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    MOSFET 400 V 10A Search Results

    MOSFET 400 V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 400 V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling 11 • Simple drive requirements


    Original     		PDF IRF720, SiHF720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF720, SiHF720 O-220 O-220 12-Mar-07

    IRF720P

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF720P

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF720 vishay

    Abstract: IRF720 SiHF720 SiHF720-E3
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF720, SiHF720 O-220 O-220 18-Jul-08 IRF720 vishay IRF720 SiHF720-E3

    inductor 1 mH

    Abstract: No abstract text available
    Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)


    Original     		PDF IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320/SiHFR320) IRFU320/SiHFU320) O-252) O-251) 12-Mar-07 inductor 1 mH

    Untitled

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion


    Original     		PDF IRFD310, SiHFD310 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 1.8 20 Qgs (nC) 3.3 • End stackable Qgd (nC) 11 • Fast switching Configuration


    Original     		PDF IRFD320, SiHFD320 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 400 RDS(on) () VGS = - 10 V 7.0 Qg (Max.) (nC) 13 Qgs (nC) 3.2 Qgd (nC) 5.0 Configuration Single S DPAK


    Original     		PDF IRFR9310, IRFU9310, SiHFR9310 SiHFU9310 O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 12-Mar-07 flyback xfmr 3.5 mh

    irfu310

    Abstract: IRFR310 SiHFR310 SiHFR310-E3 SiHFU310 vishay siliconix 99 ipak
    Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310/SiHFR310) Qgs (nC) 1.9


    Original     		PDF IRFR310, IRFU310, SiHFR310 SiHFU310 IRFR310/SiHFR310) IRFU310/SiHFU310) O-252) O-251) 18-Jul-08 irfu310 IRFR310 SiHFR310-E3 vishay siliconix 99 ipak

    Untitled

    Abstract: No abstract text available
    Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310, SiHFR310) Qgs (nC)


    Original     		PDF IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251)

    Untitled

    Abstract: No abstract text available
    Text: IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 400 RDS(on) () VGS = - 10 V 7.0 Qg (Max.) (nC) 13 Qgs (nC) 3.2 Qgd (nC) 5.0 Configuration Single S DPAK


    Original     		PDF IRFR9310, IRFU9310, SiHFR9310 SiHFU9310 O-252) 2002/95/EC.

    IRF720

    Abstract: SiHF720 SiHF720-E3 IRF720 vishay
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 11-Mar-11 IRF720 SiHF720-E3 IRF720 vishay

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF720, SiHF720 2002/95/EC O-220AB 11-Mar-11

    IRF730A

    Abstract: IRF730AL IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 flyback xfmr 3.5 mh
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-263) O-262) 18-Jul-08 IRF730A IRF730AL IRF730AS SiHF730AS-E3 flyback xfmr 3.5 mh

    IRF730AL

    Abstract: IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		PDF IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 18-Jul-08 IRF730AL IRF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh

    IRFU320PBF

    Abstract: irfr320 IRFU320 SiHFR320 SiHFR320-E3 SiHFU320
    Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)


    Original     		PDF IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320/SiHFR320) IRFU320/SiHFU320) O-252) O-251) 18-Jul-08 IRFU320PBF irfr320 IRFU320 SiHFR320-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion


    Original     		PDF IRFD310, SiHFD310 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion


    Original     		PDF IRFD310, SiHFD310 2002/95/EC 18-Jul-08