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    MOSFET 2N6659 Search Results

    MOSFET 2N6659 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2N6659 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET 2n6659

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated 1 VDS VGS ID ID IDM1 PD Drain – Source Voltage Gate – Source Voltage Drain Current Drain Current


    Original     		2N6659X O-205AD) MOSFET 2n6659 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified


    Original     		2N6659, 2N6659-2 O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    2N6659-E3

    Abstract: 2N6659-2
    Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified


    Original     		2N6659, 2N6659-2 O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2N6659-E3 2N6659-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified


    Original     		2N6659, 2N6659-2 O-205AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    2N6659

    Abstract: 2N6660 VQ1004J VQ1004P
    Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660


    Original     		2N6659/2N6660, VQ1004J/P 2N6659 2N6660 O-205AD) P-37994--Rev. 08-Aug-94 2N6659 2N6660 VQ1004J VQ1004P PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660


    Original     		2N6659/2N6660, VQ1004J/P 2N6659 2N6660 O-205AD) P-37994--Rev. 08-Aug-94 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    JANTX markings on diode

    Abstract: 2N6659 70223
    Text: 2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) VGS(th) (V) ID (A) 60 3 at VGS = 10 V 0.8 to 2 0.99 TO-205AD (TO-39) BENEFITS • Guaranteed Reliability • Low Offset Voltage


    Original     		2N6660JAN/JANTX/JANTXV O-205AD 18-Jul-08 JANTX markings on diode 2N6659 70223 PDF

    2N6660 JANTX

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


    Original     		2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


    Original     		2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 PDF

    S0211

    Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72


    Original     		2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 3N175 MPF6659 motorola *6659 2SK73 PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252 PDF

    VN45350T

    Abstract: VN0603T 2N7001 VN45350 vn4012B
    Text: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5


    Original     		14-PIN VQ1001J VQ1001P VQ1004P VQ1004J VQ1000J VQ1000P VQ1006P VQ1006J OT-23 VN45350T VN0603T 2N7001 VN45350 vn4012B PDF

    MOSFET 2n6659

    Abstract: 2N6660 SILICONIX
    Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS 2N6659 Min (V) 2N 6660 60 VQiOOU/P Max (Q) V GS(th) (V ) Id (A) 1.8 @ V Gs = 10 V 0.8 to 2 1.4 3 @ V GS= 10 V 0.8 to 2 1.1 3.5 @ V GS= 10 V 0.8 to 2.5


    OCR Scan     		2N6659/2N6660, VQ1004J/P 2N6659 P-37994-- 08-Aug-94 MOSFET 2n6659 2N6660 SILICONIX PDF

    IVN5000TND

    Abstract: vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG
    Text: orciim ^ FEATURES IVN5000/1 TN Seri»* n-Channel Enhancementonode Vertical Power MOSFET These devices are non-zener improved equivalents of the follow ing series. • High speed, high current switching • High gain-bandwldth product • Inherently temperature stable


    OCR Scan     		IVN5000/1 IVN5000TND, IVN5001TND. IVN5000TNE, IVN5001TNE. IVN5000TNF, IVN5001TNF IVN5000TNG, IVN5001TNG IVN5000TND vn30ab 1VN5001 vn66ak VN35AK IVN5000TNE IVN5000 VN99AK IVN5000TNF IVN5000TNG PDF

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50 PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 PDF

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


    OCR Scan     		O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF