MOSFET 300V Search Results
MOSFET 300V Result Highlights (5)
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 300V Datasheets Context Search
Catalog Datasheet |
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS | |
SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: L21e
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LP1030D LP1030D DSFP-LP1030D NR011613 SOT-23 MOSFET P-CHANNEL a1 1- mark L21e | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N30 Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching |
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4N30L-TN3-R 4N30G-TN3-R 4N30L-TN3-T 4N30G-TN3-T O-252 QW-R502-850 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N30Z Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching |
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4N30Z 4N30Z 4N30ZL-TN3-R 4N30ZG-TN3-R 4N30ZL-TN3-T 4N30ZG-TN3-T O-252 QW-R502-849 | |
10N30
Abstract: 738A power mosfet 200A
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10N30 10N30 O-220 QW-R502-738 738A power mosfet 200A | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a |
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12N30 12N30 QW-R502-787 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching |
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UF2N30Z UF2N30Z UF2N30ZL-AA3-R UF2N30ZG-AA3-R OT-223 QW-R502-761 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching |
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UF2N30Z UF2N30Z UF2N30ZG-AA3-R OT-223 UF2N30ZL-TN3-T UF2N30ZG-TN3-T O-251 UF2N30ZL-TNS-T UF2N30ZG-TNS-T O-251S | |
10N30Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a |
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10N30 10N30 QW-R502-738 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching |
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UF2N30Z UF2N30Z OT-223 UF2N30ZL-AA3-R UF2N30ZG-AA3-R QW-R502-761 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching |
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UF2N30 UF2N30 UF2N30L-AA3-R UF2N30G-AA3-R OT-223 QW-R502-761 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3N30Z Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-251 The UTC UF3N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior |
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UF3N30Z O-251 UF3N30Z O-252 UF3N30ZL-TM3-R UF3N30ZG-TM3-R UF3N30ZL-TN3-T UF3N30ZG-TN3-T UF3N30ZL-TN3-R UF3N30ZG-TN3-R | |
4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
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AN-30 TC4424 4422 mosfet MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501 | |
Contextual Info: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides |
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FDPF17N60NT | |
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AN799 Matching MOSFET Drivers to MOSFETs
Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
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AN799 TC4424 D-81739 DS00799A* DS00799A-page AN799 Matching MOSFET Drivers to MOSFETs an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424 | |
Contextual Info: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest |
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FDD5N60NZ | |
Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest |
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FDPF4N60NZ | |
FDD4N60NZContextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the |
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FDD4N60NZ FDD4N60NZ | |
Contextual Info: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest |
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FDD4N60NZ | |
Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the |
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FDPF4N60NZ FDPF4N60NZ | |
TESTO10Contextual Info: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDPF14N30 FDPF14N30 TESTO10 | |
Contextual Info: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDB14N30 | |
FDA59N30Contextual Info: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDA59N30 FDA59N30 | |
Contextual Info: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8 Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and |
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FDPF10N60ZUT FDPF10N60ZUT 50nsec |