Untitled
Abstract: No abstract text available
Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides
|
Original
|
FDPF17N60NT
|
PDF
|
AN799 Matching MOSFET Drivers to MOSFETs
Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of
|
Original
|
AN799
TC4424
D-81739
DS00799A*
DS00799A-page
AN799 Matching MOSFET Drivers to MOSFETs
an799
an799 microchip
IRF450A
TC4424 motor driver
Matching MOSFET Drivers to MOSFETs
TC4431 application
TC4420 die
MOSFET TEST SIMPLE Procedures
TC4424
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
|
Original
|
FDPF4N60NZ
|
PDF
|
FDD4N60NZ
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
|
Original
|
FDD4N60NZ
FDD4N60NZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
|
Original
|
FDD4N60NZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
|
Original
|
FDPF4N60NZ
FDPF4N60NZ
|
PDF
|
mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
|
Original
|
IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
|
PDF
|
Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
|
Original
|
RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
|
Original
|
RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
FDB28N30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM55CT3AG
|
PDF
|
800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM55CT3AG
800V 40A mosfet
mosfet 1200V 40A
MOSFET 40A 600V
APTMC60TLM55CT3AG
|
PDF
|
a7840
Abstract: fdfs6n303
Text: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductors FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and
|
Original
|
FDFS6N303
a7840
fdfs6n303
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 m Features Description • RDS on = 108 m (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
|
Original
|
FDB28N30
FDB28N30
|
PDF
|
|
|
IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
|
Original
|
IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
IXZ2210N50L
"RF MOSFET" 300W
mosfet 4702
9540 mosfet
IXYS RF
|
PDF
|
VEC2803
Abstract: No abstract text available
Text: VEC2803 Ordering number : ENN8202 VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
|
Original
|
VEC2803
ENN8202
VEC2803
|
PDF
|
VEC2602
Abstract: No abstract text available
Text: VEC2602 Ordering number : ENN8021 N-Channel Silicon MOSFET VEC2602 General-Purpose Switching Device Applications Features • • • • Best suited for inverter applications. The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
|
Original
|
VEC2602
ENN8021
VEC2602
|
PDF
|
Mosfet
Abstract: SSF3036C
Text: SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS on 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits Advanced Process Technology
|
Original
|
SSF3036C
3036C
3000pcs
10pcs
30000pcs
120000pcs
Mosfet
SSF3036C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.
|
Original
|
UT150N04
UT150N04
UT150N04L-TA3-T
UT150N04G-TA3-T
O-220
QW-R502-659
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.
|
Original
|
UT150N04
UT150N04
UT150N04L-TA3-T
UT150N04G-TA3-T
O-220
QW-R502-650
|
PDF
|
fqpf7n80c
Abstract: FQP7N80C
Text: FQP7N80C / FQPF7N80C N-Channel QFET MOSFET 800 V, 6.6 A, 1.9 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
FQP7N80C
FQPF7N80C
FQPF7N80C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTF1404 Preliminary Power MOSFET 160A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTF1404 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.
|
Original
|
UTF1404
UTF1404
UTF1404L-TA3-T
UTF1404G-TA3-T
O-220
QW-R502-679
|
PDF
|
IRF8734PBF
Abstract: IRF8734TRPBF
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
|
Original
|
IRF8734PbF
10formation:
IRF8734PBF
IRF8734TRPBF
|
PDF
|
HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
|
OCR Scan
|
PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
|
PDF
|
