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    MOSFET 400V 16A Search Results

    MOSFET 400V 16A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 400V 16A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFP350

    Abstract: TB334
    Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRFP350 O-247 IRFP350 TB334 PDF

    IRFP350

    Abstract: TB334
    Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP350 TA17434. IRFP350 TB334 PDF

    3n40

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD3N40 FDU3N40 FDU3N40 FDD3N40TF FDD3N40TM 3n40 PDF

    IRF360

    Abstract: No abstract text available
    Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRF360 O-204AA/AE) IRF360 PDF

    IRF360

    Abstract: IRF3601 mosfet irf360
    Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		IRF360 O-204AA/AE) IRF360 IRF3601 mosfet irf360 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP350 Data Sheet Title FP3 bt A, 0V, 00 m, 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP350 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


    Original     		IRFP350LC 08-Mar-07 PDF

    IRF350LC

    Abstract: IRFP350LC IRFPE30
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


    Original     		IRFP350LC 12-Mar-07 IRF350LC IRFP350LC IRFPE30 PDF

    IRF350LC

    Abstract: IRFP350LC IRFPE30
    Text: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω


    Original     		IRFP350LC IRFPE30 IRF350LC IRFP350LC IRFPE30 PDF

    diode marking dmx

    Abstract: forward smps 12v
    Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits


    Original     		94084B IRFB17N50L O-220AB diode marking dmx forward smps 12v PDF

    250A

    Abstract: 035H IRFPE30
    Text: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications


    Original     		IRFP17N50LPbF 170ns O-247AC IRFPE30 250A 035H IRFPE30 PDF

    IRF 640 mosfet

    Abstract: IRFP17N50L
    Text: APPROVED IRFP17N50L SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω 16A 500V Benefits


    Original     		IRFP17N50L O-247AC IRF 640 mosfet IRFP17N50L PDF

    Untitled

    Abstract: No abstract text available
    Text: SSFP17N50 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 500V Simple Drive Requirement ID25 = 16A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		SSFP17N50 00A/s ISD16A di/dt347A/S width300S; PDF

    IRFB17N50L

    Abstract: No abstract text available
    Text: PD - 94084A IRFB17N50L SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω 16A 500V Benefits


    Original     		4084A IRFB17N50L O-220AB O-220AB IRFB17N50L PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits


    Original     		94084B IRFB17N50L O-220AB 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications


    Original     		IRFP17N50LPbF 170ns O-247AC 08-Mar-07 PDF

    035H

    Abstract: IRFPE30
    Text: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications


    Original     		IRFP17N50LPbF 170ns O-247AC 12-Mar-07 035H IRFPE30 PDF

    FDP16N50

    Abstract: FDPF16N50
    Text: UniFET TM FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP16N50 FDPF16N50 FDPF16N50 PDF

    FDPF16N50

    Abstract: FDP16N50
    Text: UniFET TM FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP16N50 FDPF16N50 FDPF16N50 PDF

    FDPF16N50

    Abstract: FDP16N50
    Text: TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP16N50 FDPF16N50 FDPF16N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP350 S e m iconductor July 1999 Data Sheet 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET • 16A ,400V Ordering Information IRFP350 TO-247 • r DS ON = 0.300i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		IRFP350 O-247 300i2 TB334 TA17434. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD310 Semiconductor D ata S h eet Ju ly 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 0.4A, 400V • r DS ON = 3 .6 0 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		IRFD310 TB334 TA17444. PDF

    IRFP350

    Abstract: No abstract text available
    Text: PD-9.445C International Ik?r1Rectifier IRFP350 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n -


    OCR Scan     		IRFP350 O-247 T0-220 O-218 IT13tà IRFP350 PDF

    IRFP350

    Abstract: No abstract text available
    Text: PD-9.445C International S Rectifier IRFP350 HEXFET Power MOSFET • • • • • • Dynamic dv/di Rating Repetitive Avalanche Rated Isolated Centra! Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^ D S o n = 0 - 3 0 Q


    OCR Scan     		IRFP350 0-30O O-247 O-220 O-218 PDF