IRHF53Z30
Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Text: PD - 93793A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)
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3793A
IRHF57Z30
IRHF53Z30
IRHF54Z30
IRHF58Z30
1000K
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF53Z30
IRHF54Z30
IRHF57Z30
IRHF58Z30
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IRHF53Z30
Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Text: PD - 93793B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)
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93793B
IRHF57Z30
IRHF53Z30
IRHF54Z30
IRHF58Z30
1000K
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF53Z30
IRHF54Z30
IRHF57Z30
IRHF58Z30
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APM3055L
Abstract: 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223
Text: APM3055L N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages
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APM3055L
0V/12A,
O-252
OT-223
O-252
OT-223
3055L
APM3055L
3055L
APM3055L voltage
APM3055L equivalent
APM3055L datasheet
J-STD-020A
marking 3055l
f 3055l
A6 sot223
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mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A
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MOS200702
H3055MJ
H3055MJ
O-252
V-10V)
10sec
mosfet y1
MOSFET MARK y2
mosfet k 61 y1
y2 marking
TL 434
mosfet sn60
ultra low idss
H-3055
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Untitled
Abstract: No abstract text available
Text: APM3054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3054NU
0V/12A,
O-252
3054N
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3055L
Abstract: f 3055l
Text: APM3055LU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ(typ.) @ VGS=10V RDS(ON)=100mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3055LU
0V/12A,
O-252
3055L
3055L
f 3055l
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AP15T03J
Abstract: C1864
Text: AP15T03H/J Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS 30V RDS ON 80mΩ ID ▼ Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP15T03H/J
O-252
AP15T03J)
O-251
100us
100ms
AP15T03J
C1864
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Untitled
Abstract: No abstract text available
Text: AP15T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement BVDSS 30V RDS ON 80m ID Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP15T03GH/J
O-252
AP15T03GJ)
O-251
100us
100ms
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RD-188
Abstract: AP15T03GJ
Text: AP15T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS 30V RDS ON 80mΩ ID ▼ Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP15T03GH/J
O-252
AP15T03GJ)
O-251
100us
100ms
RD-188
AP15T03GJ
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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Si4830
Abstract: Fast Switching mosfet SI3433B smd diode 615
Text: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6
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4110ppm
400ppm
Q-101
BZX384
OD323
Si4830
Fast Switching mosfet
SI3433B
smd diode 615
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Untitled
Abstract: No abstract text available
Text: AP25T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement BVDSS 30V RDS ON 35m ID Fast Switching Characteristic G 20A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP25T03GH/J
O-252
AP25T03GJ)
O-251
100us
100ms
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ap25t03gj
Abstract: No abstract text available
Text: AP25T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 35mΩ ID G 20A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP25T03GH/J
O-252
AP25T03GJ)
O-251
100us
100ms
ap25t03gj
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Untitled
Abstract: No abstract text available
Text: AP4416GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D RDS ON Simple Drive Requirement ID Fast Switching Characteristic G RoHS Compliant 35V 45m 20A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP4416GH/J
O-252
AP4416GJ)
O-251
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k 1058 mosfet
Abstract: No abstract text available
Text: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make
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IR3476
IR3476
PD97603
k 1058 mosfet
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irf Lot Codes
Abstract: No abstract text available
Text: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make
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IR3476
IR3476
PD97603
irf Lot Codes
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lot date code panasonic 0603 resistor
Abstract: Sanyo "date code" POSCAP Capacitor Sanyo "date code"
Text: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make
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IR3476
IR3476
PD97603
lot date code panasonic 0603 resistor
Sanyo "date code" POSCAP Capacitor
Sanyo "date code"
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k 1058 mosfet
Abstract: lot date code panasonic 0603 resistor IR3476 3476M Sanyo lot code Capacitor TP20 capacitor 330uF 25V GRM188F51H224ZA01D taiyo yuden date code PD97603
Text: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make
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IR3476
IR3476
PD97603
k 1058 mosfet
lot date code panasonic 0603 resistor
3476M
Sanyo lot code Capacitor
TP20
capacitor 330uF 25V
GRM188F51H224ZA01D
taiyo yuden date code
PD97603
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Sanyo lot code Capacitor
Abstract: lot date code panasonic 0603 resistor V18 marking
Text: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make
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IR3476
IR3476
PD97603
Sanyo lot code Capacitor
lot date code panasonic 0603 resistor
V18 marking
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Untitled
Abstract: No abstract text available
Text: AP9469GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D RDS ON Simple Drive Requirement ID Fast Switching Characteristic G RoHS Compliant 40V 50m 18A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP9469GH/J
O-252
AP9469GJ)
O-251
100ms
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panasonic capacitor date code
Abstract: 805 smd code capacitor 400KHZ ir347 lot date code panasonic 0603 resistor RK73H*1002f GRM188R71E105K PIMB103E-1R0MS
Text: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION • Input Voltage Range: 3V to 27V Output Voltage Range: 0.5V to 12V Continuous 12A Load Capability Constant On-Time Control Compensation Loop not Required Excellent Efficiency at Very Low Output Currents
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IR3476
IR3476
PD97603
panasonic capacitor date code
805 smd code capacitor
400KHZ
ir347
lot date code panasonic 0603 resistor
RK73H*1002f
GRM188R71E105K
PIMB103E-1R0MS
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25e-4
Abstract: HUF76407D3ST TB334 AN7254 AN7260 AN9321 AN9322 HUF76407D3 HUF76407D3S
Text: HUF76407D3, HUF76407D3S Data Sheet October 1999 File Number 4664.1 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76407D3S HUF76407D3
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HUF76407D3,
HUF76407D3S
O-251AA
O-252AA
HUF76407D3
25e-4
HUF76407D3ST
TB334
AN7254
AN7260
AN9321
AN9322
HUF76407D3
HUF76407D3S
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10lbxin
Abstract: classd audio amplifier
Text: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI
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IRFB4103PbF
O-220AB
O-220AB
10lbxin
classd audio amplifier
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ELM32405LA-S
Abstract: SS510
Text: Single P-channel MOSFET ELM 32405LA-S • General description B F e a tu re s ELM32405LA-S uses advanced trench technology to provide excellentRds on , low gate charge and low gate resistance. • Vds=-30V • Id=-12A • Rds(on) < 45mQ (Vgs=-10V) • Rds(on) < 75mQ (Vgs=-4.5V)
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ELM32405LA-S
ELM32405LA-S
SS510
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