Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 20V 80A Search Results

    MOSFET 20V 80A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 20V 80A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF7F3704

    Abstract: TC.. 12A MOSFET Drivers 4.5v to 100v input regulator
    Text: PD-94340B HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.035Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		PD-94340B IRF7F3704 O-205AF IRF7F3704 TC.. 12A MOSFET Drivers 4.5v to 100v input regulator PDF

    IRF7F3704

    Abstract: 4.5v to 100v input regulator
    Text: PD - 94340A HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.035Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		4340A IRF7F3704 O-205AF IRF7F3704 4.5v to 100v input regulator PDF

    IRF7F3704

    Abstract: TYPE 310 4.5v to 100v input regulator
    Text: PD - 94340 HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.05Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		IRF7F3704 O-205AF IRF7F3704 TYPE 310 4.5v to 100v input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94340B HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.035Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		PD-94340B IRF7F3704 O-205AF PDF

    STD100NH02L

    Abstract: No abstract text available
    Text: STD100NH02L N-CHANNEL 20V - 0.0038 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0048 Ω 80 A(#) TYPICAL RDS(on) = 0.0038 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED


    Original     		STD100NH02L O-252) O-252 STD100NH02L PDF

    Untitled

    Abstract: No abstract text available
    Text: STD110NH02L N-CHANNEL 20V - 0.004 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.005 Ω 80 A(#) TYPICAL RDS(on) = 0.004 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED


    Original     		STD110NH02L O-252) O-252 STD110NH02L PDF

    Untitled

    Abstract: No abstract text available
    Text: STD110NH02L N-CHANNEL 20V - 0.004 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.005 Ω 80 A(#) TYPICAL RDS(on) = 0.004 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED


    Original     		STD110NH02L O-252) O-252 STD110NH02L PDF

    STV160NF02LA

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED


    Original     		STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA PDF

    STV160NF02L

    Abstract: tl 071
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET II POWER MOSFET TYPE STV160NF02L VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED


    Original     		STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L tl 071 PDF

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET II POWER MOSFET TYPE STV160NF02L • VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED


    Original     		STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L PDF

    STV160NF02LA

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA PDF

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L PDF

    STB160NF02L

    Abstract: No abstract text available
    Text: STB160NF02L N-CHANNEL 20V - 0.0018 Ω - 160A D2PAK STripFET POWER MOSFET TARGET DATA TYPE STB160NF02L • ■ ■ ■ ■ VDSS R DS on ID 20 V <0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE


    Original     		STB160NF02L O-263 STB160NF02L PDF

    STB160NF02L

    Abstract: No abstract text available
    Text: STB160NF02L N-CHANNEL 20V - 0.0018Ω - 160A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB160NF02L • ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE


    Original     		STB160NF02L STB160NF02L PDF

    Untitled

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA PDF

    STB160NF02L

    Abstract: No abstract text available
    Text: STB160NF02L N-CHANNEL 20V - 0.0018Ω - 160A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB160NF02L • ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE


    Original     		STB160NF02L STB160NF02L PDF

    STV160NF02L

    Abstract: motherboard schematic diagram
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L motherboard schematic diagram PDF

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L PDF

    STV160NF02LA

    Abstract: No abstract text available
    Text: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02LA PowerSO-10 PowerSO-10 STV160NF02LA PDF

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET II POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02L PowerSO-10 STV160NF02L STV160NF02LT4 PDF

    STV160NF02L

    Abstract: No abstract text available
    Text: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET II POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING


    Original     		STV160NF02L PowerSO-10 PowerSO-10 STV160NF02L PDF

    Untitled

    Abstract: No abstract text available
    Text: IRSM005-800MH Half-Bridge IPM for Low Voltage Applications 80A, 40V Description The IRSM005-800MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where


    Original     		IRSM005-800MH IRSM005-800MH AN-1178. AN-1091. AN-1028. AN-1133. PDF

    Untitled

    Abstract: No abstract text available
    Text: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids


    Original     		FDA8440 345nC 155oC) PDF

    Untitled

    Abstract: No abstract text available
    Text: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids


    Original     		FDA8440 345nC 145oC) PDF