MOSFET IRF 3710
Abstract: IC 7486 F7101 EIA-541 IRF7101
Text: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4
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IRF7834PbF
EIA-481
EIA-541.
MOSFET IRF 3710
IC 7486
F7101
EIA-541
IRF7101
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Untitled
Abstract: No abstract text available
Text: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4
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IRF7834PbF
EIA-481
EIA-541.
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F7101
Abstract: IRF7834PBF EIA-541 IRF7101
Text: PD - 95292 IRF7834PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free HEXFET Power MOSFET VDSS : Qg typ. 30V 4.5m @VGS = 10V 1 8 S 2 7 S 3 6 4
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IRF7834PbF
EIA-481
EIA-541.
F7101
IRF7834PBF
EIA-541
IRF7101
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Untitled
Abstract: No abstract text available
Text: PD - 94761 IRF7834 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 30V 4.5m:@VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 4.5V VGS
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IRF7834
EIA-481
EIA-541.
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IC 7486
Abstract: MOSFET IRF 3710 7486 ci ic MARKING QG F7101 IRF7101 IRF7834
Text: PD - 94761 IRF7834 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 30V 4.5m:@VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 4.5V VGS
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IRF7834
EIA-481
EIA-541.
IC 7486
MOSFET IRF 3710
7486 ci
ic MARKING QG
F7101
IRF7101
IRF7834
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LT3701
Abstract: FZT690B B340A LT3710 LT3781 LTC1698 Si7892DP
Text: = !"#$%&' *+,-./0123456 ! 299 Charlie Zhao Wei Chen !"#$%&'()*+,-./0*123 !" LT3781 !"#$%&=M OSFET= !"#$%&'()*+,-./0123 !"# $%&'()*+,-./01 LT 3710 !"#$%&'( !)*+,-& !"LT3710 !"#$%&' ()* !"#$%&'()*+,-./0 =LTC1698= =3.3V= !"#$%&' =MOSFET= !"#$LT3701 =2.5V
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LT3781
LT3710
LTC1698=
LT3701
V/10A
Si7456DP
PA0191
LT3701
FZT690B
B340A
LT3710
LT3781
LTC1698
Si7892DP
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Untitled
Abstract: No abstract text available
Text: AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
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AOT22N50/AOTF22N50
AOT22N50
AOTF22N50
AOT22N50L
AOTF22N50L
O-220F
O-220
AOTF22N50
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Untitled
Abstract: No abstract text available
Text: AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
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AOT22N50/AOTF22N50
AOT22N50
AOTF22N50
AOT22N50L
AOTF22N50L
O-220F
O-220
AOTF22N50
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MO-240
Abstract: FDMS86103L 13 Mhz mosfet
Text: FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86103L
MO-240
FDMS86103L
13 Mhz mosfet
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Untitled
Abstract: No abstract text available
Text: FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86103L
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Untitled
Abstract: No abstract text available
Text: AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK22N50
AOK22N50
AOK22N50L
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK22N50
AOK22N50
AOK22N50L
O-247
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tc 3086
Abstract: No abstract text available
Text: AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOTF22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOTF22N50
AOTF22N50
AOTF22N50L
O-220F
tc 3086
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Untitled
Abstract: No abstract text available
Text: AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK22N50
AOK22N50
AOK22N50L
O-247
D2N50
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AP3710
Abstract: No abstract text available
Text: AP3710GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 23mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP3710GP
O-220
O-220
3710GP
AP3710
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STU16NB50
Abstract: No abstract text available
Text: STU16NB50 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STU16NB50
STU16NB50
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP3710GP-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Performance G BV DSS 100V RDS ON 23mΩ ID RoHS-compliant 57A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP3710GP-3
AP3710GP-3
O-220
O-220
AP3710
3710GP
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scr gate driver ic
Abstract: HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet
Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards
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U-137
1000pF
UC3724
UC3725
600kHz
O-220
scr gate driver ic
HEXFET Power MOSFET designer manual
"MOS Controlled Thyristors"
UC1710 application notes
mosfet discrete totem pole drive CIRCUIT
IRFP460 transistor databook
HEXFET Power MOSFET Designers Manual
irfp460 igbt
SCR gate drive circuit
datasheet irfp460 mosfet
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HEXFET Power MOSFET Designers Manual
Abstract: "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710
Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards
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U-137
HEXFET Power MOSFET Designers Manual
"MOS Controlled Thyristors"
HEXFET Power MOSFET designer manual
mosfet discrete totem pole drive CIRCUIT
UC1710 application notes
IRFP460 transistor databook
UC1770
mosfet discrete totem pole CIRCUIT
scr gate driver ic
uc1710
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STU16NB50
Abstract: No abstract text available
Text: STU16NB50 N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STU16NB50
A-Max220
STU16NB50
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2 switch forward converter
Abstract: 48v 10A regulator SI7456DP 1B MOSFET fzt690b B340A multiple output regulator power supply high efficiency rectifier 100v 1a poscap 470uf 2.5v D01813P-122HC
Text: advertisement Multiple Output Isolated Power Supply Achieves High Efficiency with Secondary Side Synchronous Post Regulator – Design Note 299 Charlie Zhao and Wei Chen synchronous rectification. The primary side controller uses the LT3781; a current mode 2-switch forward controller with built-in MOSFET drivers. On the secondary
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LT3781;
LTC1698,
LT3710
LTC1698
B2100
Si7456DP
PA0191
V/10A
MMSZ5241B
2 switch forward converter
48v 10A regulator
1B MOSFET
fzt690b
B340A
multiple output regulator power supply
high efficiency rectifier 100v 1a
poscap 470uf 2.5v
D01813P-122HC
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welding equipment smps schematic
Abstract: STU16NB50 DI 156 S
Text: STU16NB50 N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STU16NB50
A-Max220
welding equipment smps schematic
STU16NB50
DI 156 S
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Untitled
Abstract: No abstract text available
Text: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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OCR Scan
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STU16NB50
A-Max220
Max220
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sml4014bvr
Abstract: No abstract text available
Text: Illl Vrr r = mi SEM E SML4014BVR LAB 5TH GENERATION MOSFET TO -247AD Package Outline. Dim ensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4.69 (0 . 185) 1 5.31 (0 .2 09) 1.49 (0 .05 9 ) . 6 1 3.55 (0 . 140) 3.81 (0 . 150) VDSS
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SML4014BVR
-247AD
O-247
sml4014bvr
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