Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 345 Search Results

    MOSFET 345 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC60747-8

    Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158 IEC60747-8 nxp mosfet soa derating AN10273 iec60134

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158

    Untitled

    Abstract: No abstract text available
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT502 AOT502

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 3 — 7 January 2013 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158

    AOT502

    Abstract: gate-drain zener 50E05 102-AX
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT502 AOT502 gate-drain zener 50E05 102-AX

    "MOSFET Module"

    Abstract: QJB0121002 MOSFET 50V 100A FS70UMJ-2 mosfet module
    Text: QJB0121002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Four MOSFET Module 210 Amperes/100 Volts Description: Powerex power MOSFET Module designed specially for customer applications. Each module consists of four Mosfet transistors in an H-Bridge configuration with each


    Original     		PDF QJB0121002 Amperes/100 FS70UMJ-2 QJB01210ce -100A/ "MOSFET Module" QJB0121002 MOSFET 50V 100A mosfet module

    IRF8734PBF

    Abstract: IRF8734TRPBF
    Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


    Original     		PDF IRF8734PbF 10formation: IRF8734PBF IRF8734TRPBF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET  DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed


    Original     		PDF UTT10N10 UTT10N10 UTT10N10L-TM3-T UTT10N10G-TM3-T UTT10N10L-TN3-T UTT10N10G-TN3-T UTT10N10L-TN3-R UTT10N10G-TNat QW-R502-714

    FQD13N10

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N10 FQU13N10 FQU13N10

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed


    Original     		PDF UTT10N10 UTT10N10 UTT10N10L-TN3-R UTT10N10G-TN3-R UTT10N10L-TN3-T UTT10N10G-TN3-T QW-R502-714

    Untitled

    Abstract: No abstract text available
    Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3


    Original     		PDF IRF8734PbF 10irf

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed


    Original     		PDF UTT10N10 UTT10N10 UTT10N10L-TM3-T UTT10N10G-TM3-T UTT10N10L-TN3-T UTT10N10G-TN3-T UTT10N10L-TN3-R UTT10N10G-TN3-R QW-R502-714

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N10 FQU13N10 FQU13N10

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD13N10

    BD6563FV-LB

    Abstract: No abstract text available
    Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB ●General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side


    Original     		PDF BD6563FV-LB BD6563FV-LB

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side


    Original     		PDF BD6563FV-LB BD6563FV-LB

    AN2386

    Abstract: Atlas silvaco 14047 silvaco
    Text: AN2386 Application note How to achieve the threshold voltage thermal coefficient of the MOSFET acting on design parameters Introduction Today, the MOSFET devices are used mainly as switches in electronic circuits. In such operational conditions, the MOSFET device works in switch on and switch off modes.


    Original     		PDF AN2386 AN2386 Atlas silvaco 14047 silvaco

    Untitled

    Abstract: No abstract text available
    Text: FDC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDC86244

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also


    Original     		PDF UTT120P06 UTT120P06 UTT120P06L-TA3-T UTT120P06G-TA3-T UTT120P06L-TQ2-T UTT120P06G-TQ2-T UTT120P06L-TQ2-R UTT120P06G-TQ2-R QW-R502-728

    p-channel Mosfet 110A

    Abstract: UTT120P06
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also


    Original     		PDF UTT120P06 UTT120P06 O-220 UTT120P06L-TA3-T UTT120P06G-TA3-T QW-R502-728 p-channel Mosfet 110A

    MO-240

    Abstract: No abstract text available
    Text: FDMC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDMC86244 MO-240

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT16P10 Power MOSFET 100V, 16A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT16P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


    Original     		PDF UTT16P10 UTT16P10 O-252 UTT16P10L-TN3-R UTT16P10G-TN3-R UTT16P10L-TN3-T UTT16P10G-TN3-T QW-R502-748

    Untitled

    Abstract: No abstract text available
    Text: FQP13N10 N-Channel QFET MOSFET 100 V, 12.8 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to


    Original     		PDF FQP13N10

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P06 Power MOSFET −60V, −27.5A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


    Original     		PDF UTT25P06 UTT25P06 UTT25P06L-TA3-T UTT25P06G-TA3-T UTT25P06L-TM3-T UTT25P06G-TM3at QW-R502-595