Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 1RF740 Search Results

    MOSFET 1RF740 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1RF740 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated


    OCR Scan     		1RF740LC D-6380 Q021S61 PDF

    1RF740

    Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
    Text: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer


    OCR Scan     		O-220 L50KQ 1RF740 mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741 PDF

    SL-1-C1-0R050L

    Abstract: No abstract text available
    Text: ANALOG ► DEVICES Precision Voltage Regulator Controller ADP3310 FEATURES ±1.5% Accuracy Over Line, Load and Temperature Low Power BiCMOS: 800 |*.A Quiescent Current Shutdown Current: 1 |j.A Typical Stable with 10 |iF Load Capacitor +2.5 V to +15 V Operating Range


    OCR Scan     		ADP3310 Q052bbH SL-1-C1-0R050L PDF