP450A