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    MOSFET 1980 Search Results

    MOSFET 1980 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1980 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8  Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and


    Original     		PDF FDPF10N60ZUT FDPF10N60ZUT 50nsec

    Untitled

    Abstract: No abstract text available
    Text: FDPF10N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 9 A, 800 mΩ Features Description • RDS on = 650 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDPF10N60ZUT 50nsec

    200B

    Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF5P20180/D MRF5P20180R6 200B MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA

    transistor rf m 1104

    Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6

    MOSFET 1300 F2

    Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


    Original     		PDF MRF19125/D MRF19125R3 MOSFET 1300 F2 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930


    Original     		PDF MRF5P20180/D MRF5P20180R6

    TH 2190 Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21240/D MRF5P21240R6 TH 2190 Transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19125/D MRF19125R3 MRF19125/D

    AN-1005

    Abstract: No abstract text available
    Text: PD - 96098 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZSPbF IRF2903ZLPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V


    Original     		PDF IRF2903ZSPbF IRF2903ZLPbF AN-994. AN-1005

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    mosfet VDS 30V ID 18A TO 252

    Abstract: AN-1005
    Text: PD - 96098 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZSPbF IRF2903ZLPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V


    Original     		PDF IRF2903ZSPbF IRF2903ZLPbF AN-994. mosfet VDS 30V ID 18A TO 252 AN-1005

    APT0502

    Abstract: No abstract text available
    Text: APTML50UM90R020T1AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML50UM90R020T1AG APT0502

    APT0502

    Abstract: No abstract text available
    Text: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML1002U60R020T3AG APT0502

    Untitled

    Abstract: No abstract text available
    Text: APTML602U12R020T3AG VDSS = 600V RDSon = 125m typ @ Tj = 25°C ID = 45A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features      Linear MOSFET Very low stray inductance


    Original     		PDF APTML602U12R020T3AG

    Untitled

    Abstract: No abstract text available
    Text: APTML502UM90R020T3AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML502UM90R020T3AG

    Untitled

    Abstract: No abstract text available
    Text: APTML102UM09R004T3AG VDSS = 100V RDSon = 09m typ @ Tj = 25°C ID = 154A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features      Linear MOSFET Very low stray inductance


    Original     		PDF APTML102UM09R004T3AG

    depletion MOSFET SPICE

    Abstract: depletion MOSFET IRFZ20 Theory of Modern Electronic Semiconductor Device subcircuit with power switch new cosmos NMOS MODEL PARAMETERS SPICE
    Text: APPLICATION NOTE A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL by M. Melito, F. Portuese ABSTRACT The increasing complexity of Power MOSFET technology and the inclusion, on the same chip, of more and more intelligence together with the power


    Original     		PDF

    thermistor R55

    Abstract: APT0502 mosfet 10a 800v high power sensor ptc
    Text: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML1002U60R020T3AG thermistor R55 APT0502 mosfet 10a 800v high power sensor ptc

    APT9903

    Abstract: RF Amplifier 500w 175 mhz schematic rf Power supply 500w plasma Class E amplifier n-channel 500w RF power mosfet RF Amplifier 500w class E power amplifier 13.56 FERRITE TRANSFORMER 500W spice model ARF448A ARF448A
    Text: APPLICATION NOTE By: APT9903 Richard Frey, P.E. 500W, CLASS E 27.12 MHz AMPLIFIER USING A SINGLE PLASTIC MOSFET 1 APT9903 500W, Class E 27.12 MHz Amplifier Using A Single Plastic MOSFET Richard Frey, P.E. Advanced Power Technology, Inc. Bend, Oregon 97702 USA


    Original     		PDF APT9903 O-247 APT9903 RF Amplifier 500w 175 mhz schematic rf Power supply 500w plasma Class E amplifier n-channel 500w RF power mosfet RF Amplifier 500w class E power amplifier 13.56 FERRITE TRANSFORMER 500W spice model ARF448A ARF448A

    Untitled

    Abstract: No abstract text available
    Text: APTML102UM09R004T3AG VDSS = 100V RDSon = 09mΩ typ @ Tj = 25°C ID = 154A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML102UM09R004T3AG

    Untitled

    Abstract: No abstract text available
    Text: APTML60U12R020T1AG VDSS = 600V RDSon = 125mΩ typ @ Tj = 25°C ID = 45A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML60U12R020T1AG

    25c2625

    Abstract: MHW1910 MHW1910-1 mos 4801
    Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ


    Original     		PDF MHW1910/D MHW1910-1 301AW MHW1910 25c2625 MHW1910-1 mos 4801

    APT0502

    Abstract: No abstract text available
    Text: APTML502UM90R020T3AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML502UM90R020T3AG bot250 APT0502

    Untitled

    Abstract: No abstract text available
    Text: APTML50UM90R020T1AG VDSS = 500V RDSon = 90mΩ typ @ Tj = 25°C ID = 52A* @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance


    Original     		PDF APTML50UM90R020T1AG