9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

SOT-23 MOSFET P-CHANNEL a1 1- mark

Abstract: L21e
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N30 Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N30Z Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

10N30

Abstract: 738A power mosfet 200A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

10N30

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N30Z Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-251 The UTC UF3N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior

4422 mosfet

Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Contextual Info: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.

Contextual Info: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides

AN799 Matching MOSFET Drivers to MOSFETs

Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
Contextual Info: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of

Contextual Info: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

FDD4N60NZ

Contextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

Contextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest

Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

TESTO10

Contextual Info: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDA59N30

Contextual Info: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8  Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and