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    MOSFET 3A 250V Search Results

    MOSFET 3A 250V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    H5N2505DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    H5N2503P-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 50A 55Mohm To-3P Visit Renesas Electronics Corporation
    RJK2555DPA-00#J0 Renesas Electronics Corporation Nch Single Power Mosfet 250V 17A 104Mohm Wpak Visit Renesas Electronics Corporation

    MOSFET 3A 250V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSS430

    Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70


    Original     		PDF JANSR2N7402 FSS430R4 R2N74 FSS430 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112

    zener diode B5

    Abstract: STD3PS25 STD3PS25-1
    Text: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 • ■ ■ ■ ■ VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STD3PS25 STD3PS25-1 STD3PS25 zener diode B5 STD3PS25-1

    MOSFET P-CH 250V 5A

    Abstract: 4.7 B2 zener STD3PS25 STD3PS25-1
    Text: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION STANDARD OUTLINE FOR EASY


    Original     		PDF STD3PS25 STD3PS25-1 STD3PS25 MOSFET P-CH 250V 5A 4.7 B2 zener STD3PS25-1

    TO-251 footprint

    Abstract: Diode zener 3a STD3NM50 STD3NM50-1 IPAK
    Text: STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE STD3NM50 STD3NM50-1 VDSS @Tjmax RDS(on) ID 550V 550V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STD3NM50 STD3NM50-1 TO-251 footprint Diode zener 3a STD3NM50 STD3NM50-1 IPAK

    TO-251 footprint

    Abstract: STD3NM50 STD3NM50-1
    Text: STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS @Tjmax RDS(on) ID 550V 550V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD3NM50 STD3NM50-1 TO-251 footprint STD3NM50 STD3NM50-1

    Untitled

    Abstract: No abstract text available
    Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD3NM50 STD3NM50-1 O-252 O-251

    diode circuit diagram

    Abstract: No abstract text available
    Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES


    Original     		PDF STD3NM50 STD3NM50-1 O-252 O-251 diode circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge


    Original     		PDF UF3N25Z UF3N25Z O-252 OT-223 O-251 UF3N25ZL-AA3-R UF3N25ZG-AA3-R UF3N25ZL-TM3-T UF3N25ZG-TM3-T UF3N25ZL-TN3-R

    2E12

    Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7402 FSS430R4 2E12 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge


    Original     		PDF UF3N25 UF3N25 O-252 OT-223 O-251 UF3N25L-AA3-R UF3N25G-AA3-R UF3N25L-TM3-T UF3N25G-TM3-T UF3N25L-TN3-R

    STD3NM50

    Abstract: STD3NM50-1
    Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STD3NM50 STD3NM50-1 STD3NM50 STD3NM50-1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge


    Original     		PDF UF3N25Z OT-223 UF3N25Z O-252 O-251 UF3N25ZL-AA3-R UF3N25ZG-AA3-R UF3N25ZL-TM3-T UF3N25ZG-TM3-T

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7402 FSS430R4

    2E12

    Abstract: 3E12 FRS430D FRS430H FRS430R 794V
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 2E12 3E12 FRS430D FRS430H FRS430R 794V

    2E12

    Abstract: 3E12 FRS430D FRS430H FRS430R Rad Hard in Fairchild for MOSFET
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 2E12 3E12 FRS430D FRS430H FRS430R Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF O-220F O-252 QW-R502-530

    AOT3N50

    Abstract: AOTF3N50
    Text: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Features The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT3N50/AOTF3N50 AOT3N50 AOTF3N50 O-220 O-220F AOTF3N50 AOT3N50

    747 diode

    Abstract: 3N50Z
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 3N50Z 3N50Z O-220F QW-R502-747 747 diode

    3N50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 „ TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF O-220F O-252 QW-R502-530 3N50

    AOT3N50

    Abstract: AOTF3N50
    Text: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT3N50/AOTF3N50 AOT3N50 AOTF3N50 O-220 O-220F AOT3N50

    Untitled

    Abstract: No abstract text available
    Text: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOD3N50/AOU3N50 AOD3N50 AOU3N50

    VIVA

    Abstract: No abstract text available
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 -257AA VIVA

    Untitled

    Abstract: No abstract text available
    Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRM430D, FRM430R, FRM430H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD desi45 O-204AA